Polymerization and nanocomposites properties of multifunctional methylmethacrylate POSS

Thermally induced polymerization of multifunctional methylmethacrylate POSS (MMA‐POSS) was studied in this work for preparation of polymer/POSS nanocomposites. The polymerization of MMA‐POSS could be promoted with benzoyl peroxide (BPO). Self‐assembly of POSS into a layer‐by‐layer structure in the MMA‐POSS polymer (TP‐MMA‐POSS) is observed with a transmission electron microscopy. An ultra‐low‐k value of about 1.85 is measured with TP‐MMA‐POSS. In addition, polyimide‐POSS nanocomposites are also prepared. These nanocomposites demonstrate good homogeneity and enhanced mechanical properties. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 5157–5166, 2008     

Direct patterning of poly(amic acid) and low‐temperature imidization using a crosslinker,a photoacid generator,and a thermobase generator

A positive‐type photosensitive polyimide (PSPI) based on poly(amic acid) (PAA), a crosslinker 1,1,1‐tris{4‐[2‐(vinyloxy)ethoxy]phenyl}ethane (TVPE), a photoacid generator (PAG) (5‐propylsulfonyloxyimino‐5H‐thiophen‐2‐ylidene)‐2‐(methylphenyl)acetonitrile (PTMA), and a thermobase generator (TBG) t‐butyl 2,6‐dimethylpiperidine‐1‐carboxylate (BDPC) has been developed as a promising material in microelectronics. The PAA was prepared from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA) and 4,4′‐oxydianiline (ODA) in dimethyl sulfoxide (DMSO). The PSPI, consisting of PAA (69 wt %), TPVE (21 wt %), PTMA (3 wt %), and BDPC (7 wt %), showed high sensitivity of 21 mJ/cm² and a high contrast of 6.8 when it was exposed to a 436‐nm line (g‐line), postbaked at 90 °C for 5 min, and developed with 1.69 wt % TMAHaq. A clear positive image of 8 μm line and space pattern was printed on film, which was exposed to 50 mJ/cm² of g‐line by a contact printing mode and fully converted to the corresponding polyimide (PI) pattern on heating at 200 °C, confirmed by FTIR spectroscopy. Thus, this system will be a good candidate for next generation PSPIs. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 3362–3369, 2009     

Preparation and characterization of sulfonated polyimide ionomers via post‐sulfonation method for fuel cell applications

This paper describes our work on the synthesis of a series of sulfonated homo‐/co‐polyimides (SPI) which were obtained by post‐sulfonation method over three steps. In the first step, 4,4′‐oxydianiline (ODA) and 4,4′‐diaminodiphenylsulfone (DDS) dissolved in N‐methyl pyrrolidone (NMP) were reacted with benzophenonetetracarboxylic dianhydride (BTDA) in order to yield poly(amic acid) (PAA). Secondly, precipitated PAA was sulfonated via concentrated sulfuric acid (95–98%) at room temperature to give post‐sulfonated PAA (PSPAA). Finally, PSPAA was converted into post‐sulfonated PI (PSPI) by the thermal imidization method. PSPIs with ion exchange capacity (IEC) ranging from 0.20 to 0.67 meq/g were prepared. The thermal properties of the PSPIs were evaluated and high desulfonation temperature was found in the range of 190–350°C, suggesting the high stability of sulfonic acid groups. In water, PSPI‐5 membrane displayed similar proton conductivity to Nafion®117, whereas this membrane showed poor conductivity in dry state. All PSPIs displayed good solubility in common polar aprotic solvents such as NMP and dimethylacetamide (DMAc). Furthermore, the effects of post‐sulfonation reaction on chemical structure, thermal oxidative behavior, and physical properties of the PSPI membranes such as membrane quality/stability and water uptake were discussed. Copyright © 2008 John Wiley & Sons, Ltd.     

Pattern formation of polyimide by using photosensitive polybenzoxazole as a top layer

A versatile method for positive-type patterning of polyimide (PI) based on a two-layer photosensitive poly(benzoxazole) (PSPBO) and poly(amic acid) (PAA) film has been developed to provide a promising material in the field of microelectronics. This patterning system consisted of a pristine PAA thick bottom-layer and a poly(o-hydroxy amide) (PHA) thin top layer with 9,9-bis[4-(tert-butoxycarbonyl-methyloxy)phenyl]fluorene (TBMPF) as a dissolution inhibitor, and (5-propylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)-acetonitrile (PTMA) as a photoacid generator (PAG). The PHA and PAA were prepared from 4,4′-(hexafluoroisopropylidene)-bis(o-aminophenol) and 4,4′-oxybis(benzoic acid) derivatives, and 3,3′,4,4′-biphenyltetracarboxylic dianhydride and 4,4′-oxydianiline, respectively, in N,N-dimethylacetamide. This two-layer system based on PHA (150-nm thickness) and PAA (1.5-μm thickness) showed high sensitivity of 35 mJ/cm² and high contrast of 10.3 when exposed to a 365 nm line (i-line), post-baked at 100 °C for 2 min, and developed in a 2.38 wt.% tetramethylammonium hydroxide aqueous solution/5 wt.% iso-propanol at 25 °C. A clear positive image of a 4-μm line-and-space pattern was printed on a film which was exposed to 100 mJ/cm² of i-line by a contact-printing mode and fully converted to the corresponding PBO/PI pattern upon heating at 350 °C, confirmed by FT-IR spectroscopy. This two-layer system could be applied to the patterning of various PAAs.     

Polyimide/polyoxometalate copolymer thin films: synthesis,thermal and dielectric properties

A mono‐lancunary keggin‐type decatungstosilicate (SiW₁₁) polyoxometalate (POM) modified by γ‐aminopropyltriethoxysilane (KH550) was incorporated into polyimide (PI) through copolymerization. Nuclear magnetic resonance (NMR), fourier transition infrared spectroscopy (FTIR), and wide angle X‐ray diffraction (WAXD) were used to characterize the structure and composition of the polyoxometalate–organosilane hybrid (SiW₁₁KH550) and PI/SiW₁₁KH550 copolymers. The differential scanning calorimetry (DSC) studies indicate that the glass transition temperature (T_g) of PI/SiW₁₁KH550 copolymers increases from 330°C (for neat PI) to 409°C (for the copolymer sample with 10 wt% of SiW₁₁KH550). Dielectric measurement showed that both the dielectric constant and the dielectric loss for the copolymer thin films decreased with the increase in SiW₁₁KH550 content, and the dielectric constant and dielectric loss values decreased to 2.1 and 3.54 × 10^?3, respectively, for the copolymer sample with 10 wt% of SiW₁₁KH550. The incorporation of SiW₁₁KH550 into polymer matrices is a promising approach to prepare PI films with a low dielectric constant and low dielectric loss. Copyright © 2009 John Wiley & Sons, Ltd.     

聚酰亚胺薄膜的电致发光和光致发光

测量了氙灯辐照后聚酰亚胺(PI)薄膜的光致发光(PL)强度、PL谱和氙灯辐照后直流高电场下PI薄膜的电致发光(EL)强度、EL谱、XRD谱和吸收光谱,研究了其EL、PL特性与微观结构的关系.结果表明:PI薄膜的PL强度随测量时间呈指数衰减,EL强度随场强呈指数增长;辐照39 h后,PI的预击穿场强为2.56MV/cm,...     

聚酰亚胺薄膜表面粗糙度的影响因素

 采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

Effect of a “Zn Bridge” on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials

Polyimide memory materials with a donor–acceptor structure based on a charge-transfer mechanism exhibit great potential for next-generation information storage technology due to their outstanding high-temperature resistance and good dimensional and chemical stability. Precisely controlling memory performance by limited chemical decoration is one of core challenges in this field. Most reported work mainly focuses on designing novel and elaborate electron donors or acceptors for the expected memory behavior of polyimides; this takes a lot of time and is not always efficacious. Herein, we report a series of porphyrinated copolyimides coPI−Znx (x=5, 10, 20, 50, 80), where x represents the mole percentage of Zn ion in the central core of the porphyrin. Experimental and theoretical analysis indicate that the Zn ion could play a vital bridge role in promoting the formation and stabilization of a charge-transfer complex by enhancing the hybridization of local and charge transfer (HLCT) excitations of porphyrinated polyimides, endowing coPI−Znx with volatile random access memory performance and continuously tunable retention time. This work could provide one simple strategy to precisely regulate memory performance merely by altering the metal content in porphyrinated polyimides.     

A new family of heavy transition metal coordination compounds and its application,I. Design,synthesis and characterization of volatile organohafnium precursors

The first three representatives of a new family of volatile organohafnium compounds suitable as metallo-organic chemical vapour deposition precursors were synthesized. A combination of cyclopentadienyl and alkoxo-ligands with a bicyclo[2.2.1]heptanc framework was used. Volatility at relatively low temperatures for hafnium compounds was found and the precursors were characterized by elemental analysis and spectroscopic methods (IR, ¹H and ¹³C NMR, mass spectrometry and mass-analysed ion kinetic energy spectroscopy). The outlook for use in hafnium functional materials synthesis was derived from the fragmentation data.     

Thermal Stability of Sol-Gel Hydrotalcites

Sol-Gel Hydrotalcites were synthesized using magnesium ethoxide and variable aluminum sources: aluminum acetilacetonate, aluminum chloride, aluminum nitrate and aluminum sulfate; in all cases, the gelation was done at pH 10. X-ray diffraction studies show that the crystallinity depends on the aluminum precursor used. The crystallinity was found in the order aluminum acetylcetonate>aluminum chloride>aluminum nitrate>aluminum sulfate. The precursor determines the sintering behavior as well.