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71.
李宁  陈金菊  邓宏 《发光学报》2010,31(2):219-222
采用单源化学气相沉积(SSCVD)法,在石英衬底上以Au为缓冲层,Zn4(OH)2(O2CCH3)6.2H2O为固相源制备ZnO薄膜。SEM和XRD测试ZnO薄膜的微结构,结果表明:相对于SiO2衬底上生长的ZnO薄膜,Au/SiO2衬底上生长的ZnO薄膜具有较好的结晶质量和表面平整度;对制备ZnO薄膜的衬底温度进行了工艺优化,结果表明:500℃时制备的ZnO薄膜颗粒大小均匀,结晶质量较好;通过荧光光谱仪对Au/SiO2衬底上的ZnO薄膜进行光致发光(PL)谱测试,ZnO薄膜在400nm出现紫光发射峰,而没有出现与缺陷相关的深能级发射峰,表明ZnO薄膜具有较好的结晶质量。  相似文献   
72.
在高温超导滤波器的制备过程中,针对所使用的高温超导薄膜的特点,采用了两种刻蚀方法——湿化学刻蚀法和离子束刻蚀法,设计对比了两种刻蚀的制作流程及其优缺点,并用两种方法分别制备了高温超导滤波器,对微波特性做了对比分析。得出离子束刻蚀对超导薄膜的性能影响要小一些,用此方法制备的高温超导滤波器具有更好的微波特性。  相似文献   
73.
D’Addato et al. [S. D’Addato, P. Luches, R. Gotter, L. Floreano, D. Cvetko, A. Morgante, A. Newton, D. Martin, P. Unsworth, P. Weightman, Surf. Rev. Lett. 9 (2002) 709] studied the variation with Fe coverages in the relative Fe L3-M4,5M4,5 Auger electron spectroscopy (AES) spectral satellite intensity of ultrathin Fe films grown on Cu(1 0 0) by sweeping photon excitation energy through the Fe L2-level ionization threshold. They interpreted that the M4,5 hole in the L3M4,5 double-hole state created by the L2-L3M4,5 Coster–Kronig (CK) decay remains localized for longer than the L3-hole lifetime for the 0.3 and 10 ML coverages but has a lifetime comparable to the L3-hole lifetime for the 1 ML coverages. The present many-body theory shows that when the M4,5 hole created either by the CK decay or by the L3M4,5 shakeoff hops away from the ionized atomic site and becomes completely screened out prior to the L3-hole decay, the Fe L2-L3M4,5-L3-M4,5M4,5 AES main line as well as the Fe L3 M4,5 (satellite)-L3-M4,5M4,5 one, both of which are identical in line shape to the Fe L3-M4,5M4,5 one, dominate in the Fe CK preceded AES spectrum. The present analysis shows that the delocalization time of the M4,5 hole created in the 1 ML Fe/Cu(1 0 0) system by the L2-L3M4,5 CK decay is much shorter than the L3-hole lifetime so that the Fe L3-M4,5M4,5 AES spectral line shape hardly changes, except for the presence of a very weak spectator L2-L3M4,5-M4,5M4,5M4,5 AES satellite, when the photon excitation energy is swept through the Fe L2-level ionization threshold. For the 0.3 ML coverages the M4,5-hole delocalization time is still shorter than the L3-hole lifetime.  相似文献   
74.
We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4dxz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.  相似文献   
75.
Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (Ts) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at Ts ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface morphology studies of the films using AFM reveal the formation of nanostructured indium oxide thin films.  相似文献   
76.
在多晶A l2O3衬底上,以B2H6作为硼源,化学气相沉积先驱B薄膜,采用Mg扩散方法,在不同退火时间条件下制备了MgB2超导薄膜。通过电阻-温度曲线测量、X射线衍射分析和扫描电子显微镜形貌观测方法,研究了退火时间对MgB2薄膜的超导特性、晶体结构、表面形貌的影响。  相似文献   
77.
We consider contact line deposition of an evaporating thin drop. Following Dupont’s proposal (unpublished), we focus on transport dynamics truncated by a maximal concentration as the single deposition mechanism. The truncated transport process, formalized as the “pipe model”, admits a characteristic shock front that has a robust functional form and depends only on local hydrodynamic properties. By applying the pipe model, we solve the density profile in different asymptotic regimes. In particular, we find that near the contact line the density profile follows a scaling law that is proportional to the square root of the concentration ratio defined as the initial solute volume concentration divided by the maximal concentration. The maximal deposit density occurs at about 2/3 of the total drying time for uniform evaporation and 1/2 for diffusion-controlled evaporation. Away from the contact line, areal density decays exponentially with the radial distance to the power of -3 for the uniform evaporation and -7 for the diffusion-controlled evaporation.  相似文献   
78.
The Multicaloric effect in the PbZr0.8Ti0.2O3 thin films is investigated with the application of sine wave electric field, dc electric field and stress using a phase field method combined with the thermodynamic analysis. The simulation results show that the adiabatic temperature change-electric field curve presents a shape of butterfly in the presence of the sine wave electric field. In order to detect the effect of the sine wave electric field, the multicaloric effect and the domain structures under the direct electric field and the sine wave electric field are compared. It is found that the domain switching behaviors are quite different under the different applied electric fields. And the negative multicaloric effect in the PbZr0.8Ti0.2O3 thin film is attribute to the domain switching under the external field.  相似文献   
79.
近空间升华法制备CdS多晶薄膜的研究   总被引:1,自引:0,他引:1  
系统地研究了近空间升华法(CSS)制备CdS薄膜沉积速率的影响因素。发现CdS薄膜的沉积速率随升华源温度的升高而增大,但随衬底温度和沉积气压的上升而下降。对所制备样品的结构、表面形貌和光谱透过率特性进行了测试,结果表明:(1)不同氧分压下沉积的CdS薄膜沿(103)晶向择优生长。CdCl2氛围下退火后,(103)晶向的优势得到进一步加强;(2)不同氧分压制备的CdS薄膜致密且粒径均匀,晶粒的大小随着衬底温度的升高而增大,但薄膜的粗糙度也随之增大;(3)随着CdS薄膜厚度的减小,可见光中短波段的透过率有所增大,有利于提高太阳电池的短波光谱响应。并将CSS制备的CdS多晶薄膜用于CdTe太阳电池的制作,获得了10.29%的光电转换效率,初步验证了该制作工艺的可行性。  相似文献   
80.
Low-temperature magnetic force microscopy (LT-MFM) was used to study the distribution of superconducting vortices in Nb above a square array of 1 μm-sized circular ferromagnetic dots in a magnetic-vortex state. The force that the MFM tip exerts on the individual vortex in the depinning process was used to estimate the spatial modulation of the pinning potential. It was found, that the superconducting vortices which are preferably located on top of the Py dots experience a pinning force, about 15 times stronger as compared to the pinning force in the pure Nb film. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located above the dots.  相似文献   
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