Highly Luminescent Red Phosphorescent OLED with Interfacial Layers for Hole Transport and Electron Injection

Four kinds of red phosphorescent organic light-emitting devices were fabricated and compared to investigate the effect of interfacial layers for hole transport and electron injection. 1 nm-thick LiF in the device A and C and 1 nm-thick Cs₂CO₃ in the device B and D were deposited as an electron injection layer between the anode and the electron transport layer, and 5 nm-thick layer of dipyrazion[2,3-f:2′,2′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile[HATCN] was inserted as a hole transport interfacial layer between the hole injection layer and the hole transport layer only in the device C and D. Under a luminance of 1000 cd/m², the power efficiencies were 7.6 lm/W and 8.5 lm/W in the device A and B, and 8.6 lm/W and 13.4 lm/W in the device C and D. The quantum efficiency of the device D was 15.8% under 1000 cd/m² which was somewhat lower than those of the device A and C, but a little higher than that of the device B. The luminance of the device D was much higher than those of the other devices at a given votage. The luminance of the device D at 7 V was 23,710 cd/m², which was 13.0, 3.4, and 4.0 times higher than those of the device A, B, and C at the same voltage, respectively.     

Implementing a Two-Photon Three-Degrees-of-Freedom Hyper-Parallel Controlled Phase Flip Gate Through Cavity-Assisted Interactions

Hyper-parallel quantum information processing is a promising and beneficial research field. Herein, a method to implement a hyper-parallel controlled-phase-flip (hyper-CPF) gate for frequency-, spatial-, and time-bin-encoded qubits by coupling flying photons to trapped nitrogen vacancy (NV) defect centers is presented. The scheme, which differs from their conventional parallel counterparts, is specifically advantageous in decreasing against the dissipate noise, increasing the quantum channel capacity, and reducing the quantum resource overhead. The gate qubits with frequency, spatial, and time-bin degrees of freedom (DOF) are immune to quantum decoherence in optical fibers, whereas the polarization photons are easily disturbed by the ambient noise.     

Dynamic Variation of Excitonic Coupling in Excited Bilayer Graphene Quantum Dots?

The intermolecular interaction determines the photophysical properties of the organic aggregates, which are critical to the performance of organic photovoltaics. Here, excitonic coupling, an important intermolecular interaction in organic aggregates, between the π-stacking graphene quantum dots is studied by using transient absorption spectroscopy. We find that the spectral evolution of the ground state bleach arises from the dynamic variation of the excitonic coupling in the excited π-stacks. According to the spectral simulations, we demonstrate that the kinetics of the vibronic peak can be exploited as a probe to measure the dynamics of excitonic coupling in the excited π-stacks.     

Purcell Effect and Nonlinear Behavior of the Emission in a Periodic Structure Composed of InAs Monolayers Embedded in a GaAs Matrix

Enhancement of spontaneous emission in a resonant Bragg quantum well (QW) structure with 60 periods of triple InAs monolayers embedded in a GaAs matrix is studied experimentally and theoretically. From measurements of the time‐resolved photoluminescence, besides the QW exciton at 1.47 eV, a specific super‐radiant (SR) emission demonstrating nonlinear properties is found. The SR mode shows a near‐quadratic dependence of intensity on excitation power, while its energy position follows the Bragg condition. It is revealed that the SR mode shows a peculiar non‐monotonic dependence of intensity on direction, with a maximum observed at approximately 40°. The enhancement in the SR emission at a specific direction is correlated well with suggested theoretical consideration of the modal Purcell factor for periodic quantum well structures.     

Unidirectional Quantum Remote Control:Teleportation of Control-State

We investigate the problem of teleportation of unitary operations by unidirectional control-state telepor-tation and propose a scheme called unidirectional quantum remote control. The scheme is based on the isomorphismbetween operation and state. It allows us to store a unitary operation in a control state, thereby teleportation of theunitary operation can be implemented by unidirectional teleportation of the control-state. We find that the probabilityof success for implementing an arbitrary unitary operation on arbitrary M-qubit state by unidirectional control-stateteleportation is 4-M, and 2M ebits and 4M cbits are consumed in each teleportation.     

Integral Kernel Operators on Fock Space – Generalizations and Applications to Quantum Dynamics

A general theory of operators on Boson Fock space is discussed in terms of the white noise distribution theory on Gaussian space (white noise calculus). An integral kernel operator is generalized from two aspects: (i) The use of an operator-valued distribution as an integral kernel leads us to the Fubini type theorem which allows an iterated integration in an integral kernel operator. As an application a white noise approach to quantum stochastic integrals is discussed and a quantum Hitsuda–Skorokhod integral is introduced. (ii) The use of pointwise derivatives of annihilation and creation operators assures the partial integration in an integral kernel operator. In particular, the particle flux density becomes a distribution with values in continuous operators on white noise functions and yields a representation of a Lie algebra of vector fields by means of such operators.     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

Controlling quantum coherence of atom laser by light with strong strength

A new method for controlling the quantum coherence of atom laser by applying input light with strong strength is presented within the framework of quantum dynamical theory. Unlike the case of rotating wave approximation(RWA), we show that the non-classical properties, such as sub-Poisson distribution and quadrature squeezed effect, can appear in the output atom laser beam with time. By choosing suitable initial RF phase, a steady and brighter output of squeezed coherent atom laser is also available.     

Infra-red free-carrier absorption due to impurity scattering in semiconducting quantum well structures

The theory of free-carrier absorption (FCA) is developed, in the extreme quantum limit when the carriers are assumed to populate only the lowest quantized energy level, for quasi-two and one-dimensional semiconducting quantum well structures where the carriers are scattered by ionized impurities. The radiation field is assumed to be polarized in the plane of the layer in the quasi-two-dimensional case and along the length of the wire in the quasi-one-dimensional case. Expressions for FCA are obtained for the cases where the impurities are either in the well (background impurities) or outside the well (remote impurities). Variation of FCA is numerically studied with photon frequency and well width.     

Time evolution of non-Hermitian quantum systems and generalized master equations

We inquire into the time evolution of quantum systems associated with pseudo-or quasi-Hermitian Hamiltonians. We obtain, in the pseudo-Hermitian case, a generalized Liouville-von Neumann equation for closed systems. We show that quantum systems with quasi-Hermitian Hamiltonians admit the proper interpretation in terms of open quantum system and derive a generalized Lindblad-Kossakowski equation. Finally, we extend such formalism to the study of decaying systems. Partially supported by PRIN “Sintesi”.