溴甲烷的等离子体发射光谱测量

利用脉冲射频空心阴极等离子体源激发含溴甲烷的工作气体产生等离子体,采用HR4000型高分辨力光谱仪测量了等离子体的发射光谱。通过光谱比较,在等离子体发射光谱图中得到了位于635.07,700.52 nm的溴原子的特征峰,并实验研究了工作气压和溴甲烷密度对溴原子特征峰强度的影响。实验结果表明:在相同的溴甲烷密度下,溴原子的特征峰强度随气压的升高而降低;在相同的气压条件下,溴原子的特征峰强度随溴甲烷密度的升高而升高;溴甲烷密度测量的精度高于1 g/m3。     

非链式化学HF（DF）激光器工作气体中电子分离的非稳定性和气体放电等离子体的自组织现象

报道了放电引发的非链式HF（DF）激光器中的激活介质由电子碰撞负离子分离引起的电离非稳定性。这种非稳性出现在电极空间分离、脉冲CO2激光加热的基于sF6的混合气体的大体积放电中。实验研究了自引发体放电过程中由激光加热引起的放电等离子体的自组织现象以及由此在放电间隙的大部分区域形成的准周期等离子体结构。重点分析了等离子体结构随气体温度和注入能量的变化,讨论了等离子体自组织对电子碰撞分离不稳定性所产生的影响,解释了混合气体中由于电子碰撞使负离子消失导致的单等离子体通道移动的产生机理。     

Propagation and interaction of ion-acoustic solitary waves in a quantum electron-positron-ion plasma

This paper discusses the existence of ion-acoustic solitary waves and their interaction in a dense quantum electron-positron-ion plasma by using the quantum hydrodynamic equations.The extended Poincar’e-Lighthill-Kuo perturbation method is used to derive the Korteweg-de Vries equations for quantum ion-acoustic solitary waves in this plasma.The effects of the ratio of positrons to ions unperturbation number density p and the quantum diffraction parameter H e (H p) on the newly formed wave during interaction,and the phase shift of the colliding solitary waves are studied.It is found that the interaction between two solitary waves fits linear superposition principle and these plasma parameters have significantly influence on the newly formed wave and phase shift of the colliding solitary waves.The investigations should be useful for understanding the propagation and interaction of ion-acoustic solitary waves in dense astrophysical plasmas (such as white dwarfs) as well as in intense laser-solid matter interaction experiments.     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.     

Dust Self‐Organized Structures II. Solutions of Master Equations for Small Diffusion

Master equations for spherical dust structures are solved numerically using the asymptotic solutions at the center of the structures for the case of absence of external ionization and small diffusions. The structures are determined by a single parameter, the external plasma flux at the surface of the structure. The equilibrium states that are possible in a limited range of this parameter are investigated numerically. It is demonstrated that in the range of existence of equilibria the structures are changing their shapes and type of distributions inside the structures. For large external fluxes the ion and dust distributions can have peaks inside the structures while for low external fluxes the dust distribution has a single maximum at the structure center. The lower is the external flux supporting the structure the larger is its size. An increase of the external flux decreases the accumulation of dust and ions at the center. The total number of dust confined by the structure is larger for larger size structures. Estimates of dust crystallization inside structures are given. The role of diffusion is calculated by perturbations and is shown to be small in all structure regions except the structure edges. In the perturbation theory we use the exact expressions of the diffusion coefficients calculated previously numerically. The regions with dust density peaks inside the structures have been calculated with two order of magnitude larger precision that allows to resolve the structure parameter dependencies inside the peaks. It is shown that although in peaks the gradients of all parameters are increased the diffusion flux is still small and that the continuity and hydrodynamic approach are applicable within an accuracy about several %‐s (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Coupling electron‐hole (e^–‐ h⁺) and electron‐ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid‐gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ～420–1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n ‐type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h_fe as large as 10, this phototransistor is capable of modulat‐ing and extinguishing the collector plasma with emitter‐base bias voltages <1 V. Electrons injected into the base when the emitter‐base junction is forward‐biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion‐enhanced field emission in which ions arriving at the base‐collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base‐collector interface, the PBJT's emitter‐base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor‐plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ion Heating in Dusty Plasma of Noble Gas Mixtures

Ion heating in dusty plasma of noble gas mixtures is studied by the observation of dust particles in stratified glow discharge. The particles and their formations can be used as a “contact‐free” probe of the ion flows. It is shown that under condition of experiments transition of dust particles into crystalline state in pure gases occur at much lower pressures in comparison to the case of gas mixtures. This observation is also supported by the evaluation of “effective” kinetic temperature of dust particles as defined from the velocity distribution function at the same set of discharge parameters. Absolute value of temperature of dust component in the mixture of helium and argon indicates important role of argon ionization process (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

极端相对论快电子分布等离子体中横振荡色散关系

本文对各向同性极端相对论快电子呈幂律分布等离子体中横振荡色散关系进行了解析和数值研究.得到长波支和短波支色散关系的解析表达式.由于解析近似对波数的限制,无法得到全波数空间色散曲线,因此对色散方程进行了数值求解.研究表明,在满足长波支和短波支条件时,解析色散曲线与数值色散曲线完全符合.此外,利用多项式回归的方法对数值结果进行拟合,得到不同参数下快电子分布等离子体横振荡色散关系近似表达式,该结果为进一步研究快电子分布等离子体的性质提供了重要的理论依据. 关键词： 相对论性等离子体 快电子分布 色散关系 数值计算