Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

<正>Deposition patterns of tetracyanoquinodimethane(TCNQ) molecules on different surfaces are investigated by atomic force microscopy.A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system,we investigate TCNQ thin film growth on both SiO_2 and mica surfaces.It is found that dense island patterns form at a high deposition rate,and a unique seahorse-like pattern forms at a low deposition rate.Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction.Finally,a phenomenal "two-branch" model is proposed to simulate the growth process of the seahorse pattern.     

Control of device performances of phosphorescent white organic light-emitting diodes by managing charge transport properties of host materials

Interlayer-free phosphorescent white organic light-emitting diodes (PHWOLEDs) with a mixed-host emitting structure in red emitting layer were developed and device performances were investigated according to the host composition in the red emitting layer. Device performances could be effectively managed by a simple change of host materials in the red emitting layer. A high quantum efficiency was obtained in PHWOLEDs with electron transport-type host in the red emitting layer and red emission was strong in PHWOLEDs with mixed-host in the red emitting layer. In addition, stable color performances were obtained in electron transport-type host rich devices.     

有机半导体的物理掺杂理论

基于最低未被占据分子轨道（LUMO）和最高被占据分子轨道（HOMO）的高斯态密度分布与载流子在允许量子态中的费米-狄拉克（Fermi-Dirac）分布,提出有机半导体中物理掺杂的理论模型;研究了掺杂浓度、温度和禁带宽度对载流子浓度的影响,并与一些报道的实验结果做了比较.研究发现无论是否掺杂,温度升高时,有机半导体中的载流子浓度都会增大,并且随温度倒数的线性减小而指数增大;对于本征有机半导体,载流子浓度随禁带宽度的增大而指数下降,随高斯分布宽度的平方指数增加;对杂质和主体不同能级关系的掺杂情形下掺杂浓度对载 关键词： 有机半导体 掺杂 高斯态密度 载流子浓度     

Electronic properties close to Dirac cone in two-dimensional organic conductor α-(BEDT-TTF)<Subscript>2</Subscript>I<Subscript>3</Subscript>

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, α-(BEDT-TTF)₂I₃ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the Dirac point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Dirac point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.     

Study of top and bottom contact resistance in one organic field-effect transistor

This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.     

Thermodynamic description of the viscosity of liquid solder alloys with minor Co impurities

Because of the increasing complexity and cost of experiments carried out, the data for the multi-component alloy systems have frequently been obtained by numerical modelling. It is clear that the related calculations require reliable data dealing with the pure components and binary alloy systems. Selecting the reliable data concerning the pure components from the literature, the viscosities for the SAC and (SAC)_1?x Co_x solder alloys have been calculated using different viscosity models (geometric and physical). The viscosity decreases as the amount of tin content increases in the SAC387 alloy while the addition of the cobalt to SAC387 solder results in the increasing of the viscosity. Moreover, by computing the root mean square values between theoretical and experimental viscosities, it can be concluded that the lowest value among all models is that of obtained by Kaptay equation.     

发动机润滑油品质的可见-近红外光谱快速检测

研究了基于可见-近红外光谱技术的发动机润滑油品质的快速检测方法,包括粘度与含水率的预测。在获取可见-近红外光谱信息的基础上,采用广义回归神经网络分别建立了粘度与含水率的预测模型。预测集样本的确定系数分别达到了0.9818和0.9999。说明可见-近红外光谱技术能够用于发动机润滑油的含水率与粘度的预测。     

Sparse non-negative matrix factorizations for ultrasound factor analysis

Factor analysis is a powerful tool used for the analysis of dynamic studies. One of the major drawbacks of Factor Analysis of Dynamic Structures (FADS) is that the solution is not mathematically unique when only non-negativity constraints are used to determine factors and factor coefficients. In this paper, we introduce a novel method to correct FADS solutions by constructing and minimizing a new objective function. The method is improved from non-negative matrix factorizations (NMFs) algorithm by adding a sparse constraint that penalizes multiple components in the images of the factor coefficients. The technique is tested on computer simulations, and a patient ultrasound liver study. The results show that the method works well in comparison to the truth in computer simulations and to region of interest (ROI) measurements in the experimental studies.     

Air stability of PTCDI‐C13‐based n‐OFETs on polymer interfacial layers

This Letter reports the novel use of poly(9‐vinylcarbazole) (PVK) as a dielectric interfacial layer for n‐type organic field‐effect transistors (n‐OFETs). With PVK, both the air stability and electron mobility of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OFETs were improved. Among the PVKs with different weight‐average molecular weight (M_w), PVK with high M_w showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm²/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI‐C13‐based n‐OFET for air‐exposure and caused a decrease in the threshold voltage shift.

     

Risk-averse stochastic optimal control: An efficiently computable statistical upper bound

In this paper, we discuss an application of the Stochastic Dual Dynamic Programming (SDDP) type algorithm to nested risk-averse formulations of Stochastic Optimal Control (SOC) problems. We propose a construction of a statistical upper bound for the optimal value of risk-averse SOC problems. This outlines an approach to a solution of a long standing problem in that area of research. The bound holds for a large class of convex and monotone conditional risk mappings. Finally, we show the validity of the statistical upper bound to solve a real-life stochastic hydro-thermal planning problem.