Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.     

Measurement of the impedance of very thin superconducting YBaCuO films at 10 GHz with a cavity perturbation method between 4 and 300 K

We have measured the complex film impedance 1/σd (σ conductivity, d film thickness) of three YBaCuO thin films with d = 44, 115, and 168 nm on MgO substrates at 10.2 GHz in the temperature range between 300 and 4 K. Below T_c, the experimental results are discussed in terms of the two-fluid model and the BCS theory. The residual resistance decreases with the film thickness. The thinnest film has a residual surface resistance of 3 · 10^?4 Ω. For this film, the complex microwave conductivity is calculated and compared with the models. Apart from the residual resistance, the measured conductivity is in agreement with the peak caused by the energy gap of the BCS theory. All measurements were performed with a cavity perturbation method which we have to our knowledge applied for the first time to superconducting thin films. The method allows to determine the complex impedance of films with arbitrary thickness. In particular, films with thicknesses small compared to the skin depth δ or the London penetration depth λ can be measured. Therefore, we are able to measure the impedance both in the normal and superconducting state.     

AMT对青铜文物缓蚀作用理论研究

：5-氨基-2-巯基-1,3,4-噻二唑（AMT）能和青铜器表面铜离子作用生成一种配位型聚合物的保护膜[AMT –Cu (Ⅰ)]n,并将其中的氯离子置换出来,避免了青铜器的进一步腐蚀。为了深入了解AMT的缓蚀作用机理,本文采用密度泛函理论（DFT）和自然键轨道理论（NBO）,在B3LYP/6-31+G（d, p）水平上对AMT中反应活性位点的确定及活性原子所带电荷和杂化形式作了分析,并利用Multiwfn波函数分析了反应前后前线轨道能的变化。结果表明,-SH基中的S原子能与Cu(Ⅱ)形成有效的共价键,而N6原子可与Cu(Ⅱ)离子形成配位键,促使聚合物膜[AMT-Cu(Ⅰ)]n的形成。并且从概念DFT的活性指数（主要为 , , , , ）比较中发现,AMT-Cu(Ⅰ)-H较AMT的亲电性指数增加,有利于形成高聚物膜,而且反应前后AMT构型中的Ｃ、N、S却始终在同一平面,而C-S和C-N键键长和键角均有不同程度的变化。     

电子束蒸发在不同Ar气氛下外退火制备MgB2超导薄膜

制备高质量的MgB2薄膜是实现MgB2超导电子器件应用的前提和基础.我们用电子束蒸发B膜和Mg/B多层膜为前驱然后后退火的方法,分别在高温区(~900℃)和中温区(~750℃)成功获得了MgB2超导薄膜.改变退火的Ar气压条件,采用B膜前驱退火的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc~35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱退火中观察到的完全不同的退火气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对退火气压效应给出了自己的分析和解释,为今后进一步细致研究退火过程中的薄膜生长机制提供了参考.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

非晶态合金薄带与膜的巨磁电阻抗效应理论及计算

通过建立具有平面近横向各向异性场的非晶态合金薄带及膜的磁畴结构模型，利用线性化Maxwell方程组及Landau-Lifshitz方程，推出了在高频交变磁场及外加面内轴向直流磁场H_ex作用下的铁磁材料的与取向相关的磁导率表达式，得到了对方位角平均的相对磁导率及阻抗的计算式，导出了磁导率与张量磁化率分量间的关系，对材料磁导率的实部及虚部随H_ex的变化进行了计算，并给出了对应的磁谱图.建立的磁导率与外磁场的理论关系可将Panina及Kraus给出的理论结果统一起来. 关键词： 非晶态合金薄带及膜 取向相关磁导率 GMI效应理论与计算 近横向各向异性场     

Nonlinear optical characterization of cluster dynamic in water in oil microemulsion by a pump probe laser beam technique

We present a new pump probe laser beams configuration for the nonlinear optical characterization of microemulsions. We detect the variation of the on-axis optical intensity of the probe beam as generated by the concentration profile induced in an optically thin film of microemulsion by the pump beam. A mathematical model has been introduced to describe the phenomenon. The technique allows the determination of both Kerr-like optical nonlinearity and time constants and, therefore, it gives information both on cluster dimension and their shape. We discuss its application to WAD (water/AOT/decane, where AOT denotes sodium-bis-di-ethyl-sulfosuccinate) with the application of a strong electric field of optical source. Comparison between theoretical predictions and experimental results confirms the presence of giant optical nonlinearity in the absence of turbidity divergence. Chainlike shape of clusters, of the kind already reported with the application of strong electric field, could justify this result. Received 26 October 2002 RID="a" ID="a"e-mail: vicari@na.infn.it     

Atomic Vibrational Dynamics of Thin Films Studied by Nuclear Resonant Inelastic X-Ray Scattering: Amorphous Tb1−x Fe x Alloys

Hyperfine Interactions - Nuclear resonant inelastic X-ray scattering (NRIXS) of 14.4125 keV synchrotron radiation was used to measure directly the partial vibrational density of states (VDOS),...