Polymer/boron nitride nanocomposite materials for superior thermal transport performance

Boron nitride nanosheets were dispersed in polymers to give composite films with excellent thermal transport performances approaching the record values found in polymer/graphene nanocomposites. Similarly high performance at lower BN loadings was achieved by aligning the nanosheets in poly(vinyl alcohol) matrix by simple mechanical stretching (see picture).     

CEMS of nitride coatings in agressive environments

The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO₂ atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Mössbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.     

Nitrogen dissociation and its excitation/vibrational temperature with hydrogen admixture in 50 Hz DC discharge

Trace rare gas optical emission spectroscopy (TRG-OES) is carried out to determine the excitation temperature, vibrational temperature, dissociation fraction and nitrogen (N) atom density in 50?Hz active screen cage nitrogen plasma, as a function of discharge parameters (current density and fill pressure) and hydrogen concentrations. The excitation temperature is determined from Ar–I emission lines and is found to increase with hydrogen mixing. In a similar fashion, the vibrational temperature of second positive system is determined and found to have increasing trend with hydrogen addition. The dissociation fraction increases with hydrogen concentration up to 40% H₂ in the nitrogen plasma, so as the nitrogen atom density.     

Beyond Oxides: Nitride as a Ligand in a Neutral IrIXNO3 Molecule Bearing a Transition Metal at High Oxidation State

Theoretical calculations utilizing relativistic ZORA Hamiltonian point to the conceivable existence of an IrNO₃ molecule in C_3v geometry. This minimum is shown to correspond to genuine nonavalent iridium nitride trioxide, which is a neutral analogue of cationic [IrO₄]⁺ species detected recently. Despite the presence of nitride anion, the molecule is protected by substantial barriers exceeding 200 kJ mol⁻¹ against transformations leading, for example, to global minimum (O=)₂Ir−NO, which contains metal at a lower formal oxidation state.     

Compositional and electrical properties of Cr,Nb, Cr/Nb,CrNbN, and CrN/NbN multilayers grown using the d.c. magnetron sputtering technique

Cr, Nb, Cr/Nb, CrN_x, NbN_x, CrNbN, and (CrN/NbN)_n structures were produced on Si and glass substrates, using the d.c. magnetron sputtering technique. Compositional analysis, based on binding energies of Cr, Nb, and N, was carried out by means of X-ray photoelectron spectroscopy (XPS). Through Auger electron spectroscopy (AES), depth profiles were obtained, allowing to demonstrate the multilayers production. Surface morphological characteristics, as roughness and grain size, were evaluated by atomic force microscopy (AFM), revealing very smooth surfaces, that is a consequence of the deposition parameters used in the synthetization experiments. Finally, for different configurations, conductivity measurements were carried out, revealing the influence of nitrogen content and temperature on electron transport. It was found that substoichiometric nitrides (CrN_0.35 and NbN_0.12) exhibited the highest conductivity, because the nitrogen atoms act as donor of electrons.     

Multimetallic Oxynitrides Nanoparticles for a New Generation of Photocatalysts

A versatile synthetic strategy for the preparation of multimetallic oxynitrides has been designed and here exemplarily discussed considering the preparation of nanoscaled zinc–gallium oxynitrides and zinc–gallium–indium oxynitrides, two important photocatalysts of new generation, which proved to be active in key energy related processes from pollutant decomposition to overall water splitting. The synthesis presented here allows the preparation of small nanoparticles (less than 20 nm in average diameter), well-defined in size and shape, yet highly crystalline and with the highest surface area reported so far (up to 80 m² g⁻¹). X-ray diffraction studies show that the final material is not a mixture of single oxides but a distinctive compound. The photocatalytic properties of the oxynitrides have been tested towards the decomposition of an organic dye (as a model reaction for the decomposition of air pollutants), showing better photocatalytic performances than the corresponding pure phases (reaction constant 0.22 h⁻¹), whereas almost no reaction was observed in absence of catalyst or in the dark. The photocatalysts have been also tested for H₂ evolution (semi-reaction of the water splitting process) with results comparable to the best literature values but leaving room for further improvement.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

TSC defect level in silicon produced by irradiation with muons of GeV-energy

Deep level transient spectroscopy has been used to observe the reduced concentrations of vacancy-related defects in γ-irradiated n-type Si containing hydrogen atoms. Data are presented on the efficiency and depth of this damage reduction as a function of the duration and temperature of the exposure to the plasma used to introduce the atomic hydrogen. A 3-hour exposure in an H plasma at 300°C prior to irradiation reduced the concentrations of the O-V, V-V and P-V centres by half or more to a depth of ～20 μm, compared to the control samples.