Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating

Thin films of titanium nitride (TiN) were deposited on stainless steel substrates by a modified deposition technique, double-layered shielded arc ion plating with vicarious circular holes (DL-SAIP). The results show that the TiN film with the distance of 10 mm between the double-layered shield plates had the least droplets. The deposition rate of the films prepared with the new technique was more homogeneous than that of all the other shielded arc ion plating. The film/substrate adhesion and microhardness values of the TiN films were higher than 40 N and 18 GPa, respectively. Thus such TiN thin films can be expected in applications.     

Temperature and pressure dependences of EPR spectra of Gd ion doped in the EuAl3(BO3)4 monocrystal

The ground state of Gd³⁺ ions substituting for trivalent europium in the EuAl₃(BO₃)₄ single crystal was studied by electron paramagnetic resonance (EPR) over the temperature range of 300-4.2 K and at pressures up to 9 kbar. The EPR spectra were analysed using the spin Hamiltonian of axial symmetry. The following parameters are reported: g=1.981±0.002, b₂⁰=280.18±0.12, b₄⁰=−12.95±0.08 and b₆⁰=0.61±0.12 (at Т=298 K). The distortions of the nearest environment of Gd³⁺ ion were analysed within the framework of the superposition model of crystal field.     

Arbitrary amplitude dust-acoustic solitary waves in a dusty plasma with flat-topped ion distribution

The properties of arbitrary amplitude dust-acoustic (DA) solitary waves (SWs) in a dusty plasma containing warm adiabatic dust fluid, isothermal electrons and ions following flat-topped velocity distribution is studied by the pseudo-potential approach. The effects of dust temperature and flat-trapped ions are found to significantly modify the basic features of DA-SWs as well modify the parametric regime for the existence of rarefactive solitary waves. The pseudo-potential for small amplitude limit is also analytically analyzed, and the numerical results are found to agree with analytical results.     

2.45 GHz ECR离子源的微波阻抗匹配

ECR离子源的等离子体阻抗对其微波传输与阻抗匹配设计至关重要。在中国科学院近代物理研究所现有的2.45 GHz ECR 质子源上,对等离子体阻抗进行了测量。首先用水吸收负载代替等离子体负载测量得到了所用微波窗阻抗,然后根据质子源测量数据,推算得到了等离子体阻抗。实验结果表明,脊波导输出端阻抗与后续负载不完全匹配,等离子体阻抗随微波功率变化呈非线性。这些结果为ECR离子源过渡匹配和微波窗的设计提供了参考依据。Plasma impedance of an ECR ion source is important for microwave transmission and impedance matching design. Plasma impedance was measured indirectly with the 2.45 GHz ECR proton source at the Institute of Modern Physics, Chinese Academy of Sciences. In the test, we got microwave window mpedance by using water absorption load instead of plasma load, and the source plasma impedance was derived from the test data with the 2.45 GHz ECR proton source and microwave window impedance. The experimental results show that ridge waveguide output impedance and the subsequent load does not exactly match, plasma impedance variation is nonlinear with microwave power. The achievedresult is useful in the design of ridged waveguide and microwave window.     

Spherical Kadomtsev-Petviashvili Solitons in a Suprathermal Complex Plasma

The nonlinear aspects of nonplanar dust acoustic (DA) solitary waves are investigated in an unmagnetized complex plasma comprising of cold dust grains, kappa-distributed ions as well as electrons. The nonplanar DA solitons are studied based on the reductive perturbation technique. It is shown that the evolution of DA solitons is governed by a spherical Kadomtsev-Petviashvili (sKP) equation and then the impact of suprathermality on the spatial structure as well as the nature of DA soliton is studied. It seems that the properties of DA solitons in nonplanar geometry are quite different from that of the planar solitons.     

等离子辅助镀膜技术

传统的电子束蒸发工艺提供了高速率的沉积，但由于成膜分子的能量较低，使沉积的薄膜排列密度很低，其性能和块材料区别很大，已有不少学者发现了很多金属和氧化物薄膜具有典型的柱状结构，薄膜的低排列密度造成了其光学常数和机械性能不如块状材料，近几年发展起来的高功率等离子体辅助镀膜技术解决了上述问题，本文报道了我国自己研制的等离子体源（GIS）的性能指标，用这个源所做的单层TiO2膜的成膜工艺与质量，以及用等离子辅助沉积的减反射膜的工艺。     

Analyse der Rückstoßprodukte in neutronenbestrahlten Phenylarsenverbindungen, 3. Mitteilung: Über die Bestimmung der Ausbeute an Diphenylarsen-Rückstoßprodukten

Für das in der 1. Mitteilung [1] beschriebene Trennverfahren zur Anfarbeitung bestrahlter Mono-, Di- und Triphenylarsenverbindungen sollte die Effektivität der chromatographischen Trennung an dem Kationenaustauscher KPS (6% DVB) mit Hilfe einer unabhängigen Methode überprüft werden. Außerdem sollten Hinweise über Art und Anzahl der nichtidentifizierten ?unbckanntcn Produkte“ erhalten werden, die gemeinsam mit den Diphenylarsen-Rüekstoßprodukten im NaOH-Eluat auftreten. Zu diesem Zweck wurde die von Siuda [2] vorgeschlagene papierelektrophoretische Trennung benutzt.     

Verteilungskoeffizienten von Ag,In, Re,Au, Hg,Tl, Pb und Bi in Salpetersäure-Methanol-Gemischen

Der Anionenaustausch unter Verwendung von Salpetersäure-Methanol-Gemischen ist in den letzten Jahren von einer Anzahl von Autoren untersucht worden [1, 2, 3, 4]. In einer früheren Arbeit hatten wir bereits auf seine praktisehc Anwendbarkeit für die Trennung der SK hingewiescn [5]. In der vorliegenden Arbeit werden von uns die Verteilungs-koeffizienten von Ag, In, Re, Au, Hg, Tl, Pb und Bi angegeben und Beispiele für mögliche Trennungen angeführt.     

Ionenstrahlätzen – Verfahren und Ausrüstungen für die Mikrostrukturierung

Ion beam techniques are widely used jur modification as well us analysis of materials in development and production of VLSI circuits and their importance is continuously increased in course of the reduction of structure dimensions. Some possibilities and problems connected with the application of ion beams of low energy in the pattern transfer are- described and the stage of development achieved in the Central Institute of Isotope and Radiation Research is outlined.     

Conversion Electron Moessbauer Spectroscopie Studies on Ion Implanted Iron Layers

Conversion electron Moessbauer spectroscopy (CEMS) is a method very suitable for the study of ion implanted iron. It is demonstrated on nitrogen and phosphorus implanted iron layers. Using this technique not the 14.4-keV-gamma-rays as in the case of the conventional Moessbauer transmission experiments but the conversion and Auger electrons are detected. These electrons have a maximum energy of 7.3 keV. The Moessbauer signal can be obtained from a surface layer of about 300 nm. But the main fraction of the signal, namely 65%, comes from the first 50 nm. This range is just interesting for ion implantation. Depending on the test conditions different iron nitrides are formed by the nitrogen implantation and the phosphorus implantation can result in both amorphization and compound formation in the implanted layer.