带Markov状态转换的跳扩散方程的数值解

研究了一类带Markov状态转换的跳扩散方程的数值解的问题,为讨论这类方程精确解的数值计算问题,我们给出了一种基于Euler格式的方程解的跳适应算法,并在一定的条件下,证明了基于这种新的跳适应算法所得到的方程的数值解是收敛于它的精确解,同时还给出了数值解收敛到其精确解的收敛阶数.最后,本文通过两个例子说明了这种跳适应算法的计算有效性.     

具时变时滞和 Markovian转换的不确定奇异随机系统的鲁棒 H_∞ 滤波(英文)

本文处理了一类具与模式有关的时变时滞和 Markovian转换的不确定奇异随机系统的鲁棒H∞滤波问题.所考虑的系统包含参数不确定性,Markovian参数,随机扰动和与模式有关的时变时滞.本文的目的是设计一个滤波器以保证滤波错误系统是正则的、无脉冲的、鲁棒指数均方稳定的和可达到一个给定的 H∞扰动衰减水平.文章首先得到所求鲁棒指数H∞滤波器存在的充分条件,然后给出所求滤波器参数的显示表示.     

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Based on the bipolar resistive switching (RS) characteristics of SnO₂ films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO₂/fluorine-doped tin oxide (FTO). The SnO₂ microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO₂ and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.     

Monitoring cooperative equilibria in a stochastic differential game

This paper deals with a class of equilibria which are based on the use of memory strategies in the context of continuous-time stochastic differential games. In order to get interpretable results, we will focus the study on a stochastic differential game model of the exploitation of one species of fish by two competing fisheries. We explore the possibility of defining a so-called cooperative equilibrium, which will implement a fishing agreement. In order to obtain that equilibrium, one defines a monitoring variable and an associated retaliation scheme. Depending on the value of the monitoring variable, which provides some evidence of a deviation from the agreement, the probability increases that the mode of a game will change from a cooperative to a punitive one. Both the monitoring variable and the parameters of this jump process are design elements of the cooperative equilibrium. A cooperative equilibrium designed in this way is a solution concept for a switching diffusion game. We solve that game using the sufficient conditions for a feedback equilibrium which are given by a set of coupled HJB equations. A numerical analysis, approximating the solution of the HJB equations through an associated Markov game, enables us to show that there exist cooperative equilibria which dominate the classical feedback Nash equilibrium of the original diffusion game model.This research was supported by FNRS-Switzerland, NSERC-Canada, FCAR-Quebec.     

镜面偏心测量光学系统设计及其杂光分析

为了解决现有镜面偏心测量设备存在的问题,本文研究了一种采用切换镜头和调焦相结合的方法来设计的镜面偏心测量光学系统,使用这个光学系统,既能使被测镜面的曲率半径扩展到-∞~+∞范围,又能保证测量精度。通过Lighttools软件对这个光学系统进行光线追迹,分析其杂光分布,结果表明:准直镜头内部多次反射产生的杂光强度很低,可以忽略。而当被测镜头中存在相邻球心像距的镜面时,产生的杂光强度比较大,在后续的图像处理过程中,必须增强目标图像的对比度。利用研制的镜面偏心测量设备进行测量实验,结果进一步验证了杂光分析的正确性。     

电光调制对外部光注入垂直腔表面发射激光器的偏振转换及其非线性动力学行为的操控性研究

针对主和副垂直腔表面发射激光器构成的外部注入激光器系统的偏振转换及其非线性动力学行为, 利用周期性极化铌酸锂晶体中准相位匹配线性电光调制, 本文提出了一种新的操控方案并且探索了其控制规律. 研究结果发现, 受到平行光注入或正交光注入的副激光器输出偏振度随外加电场成周期性振荡变化, 其振荡波峰轨迹包络曲线为正弦曲线, 而振荡波谷轨迹包络曲线为余弦曲线; 选取一定的主激光器偏置电流, 通过对来自主激光器的光进行电光调制, 受到两种方式注入的副激光器可以输出任意偏振模, 并且其非线性动力行为经历不同的演变. 另外, 副激光器的偏振度仅依赖于外加电场, 与副激光器的偏置电流无关.     

谷值电流型脉冲序列控制开关变换器及其能量建模研究

脉冲序列控制是针对工作于电感电流断续导电模式的开关变换器提出的一种非线性、离散控制技术.当开关变换器工作在电感电流连续导电模式时,脉冲序列控制开关变换器存在低频振荡现象,严重影响了脉冲序列控制开关变换器的稳态及瞬态性能.针对这一问题,本文提出一种谷值电流型脉冲序列控制方法,将脉冲序列控制的应用范围从电感电流断续导电模式扩展到电感电流连续导电模式.建立了谷值电流型脉冲序列控制开关变换器的能量迭代模型,并与传统脉冲序列控制开关变换器的能量模型进行对比.结果表明谷值电流型脉冲序列控制电感电流连续导电模式开关变换器具有与传统脉冲序列控制电感电流断续导电模式开关变换器相同的能量传递模式,从而在根本上消除了传统脉冲序列控制电感电流连续导电模式变换器存在的低频振荡现象.     

Density functional theory study on a fluorescent chemosensor device of aza‐crown ether

Three derivatives of alkyl anthracene covalently bonded to aza‐18‐crown‐6 at the nitrogen position, anthracene(CH₂)_n, (n = 1–3) which act as an on–off fluorogenic photoswitch have been theoretically studied using a computational strategy based on density functional theory at B3LYP/6‐31 + G(d,p) method. The fully optimized geometries have been performed with real frequencies which indicate the minima states. The binding energies, enthalpies and Gibbs free energies have been calculated for aza‐18‐crown‐6 ( L ) and their metal complexes. The natural bond orbital analysis is used to explore the interaction of host–guest molecules. The absorption spectra differences between L and their metal ligands, the excitation energies and absorption wavelength for their excited states have been studied by time‐dependent density functional theory with the basis set 6‐31 + G(d,p). These fluorescent sensors and switchers based on photoinduced electron transfer mechanism have been investigated. The PET process from aza‐crown ether to fluorophore can be suppressed or completely blocked by the entry of alkali metal cations into the aza‐crown ether‐based receptor. Such a suppression of the PET process means that fluorescence intensity is enhanced. The binding selectivity studies of the aza‐crown ether part of L indicate that the presence of the alkali metal cations Li⁺, Na⁺ and K⁺ play an important role in determining the internal charge transfer and the fluorescence properties of the complexes. In addition, the solvent effect has been investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Scanning transmission X‐ray microscopy probe for in situ mechanism study of graphene‐oxide‐based resistive random access memory

Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K‐ and O K‐edges, both the RRAM junctions and the I₀ junction were fabricated on a single Si₃N₄ membrane to obtain local XANES spectra at these absorption edges with more delicate I₀ normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.     

Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of ＂I-V curve training＂. The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.