THEORETICAL DEPENDENCE OF LONG WAVELENGTH PHOTOEMISSION UPON THE SIZE OF Ag NANOPARTICLES EMBEDDED IN BaO SEMICONDUCTOR THIN FILM

The dependence of long wavelength photoemission upon the size of Ag nanoparticles embedded in a BaO semiconductor is predicted and discussed theoretically. The calculated results show that the increase in the diameter of the Ag nanoparticle, in the range from 1.5 to 37.0nm, leads to the emergence of a roughly Gaussian form of the photoemission spectra and the peaks become markedly narrower. The results also show that the increase in the diameter of the Ag nanoparticle leads to the decrease of the long wavelength threshold. The incident light wavelength corresponding to the peak value of the photoemission gets bigger with the increase of the size of Ag nanoparticles, thus showing a redshift.     

“薄膜即是界面，界面即是薄膜”：二维有机半导体晶体的研究进展

自首次于聚乙炔发现导电现象以来,具有共轭结构的有机半导体材料赖其种类丰富多样、 制备工艺简捷低耗、以及优异的机械柔性等特点,在“后硅时代”中有望以先进光电子设备展现 其广阔前景,因而多年来备受学界和产业界的瞩目。如何进一步阐明有机半导体中结构和性能之 间的关系,探索电荷载流子微观动力学行为,构筑高性能、新功能的有机光电子器件,是当下有 机电子学领域的前沿核心问题,也是保证其持续发展的基石。近年来,二维有机半导体晶体材料 在秉持高度有序的分子排列与极低的杂质缺陷浓度等优点的同时,更是以“薄膜即是界面、界面 即是薄膜”为一帜,克服传统体材料在研究与应用中的瓶颈,为揭示材料构性关系及其中基本物 理过程提供了良好的平台,也是实现多样化的新型有机光电子器件的理想材料,有望为微纳电子 领域带来新一轮变革。本文从二维有机半导体晶体的制备工艺、电荷载流子微观动力学行为,再 到新型器件的光电功能应用等方面,综述了最新研究进展,做出总结和展望,并提出目前面临的 挑战及未来研究方向,旨在为进一步深入理论研究,结合有机材料与先进技术,推动有机电子学 的发展提供有益帮助。     

基于金属卤化物钙钛矿材料的高效发光二极管

金属卤化物钙钛矿半导体既在光伏器件研究中获得巨大进展,又在发光应用中体现出明显优势。金属卤化物钙钛矿半导体的荧光转化效率高、发光峰形窄、发射光谱可调控并可覆盖整个可见光范围,从而使得该类材料所制备的发光二极管有望满足下一代显示技术应用的性能要求。文章在简要叙述发光二极管基本原理的基础上,分别介绍了钙钛矿材料的结构和荧光特性、钙钛矿发光二极管的电致发光特性,以及钙钛矿发光二极管进入实际应用所必须解决的器件寿命、离子迁移和光谱不稳定性等主要技术问题,最后讨论了钙钛矿发光技术所面临的机遇和挑战。     

Optical manipulation of coupled spins in magnetic semiconductor systems: A path toward spin optoelectronics

Experimental results based on the optical excitations in the III–V-based ferromagnetic semiconductors are reviewed. On the bases of results obtained by both cw- and femto-second-pulse optical excitation, we point out the feasibility of magnetization rotation in the hole-mediated ferromagnetic semiconductor (Ga,Mn)As via the angular momentum and photon energy of light. Here, p–d exchange interaction is the effective channel that transmits a small change in spin axis of the valence band to the ferromagnetically coupled Mn spin sub-system. Within the limit of this picture, we also discuss a hole–Mn spin complex for which hole and Mn spins rotate and relax together upon optical excitation. Partial magnetization reversal observed in the experiments of the electrical current injection in (Ga,Mn)As-based magnetic-tunnel-junction devices is also reviewed in view of the effects caused by the spin-polarized holes. Here, we point out that a spin current of 10⁵ A/cm² may be reduced further if spin injection efficiency can be improved by the optimal designs of the device structure.     

等离子体纳米结构中的Fano共振效应及其应用

Fano共振效应是一种具有非对称线型的共振散射现象,起源于共振过程和非共振过程的量子干涉效应。近年来,在等离子体纳米结构中Fano共振现象也被发现,并成为纳米光子学的一个研究热点。等离子体Fano共振通常具有较窄的光谱线宽,且不能直接与入射光耦合,只能局域在近场,强的近场局域特性可以获得巨大的表面电磁场增强。由于等离子体Fano共振独特的光学特性,已经被应用到单分子探测、高灵敏度传感、增强光谱、完美吸收、电磁诱导透明和慢光光子学器件等众多领域当中。     

Design of Enhanced Catalysts by Coupling of Noble Metals (Au,Ag) with Semiconductor SnO2 for Catalytic Reduction of 4‐Nitrophenol

The reduction of 4‐nitrophenol (Nip) into 4‐aminophenol (Amp) by NaBH₄, which is catalyzed by both binary and ternary yolk–shell noble‐metal/SnO₂ heterostructures, is reported. The binary heterostructures contain individual Au or Ag nanoparticles (NPs) and the ternary heterostructures contain both Au and Ag NPs. The Au@SnO₂ yolk–shell NPs are synthesized via a silica seeds‐mediated hydrothermal method. Subsequently, the Au@SnO₂@Ag and Au@SnO₂@Au yolk–shell–shell (YSS) NPs are synthesized, whereby SnO₂ is located between the Au and Ag NPs. The morphology, composition, and optical properties of the as‐prepared samples are analyzed. For the binary heterostructures, the rate of the reduction reaction increases with decreasing particle size. The catalytic results demonstrate the synergistic effect of Au and Ag in the ternary metal–semiconductor heterostructures, which is beneficial to the catalytic reduction of Nip into Amp. Both the binary and ternary heterostructures exhibit significantly better catalytic performances than the corresponding bare Au and Ag NPs. It is envisaged that the current synthesized strategy will promote further interest in the field of bimetal NP‐based catalysis.     

Spin–orbit stiffness of the spin‐polarized electron gas

In a spin‐polarized electron gas, Coulomb interaction couples the spin and motion degrees of freedom to build propagating spin waves. The spin wave stiffness S_sw quantifies the energy cost to trigger such excitation by perturbing the kinetic energy of the electron gas (i.e. putting it in motion). Here we introduce the concept of spin–orbit stiffness, S_so, as the energy necessary to excite a spin wave with a spin polarization induced by spin–orbit coupling. This quantity governs the Coulombic enhancement of the spin–orbit field acting of the spin wave. First‐principles calculations and electronic Raman scattering experiments carried out on a model spin‐polarized electron gas, embedded in a CdMnTe quantum well, demonstrate that S_so = S_sw. Through optical gating of the structure, we demonstrate the reproducible tuning of S_so by a factor of 3, highlighting the great potential of spin–orbit control of spin waves in view of spintronics applications. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

Strain-dependent electronic and magnetic of Co-doped monolayer of WSe2

We perform first-principles calculation to investigate electronic and magnetic properties of Co-doped WSe₂ monolayer with strains from −10% to 10%. We find that Co can induce magnetic moment about 0.894 μ_B, the Co-doped WSe₂ monolayer is a magnetic semiconductor material without strain. The doped system shows half-metallic properties under tensile strain, and the largest half-metal gap is 0.147 eV at 8% strain. The magnetic moment (0.894 μ_B) increases slightly from 0% to 6%, and jumps into about 3 μ_B at 8% and 10%, which presents high-spin state configurations. When we applied compressive strain, the doped system shows a half-metallic feature at −2% strain, and the magnetic moment jumps into 1.623 μ_B at −4% strain, almost two times as the original moment 0.894 μ_B at 0% strain. The magnetic moment vanishes at −7% strain. The Co-doped WSe₂ can endure strain from −6% to 10%. Strain changes the redistribution of charges and magnetic moment. Our calculation results show that the Co-doped WSe₂ monolayer can transform from magnetic semiconductor to half-metallic material under strain.     

Prediction of Γ-L and L-X crossovers in Ga<Subscript>x</Subscript>Al<Subscript>1-x</Subscript>Sb alloys by empirical pseudopotential method

Using empirical pseudopotential method Γ-L crossover is found for the Ga_0.74Al_0.26Sb. The conduction band minimum is observed to switch at the (0.87, 0, 0) point for Ga_0.51Al_0.49Sb which shifts to the X point for Ga_0.21Al_0.79Sb and remains at X leading finally to indirect band gap in AlSb. Band structure calculations for a large number of alloys are performed and bowing parameters b_X and b_L are proposed for the E_X and E_L respectively. Our findings may serve as directive to select the materials in a range of composition to examine the bowing parameters and thereby effective mass experimentally for the Ga_xAl_1-xSb alloys.