Crystalline Boragermenes

Boragermene 3 featuring a double bond between the Ge and dicoordinate B atoms has been synthesized for the first time by reacting the cyclic (alkyl)(boryl)germylene–PMe₃ adduct 1 with Cl₂BN(SiMe₃)₂ followed by reductive dehalogenation with KC₈. Addition of a Lewis base (^MeNHC) to 3 leads to the formation of the corresponding adduct 4 , which shows double bond character between the Ge and tricoordinate B atoms. Compound 3 undergoes hydrogenation with H₂ concomitant with a complete scission of the Ge=B bond.     

Synthesis of Organosilyl-Functionalized Cage-Type Germanoxanes Containing Fluoride Ions

Eight corners of a double-four ring cage-type germanoxane, containing a fluoride ion, were successfully silylated by the combination of chlorosilanes and silazanes. Three different silyl groups, trimethylsilyl, dimethylsilyl, and dimethylvinylsilyl, were attached on the corners of germanoxane cage. The solubility and reactivity of the cage modified with dimethylvinylsilyl groups were significantly increased, allowing for further reaction. Hydrosilylation reaction between dimethylvinylsilylated cage geramanoxanes and dimethylsilylated cage siloxanes afforded porous solids. Functionalization of the corners of germanoxanes with silyl groups should provide valuable building blocks in various functional materials.     

Study of Ge epitaxial growth on Si substrates by cluster beam deposition

Ge epitaxial layers with reasonable quality were grown on Si (1 1 1) substrates by cluster beam deposition (CBD) process. Molecular dynamics study of the low energy Ge clusters deposition process utilizing the Stillinger–Weber two- and three-body interaction potentials was carried out to compare the experimental results. Both experimental and simulation results prove that the substrate temperature plays a dominant role in the epitaxial growth of Ge films in CBD process. The influence mechanisms of temperature are discussed.     

Phenolic resin as a carbon source for the synthesis of monometallic Mo and bimetallic CoMo carbides via carbothermal reduction route

It was the first time that phenolic resin (PR) was used as a carbon source for the synthesis of nanostructured monometallic Mo and bimetallic CoMo carbides via carbothermal reduction route. The results showed that phase-pure β-Mo₂C can be formed under an Ar atmosphere at 900°C or a H₂ atmosphere above 700°C. However, almost pure CoMo carbides (Co₃Mo₃C and Co₆Mo₆C) can be obtained only under a H₂ atmosphere at a low temperature of 630°C for 24 and 48 h, respectively. The role of PR in the preparation process has been investigated and a detailed formation mechanism was proposed based on the experimental results.     

A Neutral η5‐Aminoborole Complex of Germanium(II)

The synthesis of two η⁵‐aminoborole complexes of germanium(II) from the reaction of a germole dianion with aminoboron dichlorides is reported. This reaction constitutes a remarkable example of a germole‐to‐borole transformation. The two aminoborole complexes of germanium(II) were fully characterized by multinuclear NMR spectroscopy, IR spectroscopy, HRMS, and, in one case, by X‐ray crystallography. The results of quantum‐mechanical calculations favor the electronic structure of a half‐sandwich complex of Ge^II over an ionic representation with a germanium dication stabilized by an aromatic aminoborole dianion.     

Advances in applications of nanostructured silicon as a new multifunctional material

Abstract

The presented method of surface modification of single-crystal silicon by chemical etching makes it possible to obtain homogeneous nanostructured silicon layers with a thickness from 3 to 60?nm for application in micro- and nano-electronics as new multifunctional material. These results could be applied to the creation of sensitive photodetectors for visible and ultraviolet ranges. The method of scanning tunneling spectroscopy shows, that the changes in the thickness of nanostructured silicon layers affect the type of conductivity, and it opens new prospective for a practical application of nanostructured silicon in nano-electronics. The obtained current-voltage characteristics of nanostructured silicon layers showed different degrees of filling of the valence band, the conduction band and the appearance on the curve of the tunneling conductance of new peaks in the gas environment. The latter gives the possibility to use the method of scanning tunneling spectroscopy for a generation of gas and biosensors. The immune biosensor is proposed in the lab on a chip form based on the nanostructured silicon for the simultaneous analysis of numerous samples. The developed biosensor based on nanostructured silicon is very promising for use in so-called systems of lab-on-chip because it can be used for rapid analysis of various immune responses and is fully compatible with silicon planar technology used in the manufacturing of the semiconductor devices.     

Synthesis of syn‐2,4‐Dimercapto‐1,3,2,4‐dithiadigermetane and Its Application to Ge2PdS4 Cluster Synthesis

The sulfurization of DmpGeH₃ (Dmp=2,6‐dimesitylphenyl) afforded the trinuclear germanium sulfide [DmpGe(μ‐S)]₂(μ‐S)₂Ge(SH)‐Dmp and a series of polythiadigermabicyclo[x.1.1]alkanes (x=3, 4, 5). The reduction of the S? S bonds of these germabicycloalkanes by NaBH₄ at 0 °C afforded the dinuclear mercaptogermane syn‐[DmpGe(SH)(μ‐S)₂Ge(SH)‐Dmp] ( 5 ) in good yield. The reaction of [Pd(dppe)Cl₂] (dppe=1,2‐bis(diphenylphosphanyl)ethane) and the dilithium salt of 5 prepared in situ by the addition of nBuLi (2 equiv) gave the Ge₂PdS₄ cluster [DmpGe(μ‐S)]₂[(μ‐S)₂Pd(dppe)], in which the dithiadigermetanedithiolate is bound to the Pd atom at the two thiolato sulfur atoms. The same reaction with [Pd(PPh₃)₂Cl₂] gave another Ge₂PdS₄ cluster, [DmpGe(μ‐S)]₂[(μ‐S)₂Pd(PPh₃)], but with the dithiadigermetanedithiolate and the Pd center conjoined through a μ‐S atom between the two germanium atoms in addition to the two thiolato sulfur atoms to form a highly distorted cluster core. The formation of two different types of Ge₂PdS₄ clusters represents the usefulness of 5 in the synthesis of various polynuclear complexes composed of germanium and transition metals.     

Solvothermal Synthesis and Characterization of HgTe Nanoplatelets Using Mercury（I） Source

Mercury telluride （HgTe） nanoplatelets were obtained via a facile solvothermal reaction of mercury（I） chloride and tellurium powder in ethylenediamine （en）. Mercury（I） was first applied as the mercury sources to prepare nanocrystal HgTe; moreover, the proposed mechanism for the fabrication of the sample was discussed in detail. The HgTe nanoplatelets were characterized by powder X-ray diffraction （PXRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM） and Fourier transform infrared spectroscopy （FT-IR）. The absence of IR absorption may render the title nanocrystal useful as an IR transparent material in the region.     

A modified synthesis of tellurophene using NaBH4 to generate sodium telluride

A modified synthesis of tellurophene by reaction of diacetylene with sodium telluride is described. The primary modification involves the convenient in situ generation of sodium telluride by reduction of tellurium metal with NaBH₄ in water.