The rotational anisotropies in the ferromagnetism/antiferromagnetism 1/ antiferromagnetism 2 exchange bias structures

The rotational anisotropies in the exchange bias structures of ferromagnetism/antiferromagnetism 1/antiferromagnetism 2 are studied in this paper. Based on the model, in which the antiferromagnetism is treated with an Ising mean field theory and the rotational anisotropy is assumed to be related to the field created by the moment induced on the antiferromagnetic layer next to the ferromagnetic layer, we can explain why in experiments for ferromagnetism (FM)/antiferromagntism 1 (AFM1)/antiferromagnetism 2 (AFM2) systems the thickness-dependent rotational anisotropy value is non-monotonic, i.e. it reaches a minimum for this system at a specific thickness of the first antiferromagnetic layer and exhibits oscillatory behaviour. In addition, we find that the temperature-dependent rotational anisotropy value is in good agreement with the experimental result.     

利用发射光谱进行常压介质阻挡放电等离子体诊断及其在材料表面改性上的应用(英文)

使用介质阻挡放电光谱诊断装置,对常压介质阻挡放电在材料改性过程中的等离子体发射光谱进行测量,记录和比较了空气、氦气和氩气常压介质阻挡放电等离子体发射光谱,并运用氩元素谱线的相对强度来诊断电子温度等物理参量,以达到对材料表面改性过程的实时监控。工作的结果对常压介质阻挡放电及其在材料改性上的应用具有重要的意义     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.     

Effects of Refractive Index and Viscosity on Fluorescence and Anisotropy Decays of Enhanced Cyan and Yellow Fluorescent Proteins

The fluorescence lifetime strongly depends on the immediate environment of the fluorophore. Time-resolved fluorescence measurements of the enhanced forms of ECFP and EYFP in water–glycerol mixtures were performed to quantify the effects of the refractive index and viscosity on the fluorescence lifetimes of these proteins. The experimental data show for ECFP and EYFP two fluorescence lifetime components: one short lifetime of about 1 ns and a longer lifetime of about 3.7 ns of ECFP and for EYFP 3.4. The fluorescence of ECFP is very heterogeneous, which can be explained by the presence of two populations: a conformation (67% present) where the fluorophore is less quenched than in the other conformation (33% present). The fluorescence decay of EYFP is much more homogeneous and the amplitude of the short fluorescence lifetime is about 5%. The fluorescence anisotropy decays show that the rotational correlation time of both proteins scales with increasing viscosity of the solvent similarly as shown earlier for GFP. The rotational correlation times are identical for ECFP and EYFP, which can be expected since both proteins have the same shape and size. The only difference observed is the slightly lower initial anisotropy for ECFP as compared to the one of EYFP.     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值，文章介绍了最近在Fe（001）／MgO／Fe／MgO／Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作，通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析，证实了最近Nozaki等人（Nozaki T et al．Phys．Rev．Lett．，2006，96：027208）实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Г点处形成的△1对称性的量子阱态．Coulomb阻塞效应的存在正是导致实验中低温下量子阱共振隧穿效应不够明显的主要原因．     

Sulphide passivation of GaN based Schottky diodes

Wet chemical passivation of n-GaN surface was carried out by dipping GaN samples in ammonium sulphide diluted in aqueous and alcoholic solvent base solutions. Photoluminescence (PL) investigations indicated that sulphide solution effectively led to the reduction of GaN surface states. Increased band edge PL peak showed that S²⁻ ions are more active in alcohol based solvents. X-ray photoelectron spectroscopy revealed reduction in surface oxides by introduction of sulphide species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated surfaces. Remarkable improvement in the Schottky barrier height (0.98 eV for passivated diodes as compared to 0.75 eV for untreated diodes) has been observed.     

Electronic transmission and dwell time on a double barrier system with an accelerating quantum well

Resonant tunneling quantum structures consist of asymmetric wells and barriers have been investigated to find their optimized geometrical parameters and potential profile by the numerical calculations. The results show that the widths and the depths of the asymmetric wells have a significant effect on the transmission coefficient and the dwell time. The properties exhibited in this work may establish guidance to the device applications.     

A review of commonly used analytical and empirical formulae for predicting sound diffracted by a thin screen

This paper reviews some useful analytical and empirical formulae that are used for the calculation of sound diffracted by a barrier. A brief historic overview of the study of spherical waves diffracted by a rigid half plane is presented also. The physical principles of sound diffraction by a thin plane are explained. The mathematical expressions are cast in a convenient form for ease of numerical implementation. Accurate analytical solutions are expressed in terms of standard mathematical functions that can be computed readily. Among the approximate solutions quoted, quite a few empirical formulations are adequate for most engineering purposes. The information presented in this paper should also be helpful for those who are interested in the study of sound diffracted by a barrier in a room or in a long industrial space.     

Determination of the in-plane anisotropy field in hexagonal systems via rotational magnetization: Theoretical model and Monte Carlo simulations

The magnetic anisotropy field in thin films with in-plane uniaxial anisotropy can be deduced from the VSM magnetization curves measured in magnetic fields of constant magnitudes. This offers a new possibility of applying rotational magnetization curves to determine the first- and second-order anisotropy constant in these films. In this paper we report a theoretical derivation of rotational magnetization curve in hexagonal crystal system with easy-plane anisotropy based on the principle of the minimum total energy. This model is applied to calculate and analyze the rotational magnetization process for magnetic spherical particles with hexagonal easy-plane anisotropy when rotating the external magnetic field in the basal plane. The theoretical calculations are consistent with Monte Carlo simulation results. It is found that to well reproduce experimental curves, the effect of coercive force on the magnetization reversal process should be fully considered when the intensity of the external field is much weaker than that of the anisotropy field. Our research proves that the rotational magnetization curve from VSM measurement provides an effective access to analyze the in-plane anisotropy constant K ₃ in hexagonal compounds, and the suitable experimental condition to measure K ₃ is met when the ratio of the magnitude of the external field to that of the anisotropy field is around 0.2. Supported by the National Natural Science Foundation of China (Grant Nos. 90505007 and 10774061) Recommended by LI FaShen