Development of a “Built-in” Scanning Near Field Microscope Head for an Atomic Force Microscope System and Stress Mapping of an Al2O3/ZrO2 Eutectic Composite

We constructed a scanning near-field optical microscope (SNOM) on a commercially available atomic force microscopy (AFM) apparatus (SPM-9500J2; Shimadzu Corp.) to measure the stress distribution in ceramic composite materials. Features of our SNOM system are: (1) a compact SNOM head substituted for the original AFM head; (2) a wide scanning range (125 × 125 μm²) inherited from the original scanner; (3) use of conventional shear-force regulation; (4) an optical system for the illumination-collection (I-C) mode; (5) excitation by a 488 nm line of an Ar-ion laser, and (6) light detection by photon counting or a polychromator equipped with an electronically cooled charge coupled device (CCD). This SNOM system was used to measure the surface structure and stress distribution of an Al₂O₃/ZrO₂ eutectic composite. We simultaneously measured topographic images and fluorescence spectra of an Al₂O₃/ZrO₂ eutectic composite. We estimated its peak intensity, peak position, and peak width from the fluorescence spectrum during scanning, which respectively correspond to the abundance of Al₂O₃, stress in the grain, and the anisotropy of that stress. Mapping images showed that the stress and its anisotropy were weaker in the center of the Al₂O₃ grain than its boundary between Al₂O₃ and ZrO₂. That observation suggests that Al₂O₃ underwent intense anisotropic stress induced by volume expansion in the phase transition of ZrO₂ from the cubic phase to the monoclinic phase during preparation.     

Influence of the Interaction between Two Neighboring Periodically Curved Fibers on the Stress Distribution in a Composite Material

A method is developed for a stress analysis in an infinite elastic body containing two neighboring periodically cophasaly curved fibers located along two parallel lines. The stress distribution is studied when the body is loaded at infinity by uniformly distributed normal forces in the fiber direction. The investigation is carried out within the framework of a piecewise homogeneous body model with the use of exact three-dimensional equations of elasticity theory. Numerical results related to the stress distribution considered and the influence of interaction between the fibers on this distribution are given.     

复合多层介质在可变温度和集中荷载作用下的位移和应力

研究了多层介质中的热弹性位移和应力.多层介质具有不同厚度,各层又具有不同的弹性性质,最上层表面上作用热荷载和集中荷载.假设各层分别是均匀、各向同性弹性材料,各层相关的位移分量是轴对称的,对称轴为各层表面的垂线.因此,各层应力函数满足无体力的单一方程.利用积分变换法求解了该方程,对由任意多个层数构造的多层介质,给出了其相应层数基础热弹性位移和应力的解析表达式.并对3层介质和4层介质时的数值结果进行了比较.     

利用微悬臂梁表面应力研究聚N-异丙基丙烯酰胺分子的构象转变

提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面，用光杠杆技术检测温度在20—40℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示：在升温过程中，微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形，这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中，微悬臂梁发生了反方向的弯曲变形，这对应着PNIPA 关键词： 构象转变 聚N-异丙基丙烯酰胺分子链 表面应力 微悬臂梁     

The Casimir effect of Reissner-NordstrSm black hole

The stress tensor of a massless scalar field satisfying a mixed boundary condition in a （1 ＋ 1）-dimensional Reissner- Nordstrom black hole background is calculated by using Wald＇s axiom. We find that Dirichlet stress tensor and Neumann stress tensor can be deduced by changing the coefficients of the stress tensor calculated under a mixed boundary condition. The stress tensors satisfying Dirichlet and Neumann boundary conditions are discussed. In addition, we also find that the stress tensor in conformal flat spacetime background differs from that in flat spacetime only by a constant.     

用干涉方法测量薄膜应力

基于基片弯曲法和牛顿环的基本原理,使用He-Ne激光器、扩束镜、凸透镜和带分光镜的移测显微镜,搭建了薄膜应力测量装置.采用直流溅射法制备了厚度为30~144 nm的银薄膜,衬底采用厚度为0.15 mm、直径为18 mm的圆形玻璃片.实验发现,薄膜厚度对银薄膜的内应力有显著的影响,在薄膜厚度很小时,随着薄膜厚度的增加,应力迅速增大,达到最大值后,随着厚度的继续增加,薄膜应力下降较快并趋于稳定值.     

Assessment of thermal expansion coefficient of methylsilsesquioxane thin film

For the methylsilsesquioxane film whose optical birefringence is almost zero, it was recently reported that its vertical thermal expansion coefficient (CTE) was approximately one order of magnitude larger than the lateral CTE. Though the birefringence is not an absolute predictor of anisotropic behavior, the discrepancy in both the CTEs was so remarkable that it was essential to investigate whether the anisotropy was intrinsic property or not. If the effect of Poisson's ratio is considered in the calculation of the vertical CTE and when elastic modulus measured by surface acoustic wave spectroscopy is used in the assessment of the lateral CTE, both the CTEs are coincident with each other. Therefore, it can be concluded that the discrepancy in the CTEs can be attributed to a higher in‐plane polymer chain orientation but it can also arise from the misleadingly assumed modulus and Poisson's ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3109–3120, 2006     

Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

各向异性材料中共线刚性线夹杂的纵向剪切问题

本文研究各向异性材料中共线刚性线夹杂，（有时称作“硬裂纹”或“反裂纹”问题）的纵向剪切问题。利用复变函数方法，提出了一般问题的公式和某些实际重要问题的封闭形式解，考察了刚性线端点附近的应力分布．从本文解答的特殊情形，可以直接导出各向同性材料相应问题的公式和结果，包括某些已有的结果￣［７］．