关于多项式系数微分方程复振荡理论的两个结果

本文证明了：如果ａ_ｋ－ｊ（ｊ＝１，…，ｋ）为多项式，ｄｅｇａ_ｋ－ｊ＝ｎ_ｋ－ｊ，存在某个ａ_ｋ－s（１≤ｓ≤ｋ）满足：当１≤ｊ＜ｓ时，ｎ_ｋ－ｊ／ｊ≤ｎ_ｋ－s／ｓ；当ｓ＜ｊ≤ｋ时，ｎ_ｋ－ｊ＜ｎ_ｋ－s－（ｊ－ｓ）．如果Ｆ≠０是整函数且满足σ（Ｆ）＝β＜（ｎ_ｋ－s＋ｓ）／ｓ，那么微分方程ｆ^（ｋ）＋ａ     

An infinite dimensional affine nil algebra with finite Gelfand-Kirillov dimension

The famous 1960's construction of Golod and Shafarevich yields infinite dimensional nil, but not nilpotent, algebras. However, these algebras have exponential growth. Here, we construct an infinite dimensional nil, but not locally nilpotent, algebra which has polynomially bounded growth.

     

The Elimination of Grains and Grain Boundaries in Grain Growth

The topological changes that occur during coarsening of 2D and 3Dcellular structures, such as polycrystals, areinvestigated. Particular attention is given to the elimination ofgrain boundaries and grains with more than the minimum number oftopological elements. A thermodynamic criterion is introduced tofind out which topological transformations are favoured, based on theevaluation of the Gibbs free energy of the initial and finalconfigurations. In general, elimination of grains is possible only ifthe number of their neighbours is below a critical value, which maybe affected by geometry.     

Study on the dispersion characteristic of the plasma-loaded relativistic BWO

The dispersion characteristic of the plasma-loaded relativistic backward wave oscillator has been analyzed. The theoretical model has been established and the numerical calculations accord with the experimental results, which provides some useful suggestions on the designing of slow-wave structure of BWO.     

具有新光学性质的Zn-Zn2SiO4纳米同轴线阵列

采用气相沉积技术在Si衬底上生长了Zn-Zn₂SiO₄芯-壳结构纳米同轴线阵列。根部呈笋状的纳米同轴线,直径约100nm,长度可以超过10μm;同轴线芯直径约50nm、壳层厚约25nm。通过X射线衍射的表征以及能量色散谱的线扫描,确定纳米同轴线的芯为Zn,壳层为Zn₂SiO₄。我们提出了一种新的生长机制,同时也为生长均匀的纳米同轴线提供一种新的技术。观察阴极荧光谱发现,纳米同轴线有三个主要发光带:强度最大的中紫外300nm发光、较弱的可见光区560nm以及红外谱区865nm的发光。对纳米同轴线截面的300nm发光峰观测发现,中紫外发光来源于Zn₂SiO₄壳层。正是这种同轴线的结构,使得其具备特殊的光学性质。     

Monte Carlo simulation of grain growth in polycrystalline materials

Understanding the kinetics of grain growth, under the influence of second phase (such as impurities, voids and bubbles) is fundamental to advances in the control of microstructural evolution. As a precursor to this objective, we have investigated the grain growth kinetics in a polycrystalline material using a standard Q-state Potts’ model under Monte Carlo settings. Based on physical reasoning, new modifications are suggested to circumvent some of the disadvantages in the basic Potts model. The efficacy of these modifications vis-à-vis the basic model is verified. The influence of second phase particles on the impurity loaded grain boundaries is investigated for the study of grain growth kinetics.     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

Improved dust capture methods for crushing plant

The use of compressive crushing equipment such as gyratory crushers within minerals processing plants can potentially generate large quantities of dust. Remedies to this problem include the retrofitting of shrouds, enclosures, local exhaust ventilation (LEV) systems and water suppression systems. The single or combined application of these systems must be optimised to ensure they operate efficiently. It is desirable that the future design planning of such facilities include integrated dust suppression and/or removal systems to ensure material delivery rates are maintained and the welfare of the workforce is protected.