Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface

In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes(LDs) by means of H2S plasma passivation technology,H2S plasma passivation treatment is performed on the GaAs(110) surface.The optimum passivation conditions obtained are 60-W radio frequency(RF)power and 20-min duration.So the laser cavity surfaces axe treated under the optimum passivation conditions.Consequently,compared with unpassivated lasers with only AR/HR-coatings,the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%,which is almost the same as that of (NH4)2Sx treatment.And the life-test experiment has demonstrated that this passivation method is more stable than(NH4)2Sx solution wet-passivated treatment.     

Study of molecular surface coating on the stability of maghemite nanoparticles

In this study γ-Fe₂O₃ nanoparticle, surface-coated with increasing amount of oleic acid, have been prepared while the stability against particle degradation under laser excitation intensity was investigated. Maghemite nanoparticle was obtained via oxidation of magnetite nanoparticle, the latter synthesized by co-precipitation of Fe (II) and Fe (III) ions in alkaline medium. By varying the experimental conditions of surface-coating maghemite nanoparticles with oleic acid, samples with different grafting coefficient were obtained and investigated using X-ray diffraction and different spectroscopic techniques, namely Raman, Mössbauer, and infrared. The amount of oleic acid adsorbed on the maghemite surface was estimated via the carbon content obtained from elemental analysis.     

Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates

Passivation treatment on indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg_0.8Cd_0.2Te layers. Room-temperature capacitance–voltage measurements clearly revealed metal-insulator–semiconductor (MIS) behavior for the Al/ZnS/passivated Hg_0.8Cd_0.2Te layer/Cd_0.96Zn_0.04Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te diode with a sulfur-treated Hg_0.8Cd_0.2Te layer were smaller than those with a chemically oxidized Hg_0.8Cd_0.2Te layer. The interface state density at the ZnS/sulfur-treated Hg_0.8Cd_0.2Te interface were low at 10¹¹ eV⁻¹ cm⁻² at the middle of the Hg_0.8Cd_0.2Te energy gap. These results indicate that the Hg_0.8Cd_0.2Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg_0.8Cd_0.2Te layers can be used for Hg_1−xCd_xTe-based MIS diodes and MIS field-effect transistors.     

Modification of Electrical Activity of Grain Boundaries in EFG Silicon Under Influence of Hydrogen Plasma

We investigated an influence of hydrogen plasma treatment on electrical properties of shaped silicon polycrystals. Hydrogen penetration into polycrystalline silicon is demonstrated to depend on the state of the crystal (as-grown or annealed) and type of grain boundary (general or weakly deviated from special orientations). It is found that interaction of atomic hydrogen with grain boundaries can result not only in decrease of their electrical activity, but also in increase of potential barrier height at relatively high (more than 2 × 10¹⁸ cm^–2) doses of incorporated hydrogen. This phenomenon is explained by a phenomenological model which takes into account passivation of grain boundary dangling bonds and boron atoms in the bulk as two main mechanisms controlling hydrogenation effect.     

Three generations of inorganic phosphates in solvent and water-borne paints: A synergism case

This research work is intended to compare the anti-corrosive properties of three generations of inorganic phosphate pigments in solvent-based paints and in water-borne ones, both of the epoxy type. The anti-corrosive properties of phosphate pigments were assessed by means of electrochemical techniques (corrosion potential measurements, polarisation tests, etc.), employing a steel electrode dipped into pigments suspensions. The behaviour of these pigments in anti-corrosive paints, formulated with different binders, have been studied by accelerated (salt spray cabinet and humidity chamber) and electrochemical tests (corrosion potential and ionic resistance measurements).Accelerated and electrochemical tests allowed to differentiate the anti-corrosive performance of the three phosphates studied in this research. These test are also able to detect and characterise possible synergism between the water-borne resin and the pigments.     

Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer

In blue quantum dot light emitting diodes (QLEDs), electron injection is insufficient, which would degrade device efficiency and stability. Herein, we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively. Moreover, it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel. As a result, the maximum external quantum efficiency of blue QLED was increased from 2.55% to 4.60%, and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device. Our work indicates that election injection plays an important role in blue QLED efficiency and stability.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E_C—0.33 eV, E_C—0.36 eV, E_C—0.38 eV and E_C—0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E_C—0.58 eV. Isochronal annealing of the passivated material between 50 and 300 °C, revealed the emergence of a secondary defect, not previously observed, at E_C—0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 °C, as all the defects originally observed in the reference sample were recovered.     

What we have learned from studies on chemical properties of amorphous alloys?

Amorphous alloys have many attractive characteristics including extremely high corrosion resistance if the sufficient amounts of corrosion-resistant elements are added. The superiority of amorphous alloys is based on the homogeneous single phase nature without any chemical and physical heterogeneities. Although there are processing limitations to avoid the formation of heterogeneous crystalline structure in addition to no welding technology without crystallization, the application of corrosion-resistant amorphous alloys is expected particularly to the very aggressive environments, where any conventional crystalline metallic materials cannot be used. Some amorphous bulk alloys showed zero corrosion mass loss due to spontaneous passivation even in 12 M HCl. Production of amorphous bulk alloys became possible for selected compositions. The homogeneous single phase nature is also effective to form useful catalysts with unique composition and structure. An example of catalysts is for carbon dioxide methanation useful for supply of renewable energy in the form of methane.