On the voltage sensitivity of current in electronic transport

The sensitivity of current-to-voltage is treated by defining an adequate parameter useful for a wide variety of cases within the context of ballistic electron transport. This parameter may be conceived as a normalized conductance which is studied in relation to electronic density of states.     

MJ and collision energy dependent attenuation of Rg (3P2) by CF3Br

The total attenuation cross-section of Rg (³P₂) (Rg = Ar, Kr) by the collision with CF₃Br is measured as a function of the magnetic sub level M_J of Rg (³P₂) and the collision energy. For Ar (³P₂), the attenuation process indicates a M_J dependence, in particular, the cross-section of the M_J = 0 state is lower compared with that for other states. On the other hand, Kr (³P₂) shows no M_J dependent attenuation.     

Effects of initial states on the quantum correlations in the generalized Grover search algorithm

We investigate the correlations between two qubits in the Grover search algorithm with arbitrary initial states by numerical simulation. Using a set of suitable bases, we construct the reduced density matrix and give the numerical expression of correlations relating to the iterations. For different initial states, we obtain the concurrence and quantum discord compared with the success probability in the algorithm. The results show that the initial states affect the correlations and the limit point of the correlations in the searching process. However, the initial states do not influence the whole cyclical trend.     

GW/BSE级别下的非绝热动力学模拟揭示桥连化学键对调控酞菁锌-富勒烯给体-受体复合物激发态弛豫过程的重要作用

本文采用基于多体格林函数方法和Bethe-Salpeter方程(GW/BSE)的电子结构计算方法和非绝热动力学模拟研究了两种不同桥连化学键构型(5-6构型和6-6构型)的酞菁锌-富勒烯(ZnPc-C₆₀)给受体复合物的激发态性质及其弛豫过程. 对于6-6构型,ZnPc-C₆₀的最低激发态S₁态为光谱明态,即ZnPc的局域激发(LE)态,因此,6-6构型的ZnPc-C₆₀在光激发之后几乎不会发生电荷分离过程. 相比之下,5-6构型的ZnPc-C₆₀的S₁态是C₆₀的LE态,为光谱暗态,而作为光谱明态的ZnPc的LE态的能量更高. 而且,在ZnPc和C₆₀的LE态之间还存在若干电荷转移(CT)态. 因此,电荷转移会在从高能的ZnPc的LE态到低能的C₆₀的LE态的弛豫过程中发生. GW/BSE级别的非绝热动力学模拟结果进一步验证了电子结构计算的结论,并给出了相关过程的时间尺度：从ZnPc到C₆₀的超快激发态能量转移过程在前200 fs完成;随后发生的是由C₆₀到ZnPc的超快空穴转移过程. 本工作表明不同的桥连化学键模式(即5-6和6-6构型)可用于调节ZnPc-C₆₀给体-受体复合物的激发态性质及其光电性质. 与此同时,本工作证明了GW/BSE级别的非绝热动力学方法是探索非周期性给体-受体复合物、有机金属配合物、量子点、纳米团簇等复杂体系的光诱导动力学的可靠工具.     

基于原子操纵技术的人工量子结构研究

扫描隧道显微镜原子操纵技术是指利用扫描探针在特定材料表面以晶格为步长搬运单个原子或分子的技术.它是纳米尺度量子物理与器件研究领域一种独特而有力的研究手段.利用这种手段,人们能够以原子或分子为单元构筑某些常规生长或微加工方法难以制备的人工量子结构,通过对格点原子、晶格尺寸、对称性、周期性的高度控制,实现对局域电子态、自旋序、以及能带拓扑特性等量子效应的设计与调控.原子操纵技术与超快测量及自动控制技术的结合,使得人们能够进一步研究原子级精准的量子器件,因而该技术成为探索未来器件新机理、新工艺的重要工具.本文首先简介原子操纵方法的发展过程和技术要点,然后分别介绍人工电子晶格、半导体表面人工量子点、磁性人工量子结构、人工结构中的信息存储与逻辑运算、单原子精度原型器件等方面的最新研究进展,以及单原子刻蚀和自动原子操纵等方面的技术进展,最后总结并展望原子操纵技术的应用前景和发展趋势.     

Generating Multidirectional Variable Hidden Attractors via Newly Commensurate and Incommensurate Non-Equilibrium Fractional-Order Chaotic Systems

This article investigates a non-equilibrium chaotic system in view of commensurate and incommensurate fractional orders and with only one signum function. By varying some values of the fractional-order derivative together with some parameter values of the proposed system, different dynamical behaviors of the system are explored and discussed via several numerical simulations. This system displays complex hidden dynamics such as inversion property, chaotic bursting oscillation, multistabilty, and coexisting attractors. Besides, by means of adapting certain controlled constants, it is shown that this system possesses a three-variable offset boosting system. In conformity with the performed simulations, it also turns out that the resultant hidden attractors can be distributively ordered in a grid of three dimensions, a lattice of two dimensions, a line of one dimension, and even arbitrariness in the phase space. Through considering the Caputo fractional-order operator in all performed simulations, phase portraits in two- and three-dimensional projections, Lyapunov exponents, and the bifurcation diagrams are numerically reported in this work as beneficial exit results.     

Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective

Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe₂ and TiTe₂, a Mott-insulating state in monolayer 1T-TaSe₂, and the monolayer specific 2D topological insulator 1T′-WTe₂, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe₂, the 2D topological insulators of 1T′-MoTe₂, and the CDW material 1T-VTe₂. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.     

Quantifying nonclassicality of multimode bosonic fields via skew information

We quantify the nonclassicality of multimode bosonic field states by adopting an information-theoretic approach involving the Wigner-Yanase skew information. The fundamental properties of the quantifier such as convexity, superadditivity, monotonicity, and conservation relations are revealed. The quantifier is illustrated by a variety of typical examples, and applications to the quantification of nonclassical correlations are discussed. Various extensions are indicated.     

Vector NLS solitons interacting with a boundary

We construct multi-soliton solutions of the n-component vector nonlinear Schrödinger equation on the half-line subject to two classes of integrable boundary conditions (BCs): the homogeneous Robin BCs and the mixed Neumann/Dirichlet BCs. The construction is based on the so-called dressing the boundary, which generates soliton solutions by preserving the integrable BCs at each step of the Darboux-dressing process. Under the Robin BCs, examples, including boundary-bound solitons, are explicitly derived; under the mixed Neumann/Dirichlet BCs, the boundary can act as a polarizer that tunes different components of the vector solitons. Connection of our construction to the inverse scattering transform is also provided.