Evaluation of phenylorganotellurium compounds as radical precursors in dialkylzinc-mediated radical addition to CN double bonds

Diethylzinc-mediated radical addition to CN bonds was investigated in the presence of phenylorganotellurium compounds as radical precursors. As group transfer agents, secondary alkyl phenyl tellurides were shown to be about twice as reactive as the corresponding alkyl iodides towards ethyl radical. Their use was proven to be advantageous regarding both chemoselectivity and yield. The replacement of diethylzinc by dimethylzinc, offers no advantage in these reactions.     

Application of solid electrolytes α-AgI and RbAg<Subscript>4</Subscript>I<Subscript>5</Subscript> for refining phase diagrams and determining standard thermodynamic functions of compounds in silver-containing systems

Standard thermodynamic properties of minerals and phases of ternary systems Ag-Au-X (X = S, Se, Te) are determined by measuring the EMF in the cells with a common gas space and Ag₄RbI₅ as the solid electrolyte. By this means, thermodynamic functions of the following minerals and phases are determined: Au₂S, Ag₃AuS₂ (uytenbogaardtite), AgAuS (petrovskaite), Ag₂Se (naumannite), AuSe, Ag₃AuSe₂ (fischesserite), and Ag₅Te₃ (stuetzite). Thermodynamics of a pyrite-pyrrhotite equilibrium in the Ag-Fe-S system is studied in a cell with a solid electrolyte based on silver iodide at 500–730 K and atmospheric pressure.     

Coupled In/Te and Ni/vacancy ordering and the modulated crystal structure of a B8 type, Ni3±xIn1−yTe2+y solid solution phase

The commensurate superstructures of a NiAs/Ni₂In type parent structure, Ni_3.32InTe₂ and Ni_3.12In_0.86Te_2.14 (q=γ[0 0 1]^*, γ=2/3) as well as one dimensionally incommensurate structure of Ni₃InTe₂ (γ=0.71) were refined from neutron powder diffraction data (R_wp=4.77%, 4.53% and 4.91% for the three structures, respectively, at 298 K). The commensurate structures were refined in the P6₃/mmc space group (c=3c_NiAs). The stacking sequence at the hcp array is -In/Te/Te/- and the trigonal bipyramidal site within the In layer, Ni(2), is partially occupied while it is empty in the Te layers. The octahedral position in between the In and Te layers, Ni(1a), is fully occupied while the octahedral position in between two adjacent Te layers, Ni(1b), is partially occupied. With decreasing In and Ni content, the modulation wave vector, γ, was found to increase continuously until γ=1. From this, crenel functions to describe the whole homogeneity range of the solid solution were constructed with the length of the atomic domains Δ^Te=γ (and hence Δ^In=Δ^Ni=1−γ) and Δ^Ni(1b)=γ/2 (and hence Δ^Ni(1a)=1−γ/2) which were then used for the refinement of the incommensurate structure of Ni₃InTe₂. The corresponding effect in real space is that the single In layers separating double layers of Te occur less frequent when γ in increasing until at γ=1 the CdI₂ type structure of Ni_1+xTe₂ is reached.     

非晶合金Fe73.5Cu1Nb3Si13.5B9的激波晶化及其特征

 研究了非晶合金Fe_73.5Cu₁Nb₃Si_13.5B₉（FINEMET）的激波晶化。与退火晶化比较,激波晶化具有一系列鲜明特征,这些特征是固态下扩散性相变理论难以解释的,有深刻的物理内涵。     

A Noise Temperature Analysis of the Electrical Degradation of Thin Nanostructured Films

Thermal noise measurements at proper biasing conditions are shown to represent a powerful tool for the characterization of the homogeneity of thin nanostructured films and their adhesion to the substrate. By modeling a thin-film as a two-dimensional random resistor network, we introduce a new type of excess-noise arising from local sources of Nyquist noise due to the presence of defective regions. The dishomogeneous Joule heating of the film is responsible for a thermal and electrical instability which is efficiently described by using a biased percolation model. The results of our simulations show that the Nyquist excess-noise temperature should provide a sensitive and non-destructive indicator of the packing density and of the quality of heat contact to the substrate of nanostructured films with grain size in the range 10–500 nm.     

离子色谱法快速连续测定锗和锡的研究

介绍了一种快速测定锗和锡的新方法──离子色谱法。锗和锡在双功能的分离柱上被分离后进行柱后显色反应,然后经可见检测器于５２０ｎｍ处检测。此法具有较高的灵敏度和选择性,整个分析过程仅需５ｍｉｎ,样品分析结果令人满意。     

Axial macrosegregation in Ga‐doped germanium grown by the vertical gradient freeze technique with a rotating magnetic field

The impact of a rotating magnetic field (RMF) on the axial segregation in Vertical Gradient Freeze (VGF) grown, Ga doped germanium is investigated. Growth experiments were performed using the VGF‐RMF as well as the conventional VGF technique. Carrier concentration profiles characterising the Ga segregation were measured by the Spreading Resistance method and calibrated using Hall values of carrier concentration and mobility. The Ga concentration rises more gradually under RMF action, i.e., the dopant segregation is significantly reduced by the rotating field. This effect is attributed to a better mixing of the melt. Numerical results on the flow velocity confirm this explanation. The RMF induced flow is much more intense than the natural buoyant convection due to the radial temperature gradient and leads to a pronounced decrease of the effective partition coefficient k_eff. In the early stages of growth a k_eff value close to k₀ was obtained, i.e., the gallium was almost homogeneously distributed within the melt. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

在无定形二氧化钛上生长纳米钛硅分子筛催化剂

尺寸在1～100nm之间的材料称为纳米材料.纳米材料中表面分子占很大比例,由此产生了不同于常规材料的各种特殊性能.纳米材料在很多领域得到广泛的研究和应用.很多研究者发现纳米结构的催化剂有着与常规催化剂不同的催化活性和选择性.沸石分子筛催化剂是一种结晶的多孔物质,其孔径一般小于1 nm.     

Local Vibrations of Oxygen-Containing Thermal Donors in Germanium

The vibrational absorption bands associated with some types of double thermal donors (TD) in Ge enriched with the oxygen isotopes ¹⁶O and ¹⁸O have been identified. The thermal donors were formed during heat treatment of Ge:O crystals at 300 and 350°C. Absorption spectra were measured at room temperature and at 10 K. The formation of the thermal donors was accompanied by the appearance of three absorption bands, which in the Ge:¹⁶O spectra at room temperature are located at 600, 740, and 780 cm^–1. In low-temperature measurements, the bands at 600 and 780 cm^–1 exhibited splitting into series of narrow lines (up to 9) associated with some types of thermal donors (TD1–TD9). The absorption spectra measured at 10 K after different cooling conditions display bistability of the first four types of thermal donors (TD1–TD4). In the samples cooled by illumination with light in the region of frequencies of the fundamental absorption of Ge, pairs of lines are observed that belong to the bistable thermal donors in the helium-like configuration of double donors (DD). After cooling the samples in the dark, these pairs of lines are replaced by three new bands, which belong to local vibrational modes of bistable thermal donors in the low-energy neutral configuration. Based on the isotopic shift of the local vibrational modes of the thermal donors in Ge:¹⁶O and Ge:¹⁸O, a rigorous proof of the oxygen atoms entering into the composition of thermal donors is obtained.