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51.
Tomohito Ogura Tomoya Higashihara Mitsuru Ueda 《Journal of polymer science. Part A, Polymer chemistry》2009,47(13):3362-3369
A positive‐type photosensitive polyimide (PSPI) based on poly(amic acid) (PAA), a crosslinker 1,1,1‐tris{4‐[2‐(vinyloxy)ethoxy]phenyl}ethane (TVPE), a photoacid generator (PAG) (5‐propylsulfonyloxyimino‐5H‐thiophen‐2‐ylidene)‐2‐(methylphenyl)acetonitrile (PTMA), and a thermobase generator (TBG) t‐butyl 2,6‐dimethylpiperidine‐1‐carboxylate (BDPC) has been developed as a promising material in microelectronics. The PAA was prepared from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA) and 4,4′‐oxydianiline (ODA) in dimethyl sulfoxide (DMSO). The PSPI, consisting of PAA (69 wt %), TPVE (21 wt %), PTMA (3 wt %), and BDPC (7 wt %), showed high sensitivity of 21 mJ/cm2 and a high contrast of 6.8 when it was exposed to a 436‐nm line (g‐line), postbaked at 90 °C for 5 min, and developed with 1.69 wt % TMAHaq. A clear positive image of 8 μm line and space pattern was printed on film, which was exposed to 50 mJ/cm2 of g‐line by a contact printing mode and fully converted to the corresponding polyimide (PI) pattern on heating at 200 °C, confirmed by FTIR spectroscopy. Thus, this system will be a good candidate for next generation PSPIs. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 3362–3369, 2009 相似文献
52.
Hüseyin Deligz Sibel Vatansever Faruk
ksüzmer S. Naci Ko Saadet
zgümü M. Ali Gürkaynak 《先进技术聚合物》2008,19(8):1126-1132
This paper describes our work on the synthesis of a series of sulfonated homo‐/co‐polyimides (SPI) which were obtained by post‐sulfonation method over three steps. In the first step, 4,4′‐oxydianiline (ODA) and 4,4′‐diaminodiphenylsulfone (DDS) dissolved in N‐methyl pyrrolidone (NMP) were reacted with benzophenonetetracarboxylic dianhydride (BTDA) in order to yield poly(amic acid) (PAA). Secondly, precipitated PAA was sulfonated via concentrated sulfuric acid (95–98%) at room temperature to give post‐sulfonated PAA (PSPAA). Finally, PSPAA was converted into post‐sulfonated PI (PSPI) by the thermal imidization method. PSPIs with ion exchange capacity (IEC) ranging from 0.20 to 0.67 meq/g were prepared. The thermal properties of the PSPIs were evaluated and high desulfonation temperature was found in the range of 190–350°C, suggesting the high stability of sulfonic acid groups. In water, PSPI‐5 membrane displayed similar proton conductivity to Nafion®117, whereas this membrane showed poor conductivity in dry state. All PSPIs displayed good solubility in common polar aprotic solvents such as NMP and dimethylacetamide (DMAc). Furthermore, the effects of post‐sulfonation reaction on chemical structure, thermal oxidative behavior, and physical properties of the PSPI membranes such as membrane quality/stability and water uptake were discussed. Copyright © 2008 John Wiley & Sons, Ltd. 相似文献
53.
Tomohito Ogura 《European Polymer Journal》2010,46(7):1576-1581
A versatile method for positive-type patterning of polyimide (PI) based on a two-layer photosensitive poly(benzoxazole) (PSPBO) and poly(amic acid) (PAA) film has been developed to provide a promising material in the field of microelectronics. This patterning system consisted of a pristine PAA thick bottom-layer and a poly(o-hydroxy amide) (PHA) thin top layer with 9,9-bis[4-(tert-butoxycarbonyl-methyloxy)phenyl]fluorene (TBMPF) as a dissolution inhibitor, and (5-propylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)-acetonitrile (PTMA) as a photoacid generator (PAG). The PHA and PAA were prepared from 4,4′-(hexafluoroisopropylidene)-bis(o-aminophenol) and 4,4′-oxybis(benzoic acid) derivatives, and 3,3′,4,4′-biphenyltetracarboxylic dianhydride and 4,4′-oxydianiline, respectively, in N,N-dimethylacetamide. This two-layer system based on PHA (150-nm thickness) and PAA (1.5-μm thickness) showed high sensitivity of 35 mJ/cm2 and high contrast of 10.3 when exposed to a 365 nm line (i-line), post-baked at 100 °C for 2 min, and developed in a 2.38 wt.% tetramethylammonium hydroxide aqueous solution/5 wt.% iso-propanol at 25 °C. A clear positive image of a 4-μm line-and-space pattern was printed on a film which was exposed to 100 mJ/cm2 of i-line by a contact-printing mode and fully converted to the corresponding PBO/PI pattern upon heating at 350 °C, confirmed by FT-IR spectroscopy. This two-layer system could be applied to the patterning of various PAAs. 相似文献
54.
A mono‐lancunary keggin‐type decatungstosilicate (SiW11) polyoxometalate (POM) modified by γ‐aminopropyltriethoxysilane (KH550) was incorporated into polyimide (PI) through copolymerization. Nuclear magnetic resonance (NMR), fourier transition infrared spectroscopy (FTIR), and wide angle X‐ray diffraction (WAXD) were used to characterize the structure and composition of the polyoxometalate–organosilane hybrid (SiW11KH550) and PI/SiW11KH550 copolymers. The differential scanning calorimetry (DSC) studies indicate that the glass transition temperature (Tg) of PI/SiW11KH550 copolymers increases from 330°C (for neat PI) to 409°C (for the copolymer sample with 10 wt% of SiW11KH550). Dielectric measurement showed that both the dielectric constant and the dielectric loss for the copolymer thin films decreased with the increase in SiW11KH550 content, and the dielectric constant and dielectric loss values decreased to 2.1 and 3.54 × 10?3, respectively, for the copolymer sample with 10 wt% of SiW11KH550. The incorporation of SiW11KH550 into polymer matrices is a promising approach to prepare PI films with a low dielectric constant and low dielectric loss. Copyright © 2009 John Wiley & Sons, Ltd. 相似文献
55.
56.
采用热蒸发气相沉积聚合方法(VDP)制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明:设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚(PMDA和ODA)单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。 相似文献
57.
Jiacong Guo Yankun Zhang Dr. Guofeng Tian Prof. Deyang Ji Prof. Shengli Qi Prof. Dezhen Wu 《Chemistry (Weinheim an der Bergstrasse, Germany)》2021,27(49):12526-12534
Polyimide memory materials with a donor–acceptor structure based on a charge-transfer mechanism exhibit great potential for next-generation information storage technology due to their outstanding high-temperature resistance and good dimensional and chemical stability. Precisely controlling memory performance by limited chemical decoration is one of core challenges in this field. Most reported work mainly focuses on designing novel and elaborate electron donors or acceptors for the expected memory behavior of polyimides; this takes a lot of time and is not always efficacious. Herein, we report a series of porphyrinated copolyimides coPI−Znx (x=5, 10, 20, 50, 80), where x represents the mole percentage of Zn ion in the central core of the porphyrin. Experimental and theoretical analysis indicate that the Zn ion could play a vital bridge role in promoting the formation and stabilization of a charge-transfer complex by enhancing the hybridization of local and charge transfer (HLCT) excitations of porphyrinated polyimides, endowing coPI−Znx with volatile random access memory performance and continuously tunable retention time. This work could provide one simple strategy to precisely regulate memory performance merely by altering the metal content in porphyrinated polyimides. 相似文献
58.
Novel polyimides obtained from a new aromatic diamine (BAPO) containing pyridine and 1,3,4‐oxadiazole moieties for removal of Co(II) and Ni(II) ions 下载免费PDF全文
Novel, thermally stable polyimides (PIs) containing a 1,3,4‐oxadiazole and pyridine moieties based on a new aromatic diamine 2,5‐bis‐(aminopyridine‐2‐yl)‐1,3,4‐oxadiazole, BAPO, were synthesized. The prepared polymers were soluble in dimethysulfoxide (DMSO) and concentrated sulfuric acid at room temperature as well as in polar and aprotic solvents, such as, N‐methylpyrrolidone (NMP) and N,N‐dimethylacetamide (DMAc) at elevated temperature. Thermal behaviors of the PIs were studied by thermogravimetric analysis/dynamic thermal analysis (TGA‐DTA) and differential scanning calorimetry (DSC). The inherent viscosities of the PI solutions were in the range of 0.38–0.61 dl/g (in DMSO with a concentration of 0.125 g/dl at 25 ± 0.5°C). The removal of Co(II) and Ni(II) ions from aqueous solutions was performed using polymer 6, which was obtained from BAPO and 3,3′,4,4′‐benzophenonetetracarboxylic dianhydride (BTDA). The maximum adsorption capacity was observed for Co(II) ion at pH = 7.0 (110.4 mg g?1, 1.87 mmol g?1). Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
59.
利用多尺度建模方法构建了聚酰亚胺/钽铌酸钾纳米颗粒复合物模型, 通过分子动力学模拟研究了不同尺寸钽铌酸钾纳米颗粒(5.5, 8.0, 9.4, 10.5, 11.5 Å)对复合材料的结构、弹性模量和相互作用能的影响规律, 并通过计算纳米颗粒表面原子键能和单位表面积原子数目探究了复合物机械性能提高的内部机理. 聚酰亚胺和聚酰亚胺/钽铌酸钾复合材料的杨氏模量分别为2.91和3.17 GPa, 泊松比分别为0.37和0.35, 钽铌酸钾纳米颗粒的引入可以显著改善聚酰亚胺的机械性能. 纳米颗粒表面原子的键能为8.62-54.37 kJ·mol-1, 表明颗粒与基体主要通过范德华力作用结合且有氢键存在. 计算结果表明, 相同掺杂比例下, 纳米颗粒尺寸越小, 纳米颗粒表面原子数目越大, 颗粒与基体作用更强, 杨氏模量的提高幅度越大, 尺寸效应越显著. 因此, 掺杂小尺寸纳米颗粒是提高聚酰亚胺机械性能的有效途径. 相似文献
60.
A silane‐modified mono‐lacunary Keggin‐type polyoxometalate (POM), (Bu4N)4[SiW11O39{(CH2?CH? Si)2O}] (SiW11? CH?CH2), was obtained by reaction of vinyltrimethoxysilane with K8(SiW11O39) in acidic MeCN/H2O mixed solutions. Then, the modified polyoxometalate was physically blended with the pyromellitic dianhydride (PMDA)‐4,4′‐oxydianiline (ODA) poly(amic acid) and the blends were thermally imidized to form polyimide/ polyoxometalate composites. The X‐ray diffraction (XRD) analysis indicates that the polyoxometalate clusters cannot form crystalline structures in the composite, suggesting that the blending leads to improved compatibility between the polymer matrix and the modified polyoxometalate. The EDS (W‐mapping) studies on the composite films reveal that the polyoxometalate clusters are well dispersed in the polyimide matrix. The physical incorporation of modified POM into polyimide remarkably reduced the dielectric constant of the latter from 3.29 to 2.05 when 20 wt% of SiW11? CH?CH2 was used. Besides, the addition of the modified POM into polyimide increased the storage modulus of polyimide without severely affecting its thermal properties. Copyright © 2009 John Wiley & Sons, Ltd. 相似文献