首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   16219篇
  免费   3160篇
  国内免费   1773篇
化学   14136篇
晶体学   852篇
力学   298篇
综合类   90篇
数学   389篇
物理学   5387篇
  2024年   54篇
  2023年   181篇
  2022年   611篇
  2021年   689篇
  2020年   1090篇
  2019年   791篇
  2018年   670篇
  2017年   660篇
  2016年   1029篇
  2015年   918篇
  2014年   1018篇
  2013年   1763篇
  2012年   997篇
  2011年   1004篇
  2010年   829篇
  2009年   880篇
  2008年   794篇
  2007年   864篇
  2006年   755篇
  2005年   658篇
  2004年   607篇
  2003年   568篇
  2002年   1005篇
  2001年   392篇
  2000年   331篇
  1999年   290篇
  1998年   279篇
  1997年   215篇
  1996年   218篇
  1995年   151篇
  1994年   129篇
  1993年   86篇
  1992年   101篇
  1991年   77篇
  1990年   85篇
  1989年   53篇
  1988年   45篇
  1987年   34篇
  1986年   40篇
  1985年   27篇
  1984年   37篇
  1983年   17篇
  1982年   24篇
  1981年   17篇
  1980年   10篇
  1979年   16篇
  1978年   8篇
  1977年   9篇
  1975年   10篇
  1973年   10篇
排序方式: 共有10000条查询结果,搜索用时 218 毫秒
71.
We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E c ). From these results, it is suggested that the PEN-FET becomes a memory device.  相似文献   
72.
Optical, structural and morphological properties of thin films of polyparaphenylenevinylene (PPV) formed by an alkyl sulfinyl precursor route have been studied. Thin films were fabricated on an optical glass and on quartz glass either by spin-coating of the precursor solution or by layer-by-layer deposition using Langmuir–Blodgett technique. PPV precursor films were also spin-coated on gold-coated glass in order to study thin-film optical parameters by surface plasmon spectroscopy. We have been successful in forming about 40 precursor mono layers on quartz glass by Langmuir–Blodgett technique using optimized surface pressure and dipping conditions. After thermal conversion of the precursor layers good quality fluorescent PPV films of yellow colour have been obtained. Optical characterization of the films was carried out by linear absorption and emission spectroscopy, ellipsometry, and surface plasmon spectroscopy. Structural and morphological studies on the thin films were carried out by using X-ray scattering and atomic force microscopy. Wave-guided travelling-wave laser action has been achieved in a PPV film on quartz glass. The sample was transversally pumped with picosecond laser pulses (wavelength 347.15 nm, duration 35 ps). Laser emission occurred at 550 nm for pump pulse energy densities above .  相似文献   
73.
Imaging of latent fingerprints using time-resolved (TR) method offers a broader platform to eliminate the unwanted background emission. In this paper, a novel TR imaging technique is demonstrated and implemented, which facilitates the detection of latent fingerprints with nanosecond resolution. Simulated experiments were carried out with two overlapping fingerprints treated with two fluorescent powders having different lifetimes in nanosecond range. The dependence of the fluorescence emission intensity in nanosecond resolution of TR imaging is also revealed.  相似文献   
74.
Tunable microlens arrays using polymer network liquid crystal   总被引:1,自引:0,他引:1  
A tunable-focus microlens array based on polymer network liquid crystal (PNLC) is demonstrated. The PNLC was prepared using an ultraviolet (UV) light exposure through a patterned photomask. The photocurable monomer in each of the UV exposed spot forms an inhomogeneous centro-symmetrical polymer network which acts as a lens when a homogeneous electric field is applied to the cell. The focal length of the microlens arrays is tunable with the applied voltage.  相似文献   
75.
Summary. Three component condensation of alkylacetoacetates, primary amines, and alkyl cyanoacetates catalyzed by solid supports under microwave irradiation gave N-alkyl 3-cyano-6-hydroxy-2(1H)-pyridinones with high yields. Upon carrying out the reaction under the same condition on acidic alumina, zeolite HY, silica gel, and montmorillonite K-10, the best yields were achieved by silica gel. Corresponding author. E-mail: balalaie@yahoo.com Received August 28, 2002; accepted September 3, 2002  相似文献   
76.
单粒子势模型下价核子的密度分布   总被引:3,自引:0,他引:3       下载免费PDF全文
依据实验事实,利用单粒子势模型,计算了一些核态外层价核子的密度分布.计算给出了价核子在核外部分布的概率和贡献,以此作为晕核态的判断标准.通过研究均方根半径随结合能变化的规律,指出了晕核态存在的条件,尤其是质子晕核态存在的条件.这些对判断和寻找晕核态有现实的指导意义. 关键词: 单粒子势模型 价核子 密度分布 中子晕核态 质子晕核态  相似文献   
77.
78.
单光子探测器量子效率的绝对自身标定方法   总被引:6,自引:0,他引:6       下载免费PDF全文
常君 《物理学报》2003,52(5):1132-1136
提出一种单光子探测器量子效率的绝对自身标定方案,利用光参量下转换过程中产生的光子对在时间上的相关性,先将参量光束分为两路,然后引入相对延时,使同时产生的孪生光子先后进入单光子探测器,然后将探测器之后的电路分为三路,其中一路直接进入计数器得到探测器所探测到的光子的总计数率,另两路用电路方法引入和光路相当的相对延时,经符合电路后进入计数器,得到前后到达探测器的光子对之间的符合计数率.这样,从符合计数率与总光子计数率之比即可在不需要任何其他探测器或者参照标准的情况下获得探测器的量子效率.文中给出两种方案,分别适  相似文献   
79.
80.
The present paper reports the dislocation unpinning model of acoustic emission (AE) from alkali halide crystals. Equations are derived for the strain dependence of the transient AE pulse rate, peak value of the AE pulse rate and the total number of AE pulse emitted. It is found that the AE pulse rate should be maximum for a particular strain of the crystals. The peak value of the AE pulse rate should depend on the volume and strain rate of the crystals, and also on the pinning time of dislocations. Since the pinning time of dislocations decreases with increasing strain rate, the AE pulse rate should be weakly dependent on the strain rate of the crystals. The total number of AE should increase linearly with deformation and then it should attain a saturation value for the large deformation. By measuring the strain dependence of the AE pulse rate at a fixed strain rate, the time constantτ s for surface annihilation of dislocations and the pinning timeτ p of the dislocations can be determined. A good agreement is found between the theoretical and experimental results related to the AE from alkali halide crystals.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号