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91.
Two different types of plasticized poly(vinyl chloride) (PVC) used for biomedical disposable devices—extruded and injection moulded—were studied in the non‐sterilized condition and after 25 and 50 kGy of beta irradiation. The polymer surfaces were analysed by scanning electron microscopy (SEM) equipped with an x‐ray energy‐dispersive spectroscopy (XEDS) and by atomic force microscopy (AFM). The inner surface of two parts of a venous line showed a different morphology according to their original formulation (for extrusion or injection moulding process) and reacted differently on sterilization with beta irradiation. Moulded parts were affected only slightly by the radiation step, whereas the variations were bigger for the extruded parts. In order to gain the best performances for the medical devices studied, the utmost care must be taken in the sterilization step, which should be optimized as well as the other steps of the manufacturing process. Copyright © 2003 John Wiley & Sons, Ltd.  相似文献   
92.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.  相似文献   
93.
The study of the angular distribution of slow particles during high energy hadron-nucleus interaction indicates that emission of slow particles takes place from a thermally non-equilibrated system. This evidence has come out from the presence of intermittency - a phenomenon that reveals a fractal structure and represents a self-similarity in the particle production process. Hence, this study highlights inadequacy of cascade-evaporation model and advocates the need of its refinement.  相似文献   
94.
We report on the effect of commercially important polysaccharides (maltodextrins with variable dextrose equivalent (Paselli SA-2, MD-6 and MD-10) on the surface activity at the air–water interface of small-molecule surfactants (sms), possessing different hydrophobic–lipophilic balance ((SSL (Na+), the main component is a sodium salt of stearol–lactoyl lactic acid, and PGE (080), polyglycerol ester of C18 fatty acid), and widely used in food products. A marked change of the surface activity of sms was found in the presence of maltodextrins by tensiometry. The combined data of laser multiangle light scattering and mixing calorimetry have suggested that this result is governed by specific complex formation between maltodextrins and sms in aqueous medium. Measurements have been made of the molar mass, the second virial coefficient and the enthalpy of intermolecular interactions in aqueous solutions. The implication of a degree of polymerization of maltodextrins in this phenomenon was shown. The interrelation between the molecular parameters of the formed complexes and their surface activity at the air–water interface has been revealed and discussed.  相似文献   
95.
采用ICP-AES法对钛基复合材料中的合金元素镍、钕、铁的测定进行了研究,着重进行了基体元素及待测元素镍、钕、铁之间干扰试验及各元素在测定浓度范围内的线性相关性试验,进行了酸度试验,测定了钛基复合材料中3种元素的含量,得到了较好的精密度和准确度。方法简便、可靠,获得满意的分析结果。  相似文献   
96.
We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.  相似文献   
97.
New Exact Solutions to the Combined KdV and mKdV Equation   总被引:2,自引:0,他引:2  
The modified mapping method is developed to obtain new exact solutions to the combined KdV and mKdV equation. The method is applicable to a large variety of nonlinear evolution equations, as long as odd- and even-order derivative terms do not coexist in the equation under consideration.  相似文献   
98.
99.
To investigate the formation of a solid electrolyte interface (SEI) on the Li1+xV3O8 electrode surface in the thermodynamic stability range of the organic electrolyte, we applied scanning photoelectron microscopy (SPEM) to a pristine electrode and to an electrode after ten cycles. The F K-edge absorption spectrum of the cycled electrode showed that LiF forms on the electrode surface during the lithium insertion–extraction process in the Li1+xV3O8/Li cell. The photoelectron spectrum for the cycled electrode showed intense spectral features corresponding to Li 1s, F 2s, F 2p, and P 2p electron signals, whereas these spectral features were of negligible intensity for the pristine electrode. The above results give strong support for the formation of an SEI that consists of LiF and compounds containing phosphorus during operation of the battery. The SPEM images also revealed that the fluorine distribution on the surface of the cycled electrode was inhomogeneous.  相似文献   
100.
1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S…  相似文献   
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