Rylene diimide and dithienocyanovinylene copolymers for polymer solar cells

Two polymers containing(E)-2,3-bis(thiophen-2-yl)acrylonitrile(CNTVT) as a donor unit, perylene diimide(PDI) or naphthalene diimide(NDI) as an acceptor unit, are synthesized by the Stille coupling copolymerization, and used as the electron acceptors in the solution-processed organic solar cells(OSCs). Both polymers exhibit broad absorption in the region of 300–850 nm. The LUMO energy levels of the resulted polymers are ca. –3.93 eV and the HOMO energy levels are –5.97 and –5.83 eV. In the binary blend OSCs with PTB7-Th as a donor, PDI polymer yields the power conversion efficiency(PCE) of up to 1.74%, while NDI polymer yields PCE of up to 3.80%.     

Cobalt complexes of a selenium diimide and a tellurium diimide dimer

[CoCl₂{N,N′-Te₂(N^tBu)₄}] (1) was obtained in good yields by the reaction of equimolar amounts of (^tBu)NTe(μ-N^tBu)₂TeN(^tBu) and CoCl₂ in toluene under an argon atmosphere. The crystal structure of 1·CH₂Cl₂ showed that the dimeric tellurium diimide ligand is N,N′-chelated to cobalt. The related reaction of Se(N^tBu)₂ and CoCl₂ affords a green product tentatively identified as a 1:1 adduct [CoCl₂{N,N′-Se(N^tBu)₂}] (CHN analysis). However, recrystallization from thf produces the ion-separated complex [Co₂(μ-Cl)₃{N,N′-Se(N^tBu)₂}₂(thf)₂][CoCl₃{NH₂(^tBu)}]·1½thf (2·1½thf), in which the monomeric selenium diimide ligand is N,N′-chelated to cobalt in the cation. A pathway for the formation of 2 from [CoCl₂{N,N′-Se(N^tBu)₂}] in thf is proposed.     

peri-naphthylenediamines

o-Nitro ando,o′-dinitro derivatives of 1,8-bis(dimethylamino)naphthalene and its acenaphthene analog were prepared for the first time by direct nitration with nitrogen dioxide or tetranitromethane. When 5,6-bis(dimethylamino)acenaphthene was treated with nitric acid in AcOH or MeCN or with nitronium tetrafluoroborate in MeCN, nitration was accompanied by partial demethylation of one of the NMe₂ groups. For Part 27, see Ref. 1. Published inIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 7, pp. 1215–1220, July, 2000.     

Tuning the frontier molecular orbital energy levels of n‐type conjugated copolymers by using angular‐shaped naphthalene tetracarboxylic diimides,and their use in all‐polymer solar cells with high open‐circuit voltages

An angular‐shaped naphthalene tetracarboxylic diimide (NDI) was designed and synthesized as a new building block for n‐type conjugated polymers to tune their energy levels. Three n‐type copolymers incorporating this angular‐shaped NDI as the acceptor moiety were obtained by Stille coupling reactions and had number average molecular weights of 18.7–73.0 kDa. All‐polymer bulk‐heterojunction solar cells made from blends of these polymers with poly(3‐hexylthiophene) gave a power conversion efficiency up to 0.32% and exhibited an open‐circuit voltage (V_oc) up to 0.94 V due to their relative high‐lying lowest unoccupied molecular orbital energy levels. The high V_oc of 0.94 V is higher than that of solar cells based on linear‐shaped NDI‐containing polymers (<0.6 V). The results indicate that the angular‐shaped NDI is a promising building block for constructing nonfullerene polymer acceptors for solar cells with high open‐circuit voltages. © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10⁻⁴ cm²/V s and 1.1 × 10⁻⁴ cm²/V s under the electric field of 500 (V/cm)^1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.     

Chiral Perylene Diimides: Building Blocks for Ionic Self‐Assembly

A chiral perylene diimide building block has been prepared based on an amine derivative of the amino acid L ‐phenylalanine. Detailed studies were carried out into the self‐assembly behaviour of the material in solution and the solid state using UV/Vis, circular dichroism (CD) and fluorescence spectroscopy. For the charged building block BTPPP, the molecular chirality of the side chains is translated into the chiral supramolecular structure in the form of right‐handed helical aggregates in aqueous solution. Temperature‐dependent UV/Vis studies of BTPPP in aqueous solution showed that the self‐assembly behaviour of this dye can be well described by an isodesmic model in which aggregation occurs to generate short stacks in a reversible manner. Wide‐angle X‐ray diffraction studies (WXRD) revealed that this material self‐organises into aggregates with π–π stacking distances typical for π‐conjugated materials. TEM investigations revealed the formation of self‐assembled structures of low order and with no expression of chirality evident. Differential scanning calorimetry (DSC) and polarised optical microscopy (POM) were used to investigate the mesophase properties. Optical textures representative of columnar liquid–crystalline phases were observed for solvent‐annealed samples of BTPPP. The high solubility, tunable self‐assembly and chiral ordering of these materials demonstrate their potential as new molecular building blocks for use in the construction of chiro‐optical structures and devices.     

A Solution‐Processed Air‐Stable Perylene Diimide Derivative for N‐type Organic Thin Film Transistors

For future all‐soluble organic thin film transistor (OTFT) applications, a new soluble n‐type air‐stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC–PDI–F) is synthesized. The film is formed by spin‐coating in air and optimized for OTFT fabrications. The transistor characteristics and air‐stability of the TC–PDI–F OTFTs is measured to investigate the feasibility of using solution‐processed TC–PDI–F for future OTFT applications. For all‐solution OTFT process applications, the transistor characteristics are demonstrated by using TC–PDI–F as an n‐type semiconductor material and liquid‐phase‐deposited SiO₂ (LPD–SiO₂) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.