Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Autoionization of an ultracold Rydberg gas through resonant dipole coupling

We investigate a possible mechanism for the autoionization of ultracold Rydberg gases, based on the resonant coupling of Rydberg pair states to the ionization continuum. Unlike an atomic collision where the wave functions begin to overlap, the mechanism considered here involves only the long-range dipole interaction and is in principle possible in a static system. It is related to the process of intermolecular Coulombic decay (ICD). In addition, we include the interaction-induced motion of the atoms and the effect of multi-particle systems in this work. We find that the probability for this ionization mechanism can be increased in many-particle systems featuring attractive or repulsive van der Waals interactions. However, the rates for ionization through resonant dipole coupling are very low. It is thus unlikely that this process contributes to the autoionization of Rydberg gases in the form presented here, but it may still act as a trigger for secondary ionization processes. As our picture involves only binary interactions, it remains to be investigated if collective effects of an ensemble of atoms can significantly influence the ionization probability. Nevertheless our calculations may serve as a starting point for the investigation of more complex systems, such as the coupling of many pair states proposed in [P.J. Tanner et al., Phys. Rev. Lett. 100, 043002 (2008)].     

Comparative atomistic and coarse-grained study of water: What do we lose by coarse-graining?

We employ the inverse Boltzmann method to coarse-grain three commonly used three-site water models (TIP3P, SPC and SPC/E) where one molecule is replaced with one coarse-grained particle with isotropic two-body interactions only. The shape of the coarse-grained potentials is dominated by the ratio of two lengths, which can be rationalized by the geometric constraints of the water clusters. It is shown that for simple two-body potentials either the radial distribution function or the geometrical packing can be optimized. In a similar way, as needed for multiscale methods, either the pressure or the compressibility can be fitted to the all atom liquid. In total, a speed-up by a factor of about 50 in computational time can be reached by this coarse-graining procedure.     

Physisorption kinetics of electrons at plasma boundaries

Plasma-boundaries floating in an ionized gas are usually negatively charged. They accumulate electrons more efficiently than ions leading to the formation of a quasi-stationary electron film at the boundaries. We propose to interpret the build-up of surface charges at inert plasma boundaries, where other surface modifications, for instance, implantation of particles and reconstruction or destruction of the surface due to impact of high energy particles can be neglected, as a physisorption process in front of the wall. The electron sticking coefficient s_e and the electron desorption time τ_e, which play an important role in determining the quasi-stationary surface charge, and about which little is empirically and theoretically known, can then be calculated from microscopic models for the electron-wall interaction. Irrespective of the sophistication of the models, the static part of the electron-wall interaction determines the binding energy of the electron, whereas inelastic processes at the wall determine s_e and τ_e. As an illustration, we calculate s_e and τ_e for a metal, using the simplest model in which the static part of the electron-metal interaction is approximated by the classical image potential. Assuming electrons from the plasma to loose (gain) energy at the surface by creating (annihilating) electron-hole pairs in the metal, which is treated as a jellium half-space with an infinitely high workfunction, we obtain s_e≈10^-4 and τ_e≈10^-2 s. The product s_eτ_e≈10^-6 s has the order of magnitude expected from our earlier results for the charge of dust particles in a plasma but individually s_e is unexpectedly small and τ_e is somewhat large. The former is a consequence of the small matrix elements occurring in the simple model while the latter is due to the large binding energy of the electron. More sophisticated theoretical investigations, but also experimental support, are clearly needed because if s_e is indeed as small as our exploratory calculation suggests, it would have severe consequences for the understanding of the formation of surface charges at plasma boundaries. To identify what we believe are key issues of the electronic microphysics at inert plasma boundaries and to inspire other groups to join us on our journey is the purpose of this colloquial presentation.     

Improvement of electrical properties of silicon-based thin-film transistors by modifying technological fabrication processes

This paper is a review of technological process evolution associated to electrical performance improvement of silicon-based thin-film transistors (TFTs) that were performed mainly in the GM/IETR laboratory. The main objective in agreement with the fields of applications is to fabricate TFTs at a temperature low enough to be compatible with the substrates, glass substrates in a first place and flexible substrates in a second one, which implies several approaches. In fact, the electrical properties of the TFTs, mainly field-effect mobility of carriers in the channel, I _on/I _off drain current ratio, and subthreshold slope, are strongly dependent on the quality and the nature of the channel material, on the material quality and thus on the density of states at the interface with the gate insulator, and on the quality of the gate insulator itself. All the improvements are directly linked to all these aspects, which means an actual combination of the efforts. For the glass substrate, compatible technology processes such as deposition techniques, or solid phase, or laser crystallizations of active layers were studied and compared. The paper details all these approaches and electrical performances. In addition, some results about the use of a silicon–germanium compound as channel active layer and airgap transistors for which the insulator is released, complete the presentation of the evolution of the silicon-based TFTs during the last twenty years.     

Hamiltonian map approach to 1D Anderson model

A one-dimensional diagonal tight binding electronic system is analyzed with the Hamiltonian map approach to study analytically the inverse localization length of an infinite sample. Both the uncorrelated and the dichotomic correlated random potential sequences are considered in the evaluations of the inverse localization length. Analytical expressions for the invariant measure or the angle density distribution are the main motivation of this work in order to derive analytical results. The well-known uncorrelated weak disorder result of the inverse localization length is derived with a clear procedure. In addition, an analytical expression for high disorder is obtained near the band edge. It is found that the inverse localization length goes to 1 in this limit. Following the procedure used in the uncorrelated situation, an analytical expression for the inverse localization length is also obtained for the dichotomic correlated sequence in the small disorder situation.     

Electronic properties close to Dirac cone in two-dimensional organic conductor α-(BEDT-TTF)<Subscript>2</Subscript>I<Subscript>3</Subscript>

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, α-(BEDT-TTF)₂I₃ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the Dirac point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Dirac point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.