Bifurcation Instability of sheet metal during spring-back

In automotive and home appliance industries, there are many complex-shaped sheet metal components which need to be fabricated in multiple stamping operations. For example, the manufacturing of an outer case of washing machine consists of stamping followed by a bending operation. After the first stage of the stamping process, a large amount of spring-back takes place, and therefore, it is difficult to proceed to the next stage of the bending process. In the stamping process of that kind of sheet component with low geometric constraint, the forming area is large compared to the forming depth. Therefore, the formed part is in an unstable state and is less geometrically constrained, which causes a large amount of spring-back. To investigate this phenomenon, finite element analyses are carried out. During a spring-back analysis after forming, bifurcation takes place and the finite element solution procedure using the Newton–Raphson scheme becomes unstable. To get a stable post-bifurcation solution, a bifurcation algorithm is introduced at the bifurcation point. The deformed shapes obtained from finite element analyses are in good agreement with the experimental data. From this study, it is shown that the bifurcation behaviour enlarges the spring-back and the degree of dimensional error. To obtain additional possible post-bifurcation solutions, non-bifurcation analyses using initial guesses obtained in a modal analysis are carried. For the initial guesses, lowed four eigenmodes are utilized. Finally, the post-bifurcation behaviour and spring-back amount are investigated for various process parameters including the forming depth, punch width and corner radius.     

有分压电阻和e偏振非相干背景光辐照的光折变晶体中非相干耦合空间孤子对

为了得到光折变晶体中非相干耦合空间孤子对统一理论的结果,基于单光子光折变空间光孤子的基本理论模型,建立了稳态条件下有分压电阻和e偏振非相干均匀背景光辐照的单光子光伏光折变晶体中非相干耦合空间孤子对理论. 研究表明:这种孤子对是由两束偏振方向和波长都相同的互不相干光束耦合形成的, 孤子对两光束都能在晶体中稳定传播;当分压电阻、e偏振背景光、外加电场和光伏场取不同值时, 可获得14种光折变非相干耦合空间孤子对. 本文的结果对完善和充实光折变空间孤子理论体系有重要意义.     

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

The distribution profile of Al implanted in crystalline Ge has been investigated by micro‐Raman spectroscopy. Using different excitation laser lines, corresponding to different optical penetration depths, the Al concentration at different depths beneath the sample surface has been studied. We have found a strong correlation between the intensity of the Al–Ge Raman peak at ~370 cm⁻¹, which is due to the local vibrational mode of substitutional Al atoms, and the carrier concentration profile, obtained by the spreading resistance profiling analysis. A similar connection has been also observed for both shape and position of the Ge–Ge Raman peak at ~300 cm⁻¹. According to these experimental findings, we propose here a fast and nondestructive method, based on micro‐Raman spectroscopy under different excitation wavelengths, to estimate the carrier concentration profiles in Al‐implanted Ge. Copyright © 2013 John Wiley & Sons, Ltd.     

氯吡格雷抵抗机制的研究进展及临床处理策略

冠心病患者尽管接受了标准的氯吡格雷治疗,但仍有一部分患者对氯吡咯雷表现为低反应甚至无反应,称为氯吡格雷抵抗。导致这种抵抗现象的可能原因包括患者个体的基因多态性和药物之间的相互作用等。临床处理的主要对策有提高氯吡格雷的给药剂量和采用新型药物等。笔者就现有的临床研究证据对氯吡格雷抵抗的定义、发生机制及临床干预策略进行了综述。     

基于MOS-NDR负阻器件的D触发器设计

负阻器件由于在电流 电压特性曲线中表现出独特的负微分电阻特性,从而大大增加了单个器件所能实现的逻辑功能.如果将其用于数字逻辑电路设计,尤其是触发器的设计,可有效减少器件的数目.通过分析CMOS工艺负阻器件MOS-NDR及单双稳态转换逻辑单元MOBILE的工作特性,设计了一个时钟上升沿触发的D触发器.采用TSMC 0.18 μm工艺对所设计的电路进行HSPICE仿真,仿真结果表明所设计的电路具有正确的逻辑功能.与基于MOS-NDR负阻器件的同类触发器相比,新设计的D触发器具有更稳健的输出和较强的抗干扰能力     

用电阻箱自组电桥的桥臂电阻选择

本文分析了用电阻箱作桥臂电阻自组电桥的灵敏度及测量结果不确定度,给出桥臂电阻的选择原则。     

单片机在重力加速度测量中的应用

本文介绍用ＤＶＣＣ—５１—ＧＬ单片单板机在重力加速度测量中的基本原理与方法。     

电阻温度系数的微机测定系统

本文介绍一种电阻温度系数微机测定实验的系统。     

Kapitza phonon transmission from clean H-silicon(111) surfaces into liquid helium

We have studied the phonon transmission from ultraclean Si(111) surfaces into liquid helium by the phonon pulse technique. Reflection experiments and angular resolving transmission experiments were performed to measure the absolute value of the transmission coefficient and its dependence on the phonon emission angle into the solid. Clean samples etched conventionally in dilute HF show a significant anomalous transmission. An additional etch step in highly buffered HF (i.e., NH₄F) with a pH-value of 7.8 reduces the transmission coefficient drastically. Local inhomogeneities of the transmission coefficient caused by the deposition of water molecules on the surface could be visualized by the enhanced transmission. We found that the observed anomalous transmission is caused by mass defects.     

气密性碳涂覆光纤筛选强度与电阻关系研究

通过实验分析确立了把光纤电阻作为衡量气密性碳涂覆光纤通过２％应变筛选的过渡标准。要拉制２％应变筛选的碳涂覆光纤，其电阻值应小于３０ｋΩ／ｃｍ。