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41.
Hong-Yong Mao 《中国物理 B》2021,30(8):84302-084302
The topological valley transport, realized in phononic crystals, has aroused tremendous interest in these years. Many previous researches have further promoted the development of this transport phenomenon. Crucially, the bandwidth of the valley-projected edge mode has been an essential research topic. As is well known, the broadband will improve the adaptability of the acoustic edge-states, which will be more conducive to the transmission of information. Therefore, in this paper, we present a composite structure, composed of the atoms with different shapes forming a hexagonal lattice, which can achieve larger bandwidth than a single structure. Meanwhile, the results demonstrate that the topological protected edge states are also observed in our structure. Furthermore, the backscattering suppressions from associated valley-protected edge states under certain perturbations have also been investigated and demonstrated. Our work can provide a new idea for designing acoustic devices based on valley degree of freedom.  相似文献   
42.
Ultra‐thin thermally grown SiO2 and atomic‐layer‐deposited (ALD) Al2O3 films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J0_cont and contact resistivity ρc is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al2O3 thickness of ~22 Å produces a J0_cont of ~300 fAcm–2 whilst maintaining a ρc lower than 1 mΩ cm2 for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO2 fails to achieve equivalently low J0_cont values but exhibits greater thermal stability, resulting in slight improvements in ρc when annealed for 10 minutes at 300 °C without significant changes in J0_cont. The after‐anneal J0_cont reaches ~600 fAcm–2 with a ρc of ~2.5 mΩ cm2 for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
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One-dimensional (1D) fiber structures of simple amphiphilic molecules were prepared through a facile precipitation route. The self-assembly process was studied by ultraviolet-visible absorption and Fourier transform infrared) spectroscopy, which indicated that hydrogen bonding interactions played a role in the1D growth along the axis of the fiber. The water content, self-assembling temperature, and concentration of 1,5-bis-(1-(pyridin-2-yl)ethylidene)thiocarbonohydrazide molecules in the solution had obvious effects on the size and morphology of the self-assembled products. The formation of1D superstructures is not only of a hot subject in the process of nanoscience but also opens a new venue for conveniently controlling self-assembled structures of similar organic molecules.  相似文献   
45.
Diamond anvil cells (DAC) provide the highest static pressures ≥1?Mbar. Because of the low intensity of neutron sources, for a long time it was thought impossible to use DAC or other anvil cells in neutron experiments. We describe pressure cells with diamond and sapphire anvils and neutron instrumentation allowing neutron diffraction experiments to be carried out under pressures as high as 50?GPa, temperatures down to 0.1?K, and applied magnetic fields up to 7.5?T.  相似文献   
46.
The spin-Hamiltonian (SH) parameters (g factors g||, g and hyperfine structure constants A||, A) and d–d transitions for ZnCdO:Cu2+ are calculated based on the perturbation formulas for a 3d9 ion in tetragonally elongated octahedra. Good agreement between the calculated results (four SH parameters and three optical absorption bands) and the experimental results can be obtained. Since the SH parameters are sensitive to the local structure of a paramagnetic impurity center, the tetragonal distortion (characterized by the relative elongation ratio ρ ≈ 3.5% along the C4 axis) of the impurity center due to the Jahn–Teller effect is also acquired from the calculations. The negative and positive signs of hyperfine structure constants A|| and A for ZnCdO:Cu2+, respectively, are also suggested in the discussions.  相似文献   
47.
The electron paramagnetic resonance (EPR) parameters (the anisotropic g factors, the hyperfine structure parameters and the quadrupole coupling constant Q) and local structure for Cu2+ in BeO are theoretically investigated from the perturbation formulas of these parameters for a 3d9 ion under trigonally distorted tetrahedra. The ligand orbital and spin-orbit coupling contributions are included in the basis of the cluster approach, in view of the strong covalency of the [CuO4]6? cluster. From the calculations, the impurity Cu2+ is suggested not to occupy exactly the ideal Be2+ site but to suffer a slight inward displacement (≈0.024 Å) toward the ligand triangle along the C3 axis. The theoretical EPR parameters show good agreement with the experimental data.  相似文献   
48.
W.C. Zheng  L. He  Y. Mei 《哲学杂志》2013,93(9):789-796
The spin-Hamiltonian (SH) parameters (g factors g //, g ⊥ and hyperfine structure constants 63 A //, 63 A ⊥, 65 A //, 65 A ⊥) for Cu2+ ions in the trigonally-distorted tetrahedral sites of ZnO and GaN crystals are calculated from a complete diagonalization (of energy matrix) method (CDM) based on a two spin-orbit parameter model for d 9 ions in trigonal symmetry. In the method, the Zeeman and hyperfine interaction terms are added to the Hamiltonian in the conventional CDM. The calculated results are in good agreement with the experimental values. The calculated SH parameters are also compared with those using the traditional diagonalization method or perturbation method only within the 2 T 2 term. It appears that, for exact calculations of SH parameters of d 9 ions in trigonal tetrahedral clusters in crystals, the present CDM is preferable to the traditional diagonalization method or perturbation method within the 2 T 2 term. The local structures of Cu2+ centers (which differ from the corresponding structure in the host crystal) in ZnO : Cu2+ and GaN : Cu2+ are obtained from the calculations. The results are discussed.  相似文献   
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