A short walk through quantum optomechanics

This paper gives a brief review of the basic physics of quantum optomechanics and provides an overview of some of its recent developments and current areas of focus. It first outlines the basic theory of cavity optomechanical cooling and gives a brief status report of the experimental state‐of‐the‐art. It then turns to the deep quantum regime of operation of optomechanical oscillators and covers selected aspects of quantum state preparation, control and characterization, including mechanical squeezing and pulsed optomechanics. This is followed by a discussion of the “bottom‐up” approach that exploits ultracold atomic samples instead of nanoscale systems. It concludes with an outlook that concentrates largely on the functionalization of quantum optomechanical systems and their promise in metrology applications.     

The influence of implanted xenon on the sputtering yield of silicon

Following implantation labeling with either 200 or 270 keV Xe⁺ the sputtering yield of silicon bombarded with 20 keV Xe⁺ has been determined in situ by means of the backscattering technique (Y = 3.0 ± 0.3 (atoms/ion)). Yield enhancement by up to 60% was observed in cases where the implantation-induced xenon concentrations exceeded the saturation concentration during sputtering. The effect is attributed to (i) an increase in energy deposition at the surface introduced by pronounced xenon loading of the target and (ii) lowering of the surface binding energy. As a consequence the energy dependence of the xenon sputtering yield of silicon is expected to be strongly affected by the energy dependence of the xenon saturation concentration in silicon. Available experimental data support this idea.     

GaN基蓝绿光LED电应力老化分析

对InGaN/GaN多量子阱蓝光和绿光LED进行了室温20,40,60 mA加速电流下的电应力老化研究,发现蓝光与绿光样品经过60 mA电流老化424 h后,其电学性能表现出一定的共性与差异性:在小测量电流下,绿光样品的光衰减幅度较蓝光样品大~9%;而在较大测量电流 (20 mA)下,两者的光衰减幅度基本相同 (18%)。同时,蓝绿光样品的正向电学性能随老化时间的变化幅度基本一致,反映出它们具有相似的退化机制,绿光样品老化后增多的缺陷大部分体现为简单的漏电行为,而并非贡献于非辐射复合中心。在此基础上对GaN基外延结构进行了优化,优化后的LED长期老化的光衰减幅度较参考样品降低了3%。     

Radiation Effects on Optical Properties of Ethylene Vinyl Acetate Copolymer Films

The optical properties of ethylene vinyl acetate (EVA) film have been studied. The effects of gamma irradiations on the optical spectrum of EVA films have been investigated using spectrophotometric measurements of reflectance and transmittance in the wavelength range 200–1100 nm. The absorption spectra were recorded in the UV–vis region for the unirradiated and irradiated films (from 0 to 50 kGy). Optical constants such as refractive index (n), extinction coefficient (K), and complex dielectric constant have been determined, as well as the optical dispersion parameters and high frequency dielectric constants. A large dependence of the fundamental optical constants on the irradiation dose was noticed. On irradiation, a higher refractive index was obtained as compared with that for unirradiated film. The dispersion parameters, such as E ₀ (single‐oscillator energy), E _d (dispersive energy), and M _?1 and M _?3 (moments), are discussed in terms of the single‐oscillator Wemple–DiDomenico model.     

Copper (50 MeV) and Oxygen (84 MeV) Ion Irradiation Probed Thermal,Structural and Optical Behavior of Polyethylene Terephthalate

Polyethylene terephthalate (PET) films of 50?μm thickness were exposed to swift-heavy 50?MeV copper and 84?MeV oxygen ions, with fluence varying from 1?×?10¹¹ to 1?×?10¹³ ions cm^?2. Differential scanning calorimetry (DSC), X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) and UV-visible spectroscopic techniques were used to characterize the irradiated samples. The XRD and DSC analysis indicated the loss of crystallinity during/after the irradiation. The FTIR spectra revealed the formation of alkyne end groups, C═C groups and structural deformation with increase of ion fluence. Considerable reduction in the value of the optical bandgap was inferred from the study of the UV-visible absorption curves.     

Optical Analysis of Er3+:Boro-Fluoro-Phosphate Glasses

This paper deals with the preparation and optical analysis of Er³⁺ (0.2 mol%) boro-fluoro-phosphate glasses in the following glass compositions:

• Series A: 69.8 B₂O₃–10 P₂O₅–10(ZnO/CdO/TeO₂)–10 AlF₃

• Series B: 69.8 B₂O₃–10 P₂O₅–10(ZnO/CdO/TeO₂)–10 LiF

Measured Vis-NIR absorption spectra of Er³⁺:boro-fluoro-phosphate glasses have revealed nine absorption bands at 377 nm, 405 nm, 450 nm, 486 nm, 519 nm, 543 nm, 649 nm, 973 nm and 1529 nm, which correspond with the transitions of ⁴I_15/2 → ⁴G_11/2, (²G_9/2,⁴H_9/2), ⁴F_5/2, ⁴F_7/2, ²H_11/2, ⁴S_3/2, ⁴F_9/2, ⁴I_11/2, and ⁴I_13/2, respectively. With an excitation at λ _exci = 375 nm, a bright green emission (⁴S_3/2 → ⁴I_15/2) at 547 nm has been observed from these erbium glasses. Judd–Ofelt characteristic intensity Ω_λ (λ = 2, 4, 6) parameters are obtained from the absorption spectra, and these results were used to compute the radiative properties of Er³⁺:boro-fluoro-phosphate glasses. The NIR emission (⁴I_13/2 → ⁴I_15/2) at 1547 nm from these glasses was measured with an Ar⁺ laser (514.5 nm) as an excitation source.     

Spectral,electron microscopic and chemical investigations of gamma-induced purple color zonings in amethyst crystals from the Dursunbey-Balıkesir region of Turkey

Amethyst crystals on matrix specimens from the Dursunbey-Bal?kesir region in Turkey have five representative purple color zonings: dark purple, light purple, lilac, orchid, and violet. The purple color zonings have been analyzed with optical absorption spectra in the visible wavelength region, chemical full trace element analyses (inductively coupled plasma-atomic emission spectroscopy and inductively coupled plasma-mass spectroscopy), and scanning electron microscopic images with high magnification. It can be proposed that the production of the purple color in amethyst crystals is due to three dominant absorption bands centered at 375, 530, and 675 nm, respectively. In addition, the purple color zonings are also due to four minor absorption bands centered at 435, 480, 620, and 760 nm. X-ray diffraction graphics of the investigated amethyst crystals indicate that these crystals are composed of a nearly pure alpha-quartz phase and do not include any moganite silica phase and/or other mineral implications. Trace element analyses of the amethyst crystals show five representative purple color zonings, suggesting that the absorption bands can be mainly attributed to extrinsic defects (chemical impurities). However, another important factor that influences all structural defects in amethyst is likely to be the gamma irradiation that exists during amethyst crystallization and its inclusion in host materials. This gamma irradiation originates from the large underlying intrusive granitoid body in the region of amethyst formation. Irradiation modifies the valence values of the impurity elements in the amethyst crystals. It is observed that the violet-colored amethyst crystals have the most stable and the least reversible coloration when exposed to strong light sources. This situation can be related to the higher impurity content of Fe (2.50 ppm), Co (3.1 ppm), Ni (38 ppm), Cu (17.9 ppm), Zn (10 ppm), Zr (3.9 ppm), and Mo (21.8 ppm).     

Studies on defect formation in femtosecond laser-irradiated PMMA and PDMS

We report here our results on the spectroscopic and elemental analysis of femtosecond (fs) laser-modified regions in polymers of polymethylmethacrylate (PMMA) and polydimethylsiloxane (PDMS) in the context of defect formation and emission in the visible region. Different physical and chemical models are used to explain the changes in modified regions. We found that the emission intensity, recorded from the fs-modified regions of polymers, decreased over time to a constant value. We also demonstrate that these materials are suitable for the preparation of the microstructures en route for light guiding applications. The fs laser-irradiated regions exhibited paramagnetic behavior as was confirmed from electron spin resonance studies through the formation of peroxide-type free radicals. Raman mapping was performed in the modified regions which consisted of defects and found that the modulations in intensity are predominant in the central portion of the structure compared to edges. Elemental analysis has been performed in the modified regions using field emission scanning electron microscope instrument and energy-dispersive X-ray absorption spectroscopy to estimate the percentage contents of individual elements which resulted in defect formation such as paramagnetic and optical centers.     

Theoretical explanation of optical absorption spectra and covalent effect of Ni2+ ions in octahedral sites of Ca3Sc2Ge3O12 crystal

The optical absorption spectra (d-d transition bands) and covalent effect of Ni²⁺ ions in octahedral sites of Ca₃Sc₂Ge₃O₁₂ crystal have been investigated by the full energy matrix based on the two spin–orbit coupling parameters model. The bond length of octahedral site is R_i?=?2.19 Å, which can be determined by the cubic crystal-field parameter and optical spectral data. The lattice distortion of the Ni²⁺ center in Ca₃Sc₂Ge₃O₁₂ crystal is also obtained from the calculations. In addition, the result has shown that the covalent effect of Ni²⁺ ion in the octahedral site of Ga₃Sc₂Ge₃O₁₂ is obvious and cannot be ignored. The calculated d-d transition bands agree well with that of the experimental findings, suggesting that the present methods can explain reasonably the optical spectral data and covalent effect of 3d⁸ ions in octahedral lattices.     

Color centers in irradiated MgF2

Abstract

Color centers in rutile-structured MgF₂ single crystals irradiated at 20K/360K by reactor neutrons are investigated spectroscopically at LNT. Four different types of the F-F vacancy bond in MgF₂ are possibly identified to the observed absorption bands as due to the F₂ centers; instead of previous assignments, the 300nm band to the F₂(D_2h), the 325nm band to the F₂(C₁), the 355nm band to the F₂(C_2v), and the 400nm band to the F₂(C_2h) centers.