dc-Hydrogen plasma induced defects in bulk n-Ge

Bulk antimony doped germanium (n-Ge) has been exposed to a dc–hydrogen plasma. Capacitance–voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ∼a 1.5 orders of magnitude reduction in the free carrier concentration up to depth of ∼3.2 μm. DLTS and Laplace-DLTS revealed a prominent electron trap 0.30 eV below the conduction (E_C –0.30 eV). The concentration of this trap increased with plasma exposure time. The depth profile for this defect suggested a uniform distribution up to 1.2 μm. Annealing studies show that this trap, attributed to a hydrogen-related complex, is stable up to 200 °C. Hole traps, or vacancy-antimony centers, common in this material after high energy particle irradiation, were not observed after plasma exposure, an indication that this process does not create Frenkel (V–I) pairs.     

钙钛矿/硅叠层太阳电池中平面a-Si:H/c-Si异质结底电池的钝化优化及性能提高

最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能.     

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning

A Si cleaning method has been developed by use of potassium cyanide (KCN) dissolved in methanol. When silicon dioxide (SiO₂)/Si(1 0 0) specimens with 10¹⁴ atom/cm² order copper (Cu) contaminants are immersed in 0.1 M KCN solutions of methanol at 25 °C, the Cu concentration is reduced to below the detection limit of total X-ray fluorescence spectrometer of ∼3 × 10⁹ atoms/cm². X-ray photoelectron spectra show that the thickness of the SiO₂ layers is unchanged after cleaning with the KCN solutions. 10¹⁴ cm⁻² order Cu contaminants on the Si surface can also be removed below ∼3 × 10⁹ atoms/cm², without causing contamination by potassium ions. UV spectra show that Cu-cyano complex ions are formed in the KCN solutions after the cleaning. The main Cu species in the KCN solutions is ions with the concentration of []:[Cu⁺] = 1:1.6 × 10²³. Even when the KCN solutions are contaminated with 64 ppm Cu²⁺ ions in the solutions, which form ions, the cleaning ability does not decrease, showing that ions are not re-adsorbed. The KCN solutions can also passivate defect states such as Si/SiO₂ interface states, leading to the improvement of characteristics of Si devices.     

High‐performance a‐Si1–xOx:H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si1–xOx:H stack buffer layer

We used amorphous silicon oxide (a‐Si_1–xO_x:H) and microcrystalline silicon oxide (µc‐Si_1–xO_x:H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si_1–xO_x:H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si_1–xO_x:H. As a result, a high open‐circuit voltage (V_OC) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% (J_SC = 33.46 mA/cm², V_OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.

     

Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD

Annealing effect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K by MOCVD using ammonia (NH₃) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited the strong deep donor–acceptor pair (D^dAP) emission and the weak I₁^N emission line. In order to enhance the activation of nitrogen in ZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N₂) and hydrogen (H₂) atmosphere. Only the annealing in nitrogen atmosphere increased I₁^N emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentration was estimated to be 3 × 10¹⁷cm⁻³ by C–V measurements. This activation mechanism is interpreted as hydrogen is released from N–H bonds during annealing in nitrogen atmosphere.     

A Titanium‐Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

This study introduces an in situ fabrication of nanoporous hematite with a Ti‐doped SiO_x passivation layer for a high‐performance water‐splitting system. The nanoporous hematite with a Ti‐doped SiO_x layer (Ti‐(SiO_x/np‐Fe₂O₃)) has a photocurrent density of 2.44 mA cm^?2 at 1.23 V_RHE and 3.70 mA cm^?2 at 1.50 V_RHE. When a cobalt phosphate co‐catalyst was applied to Ti‐(SiO_x/np‐Fe₂O₃), the photocurrent density reached 3.19 mA cm^?2 at 1.23 V_RHE with stability, which shows great potential of the use of the Ti‐doped SiO_x layer with a synergistic effect of decreased charge recombination, the increased number of active sites, and the reduced hole‐diffusion pathway from the hematite to the electrolyte.     

Highly Stable CsPbBr3 Nanocrystal Phosphors by Surface Passivation and Encapsulation

The colloidal all-inorganic CsPbX₃(X=I, Br, Cl) perovskite nanocrystals(NCs) with unique optical properties have attracted considerable attention in the field of semiconductor nanocrystals, but their application is hindered by stability issues caused by surface defects and environmental factors. Usually with inert layer encapsulation, the stability of CsPbX₃ NCs can be significantly enhanced. However, due to the loss of highly dynamic oleic acid/oleylamine ligands, it is usually accompanied by a decrease in the photoluminescence quantum yield(PLQY). Herein, we report a facile method for preparing CsPbBr₃ NCs based green phosphors with high stability and bright emission. With modification of colloidal CsPbBr₃ NCs by di-dodecyldimethylammonium bromide and sequent encapsulation in the as-synthesized mesoporous MOF-5, the green emitting phosphors with enhanced stability and a PLQY of 77% were obtained. The phosphors exhibit enhanced resistance against ambient oxygen, UV light, heat treatment and water. These excellent properties show the potential value of our prepared NCs as stable phosphors in light-emitting devices.     

Understanding the enantioselectivity of a heterogeneous catalyst: the influence of ligand loading and of silica passivation

One of the major drawbacks of heterogeneous catalysts is an inferior catalytic performance relative to their homogeneous counterparts. This is often attributed to high local concentration of the catalyst, and in certain cases to various active groups of the heterogeneous support and to its steric effects. We tested the influence of these factors in the case of a silica-grafted bis(oxazoline) catalyst used in the Diels-Alder reaction, by varying the ligand loading and the degrees of passivation of the silica. We show that, in the present case, the enantioselectivity of the catalyst is linearly correlated with the passivation of the silica, and high ligand loadings can be used without damaging the performance of the catalyst. This is, to the best of our knowledge, the first example of a correlation between silica passivation and the enantioselectivity of a heterogeneous catalyst.     

Mo,W电极在MgCl2-KCl-NaCl-CaCl2熔盐中电解镁的钝化行为

应用循环伏安法和计时电流法研究了Mg(Ⅱ)在MgCl2-KCl-NaCl-CaCl2四元熔盐体系中于(Mo、W)阴极上的放电过程及其钝化行为.结果表明,W电极放电反应的可逆性比Mo电极的好.后者的计时电流曲线偏离线性特征,且其阴极钝化比W严重.