Insights into the Discrepancy between Single Molecule Experiments

Sharp bending as one of the mechanical properties of double-stranded DNA(dsDNA) on the nanoscale is essential for biological functions and processes. Force sensors with optical readout have been designed to measure the forces inside short, strained loops composed of both dsDNA and single-stranded DNA(ssDNA). Recent FRET singlemolecule experiments were carried out based on the same force sensor design, but provided totally contrary results. In the current work, Monte Carlo simulations were performed under three conditions to clarify the discrepancy between the two experiments. The criterion that the work done by the force exerted on dsDNA by ssDNA should be larger than the nearest-neighbor(NN) stacking interaction energy is used to identify the generation of the fork at the junction of dsDNA and ssDNA. When the contour length of dsDNA in the sensor is larger than its critical length, the fork begins to generate at the junction of dsDNA and ssDNA, even with a kink in dsDNA. The forces inferred from simulations under three conditions are consistent with the ones inferred from experiments, including extra large force and can be grouped into two different states, namely, fork states and kink states. The phase diagrams constructed in the phase space of the NN stacking interaction energy and excited energy indicate that the transition between the fork state and kink state is difficult to identify in the phase space with an ultra small or large number of forks, but it can be detected in the phase space with a medium number of forks and kinks.     

堆垛层错和温度对纳米多晶镁变形机理的影响

本文采用分子动力学模拟方法研究了在拉伸载荷下,堆垛层错和温度对纳米多晶镁力学性能的影响,在模拟中,采用嵌入原子势描述镁原子之间的相互作用．计算结果表明：在纳米晶粒中引入堆垛层错能明显增强纳米多晶镁的屈服应力,但堆垛层错对纳米多晶镁杨氏模量的影响很小;温度为300．0K时,孪晶在晶粒交界附近形成,孪晶随着拉伸应变的增加而逐渐生长．当拉伸应变达到0．087时,一种基面与X—Y面成大约35°角且内部包含堆垛层错的新晶粒成核并快速增长．也就是说,孪晶和新晶粒的形成和繁殖是含堆垛层错的纳米多晶镁在300．0K温度下的主要变形机理．模拟结果也显示,当温度为10．0K时,位错的成核和滑移是含堆垛层错的纳米多晶镁拉伸变形的主要形式．     

啁啾脉冲堆积用于光脉冲整形

报道了一种利用100 ps啁啾脉冲堆积产生2．2 ns任意整形脉冲的脉冲整形系统。采用掺Yb~(3 )光纤锁模振荡器得到稳定的锁模光脉冲序列,将该锁模脉冲通过啁啾光纤光栅展宽并通过1 nm带宽的高斯形光谱滤波器滤波,得到标准的100 ps高斯形啁啾脉冲序列,将此脉冲选单经过光纤延迟线组成的32路脉冲堆积器,得到了精度为32 bit的重复频率为1 Hz的2．2 ns任意整形光脉冲。研究了堆积脉冲的特性,分析了宽带啁啾堆积整形脉冲的光谱时间扫描特性对激光驱动惯性约束聚变打靶束匀滑的优化作用。实验测得了该系统输出的2．2 ns整形光脉冲具有小于50 ps的上升沿,与100 ps啁啾脉冲的时间抖动小于4 ps。     

混配配合物中配体间芳环堆砌作用研究（Ⅰ）：[Cu（C10H8O4）（C10H8N…

合成了Ｃｕ（ｂｉｐｙ）」ＢＭＡ「．３Ｈ２Ｏ混配配合物单晶，测定了其晶体结构。该晶体属于正交晶系，空间群为Ｐｂｃａ，晶胞参数：ａ＝１．６５９３（３）ｎｍ，ｂ＝１．４６７３ｎｍ，ｃ＝１．６７４７（３）ｎｍ，Ｚ＝８。Ｒ和Ｒｗ分别为０．０３７和０．０３８。     

New Type of Aromatic π-Systems for Anion Recognition: Strong Anion-π and C−H⋅⋅⋅Anion Interactions Between Halides and Aromatic Ligands in Half-Sandwich Compounds

Half-sandwich compounds of benzene, cyclopentadienyl, pentamethylcyclopentadienyl, and indenyl were studied as a new type of aromatic π-systems for interactions with halide anions. Although uncoordinated benzene forms only C−H⋅⋅⋅anion interactions, and hexafluorobenzene forms only anion-π interactions, aromatic ligands in half-sandwich compounds can form both types of interactions, because their entire electrostatic potential surface is positive. These aromatic ligands can form stronger anion-π interactions than organic aromatic molecules, as a consequence of more pronounced dispersion and induction energy components. Moreover, C−H⋅⋅⋅anion interactions of aromatic ligands are stronger than anion-π interactions, and significantly stronger than C−H⋅⋅⋅anion interactions of benzene. Our study shows that transition-metal coordination can make aromatic moieties suitable for strong interactions with anions, and gives insight into the design of new anion receptors.     

Enhanced Li+ binding energies in alkylbenzene derivatives: the scorpion effect

The gas-phase lithium cation basicities (LCBs; Gibbs free energy of binding) of ethyl-, n-butyl-, and n-heptylbenzene have been measured by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. The structures of the corresponding complexes and their relative stabilities were investigated through the use of B3LYP/6-311G(+)(3df,2p)//B3LYP/6-31G(d) density functional theory calculations. For n-butylbenzene and n-heptylbenzene, the most stable adducts correspond to pi complexes in which the alkyl chain coils toward the aromatic ring to favor its interaction with the metal cation. The extra stabilization provided by the flexible alkyl chain polarized by the charge on Li(+) is named the "scorpion effect". Conversely, these coiled conformations are among the least stable in the neutral system; they are not all stationary points on the potential-energy surface. The formation of complexes with a coiled alkyl chain leads to a significant enhancement of the Li(+) bonding energies (LBEs), which are approximately 20-30 kJ mol(-1) higher than those calculated for alkylbenzene pi complexes in which an uncoiled chain remains distant from the cation and thus minimizes the scorpion effect. This enhancement is less significant when LCBs are concerned, because the scorpion effect is entropically disfavored. There is very good agreement between the experimental Li(+) gas-phase basicities and the calculated values, provided that the statistical distribution of the conformers present in the gas phase is taken into account in this calculation.     

利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

采用金属有机物化学气相淀积技术在r面蓝宝石衬底上制备了a面GaN薄膜,用熔融的KOH在400 ℃对样品分别腐蚀1.0,1.5和2.0 min.用扫描电镜、原子力显微镜、X射线衍射谱和阴极射线荧光对腐蚀前后的表面形貌进行分析.研究表明,400 ℃下腐蚀1.5 min后出现了长平行四边形的条纹状,这是由于无极化的a面GaN表面极性各向异性,c向与m向上N原子悬挂键密度不同,同时稳定性不同,对OH^-离子的吸附能力不同造成的,其中沿c方向易于腐蚀.同时,a面GaN腐蚀后出现了六角突起.我们认为这与穿透位错有关,而其形貌则与GaN薄膜的位错局部极性有关. 关键词： a面GaN')" href="#">a面GaN 堆垛层错 极性     

Binding Energies of the π‐Stacked Anisole Dimer: New Molecular Beam—Laser Spectroscopy Experiments and CCSD(T) Calculations

Among noncovalent interactions, π–π stacking is a very important binding motif governed mainly by London dispersion. Despite its importance, for instance, for the structure of bio‐macromolecules, the direct experimental measurement of binding energies in π–π stacked complexes has been elusive for a long time. Only recently, an experimental value for the binding energy of the anisole dimer was presented, determined by velocity mapping ion imaging in a two‐photon resonant ionisation molecular beam experiment. However, in that paper, a discrepancy was already noted between the obtained experimental value and a theoretical estimate. Here, we present an accurate recalculation of the binding energy based on the combination of the CCSD(T)/CBS interaction energy and a DFT‐D3 vibrational analysis. This proves unambiguously that the previously reported experimental value is too high and a new series of measurements with a different, more sensitive apparatus was performed. The new experimental value of 1800±100 cm^?1 (5.15±0.29 kcal mol^?1) is close to the present theoretical prediction of 5.04±0.40 kcal mol^?1. Additional calculations of the properties of the cationic and excited states involved in the photodissociation of the dimer were used to identify and rationalise the difficulties encountered in the experimental work.     

通过rGO与g-C3N4的π–π堆积作用提高氮化碳光化学氧化能力

石墨相氮化碳(g-C3N4)具有较高的催化活性、良好的生物相容性、廉价易得、低毒性等特点,因而受到了广泛的关注.g-C3N4的禁带宽度为2.7 eV,可被可见光激发,相对于二氧化钛和氧化锌,它对可见光具有更高的太阳光利用率.尽管理论上g-C3N4是类似于石墨烯结构的二维材料,但通常情况下g-C3N4却是层层堆积起来的三维体相结构.从而导致了其比表面积降低,催化反应过程中与反应物接触面积小.同时又使光照下生成的载流子不能迅速传递到材料表面参与反应,大大降低了g-C3N4光生载流子的分离和传递效率.另外,作为一种可见光催化剂,g-C3N4的禁带宽度比一般的无机半导体光催化剂窄,仅能够吸收部分可见光.本文利用原位煅烧法制备了g-C3N4/rGO复合光催化剂,以罗丹明B和2,4-二氯酚为目标探针分子,考察了其可见光催化活性.这对于设计开发其他具有共轭大π键的光催化体系,具有一定的借鉴意义.X射线衍射(XRD),傅里叶变换红外光谱(FTIR),X射线光电子能谱(XPS)和激光共聚焦拉曼光谱(Raman)结果表明,氧化石墨烯成功地被还原为石墨烯,并成功地引入到了g-C3N4中去.在三聚氰胺聚合的过程中,石墨烯被夹杂在氮化碳的片层中间,有利于形成π-π共轭作用.复合光催化剂C3N4/rGO的带边发生明显的红移,在可见光区域内的吸收强度也有所增加,因而有利于其可见光催化活性的提高.通过外推法算得g-C3N4和C3N4/rGO-1复合光催化剂的带隙宽度分别为2.70和2.42 eV.为了更好地考察复合光催化剂C3N4/rGO的能带结构的变化,通过光电化学的手段对其进行进一步的研究.莫特-肖特基结果表明该半导体是n型.计算得出g-C3N4和C3N4/rGO复合光催化剂的平带电势分别为–1.12和–0.85 V对甘汞标准电极,C3N4/rGO复合光催化剂的平带电位发生明显的正移.由此分别确定g-C3N4和C3N4/rGO复合光催化剂的价带底则位于1.58和1.74 V对甘汞标准电极.相比g-C3N4,g-C3N4/rGO复合光催化剂的价带位置的降低意味着其具有更强光氧化的能力,且比表面积的增大也有利于光催化反应.结果发现,石墨烯与g-C3N4的比例为1%时,复合样品的光催化性能最佳,对罗丹明B和2,4-二氯酚的降解性能均有提高.