Modified Bridgman anvils for high pressure synthesis and neutron scattering

ABSTRACT

A simple modified Bridgman design for large volume pressure anvils usable in the Paris-Edinburgh (PE) press has been demonstrated at Oak Ridge National Laboratory Spallation Neutron Source. The design shows advantages over the toroidal anvils typically used in the PE press, mainly rapid compression/decompression rates, complete absence of blow-outs upon drastic phase transitions, simplified cooling, high reliability, and relative low loads (～40 tons) corresponding to relatively high pressures (～20?GPa). It also shows advantages over existing large-volume diamond cells as sample volumes of ～2–3?mm³ can be easily and rapidly synthesized. The anvils thus allow sample sizes sufficient for in situ neutron diffraction as well as rapid synthesis of adequate amounts of new materials for ex situ analysis via total neutron scattering and neutron spectroscopy.     

非晶硅界面缓冲层对非晶硅锗电池性能的影响

针对非晶硅锗电池本征层高锗含量时界面带隙失配以及高界面缺陷密度造成电池开路电压和填充因子下降的问题,通过在PI界面插入具有合适带隙的非晶硅缓冲层,不仅有效缓和了带隙失配,降低界面复合,同时也通过降低界面缺陷密度改善内建电场分布,从而提高了电池的收集效率. 进一步引入IN界面缓冲层以及对非晶硅锗本征层进行能带梯度设计,在仅采用Al背电极时,单结非晶硅锗电池转换效率达8.72%. 关键词： 非晶硅缓冲层 非晶硅锗薄膜太阳电池 带隙 界面     

锗基底7～11.5μm高性能红外宽带减反射膜的研究

为了提高锗基底的透过率和膜层的机械强度，对锗基底上高性能的红外宽带减反射膜的设计与制备工艺进行了研究。介绍了红外宽带减反射膜的膜料选择、膜系设计以及采用 离子束辅助沉积该膜系的过程。给出了用该方法制备的7～11.5μm波段宽带减反射膜的实测光谱曲线，其峰值透过率高达99.5％以上，在设计波段范围内平均透过率大于97.5％， 膜层附着性能好，光机性能稳定。这对于红外光学系统的应用具有十分重要的意义。     

Erbium in silicon–germanium quantum wells

Strained Si_1−xGe_x/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si_1−xGe_x/Si quantum wells and relaxed Si_1−xGe_x, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1×10¹⁸ and 5×10¹⁸ cm⁻³ throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si_1−xGe_x/Si layers, but erbium-implanted samples containing Si_1−xGe_x exhibit defect luminescence in the region of 0.9–1.0 eV. These defects are also present when Si_1−xGe_x/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si_0.87Ge_0.13/Si structure at a drive current density of only 1.8 mA/cm².     

Some addition reactions of bisgermavinylidene

The reaction of bisgermavinylidene [(Me₃SiN?PPh₂)₂C?Ge→Ge?C(PPh₂?NSiMe₃)₂] ( 1 ) with AdNCO (Ad = Adamantyl) afforded the [2 + 2] cycloadditon product [(Me₃SiN?PPh₂)₂CGeC(O) NAd] ( 2 ). Similar reaction of 1 with Ph₃SiOH in tetrahydrofuran (THF) yielded the base‐stabilized germanium(II) triphenylsiloxide [H₂C(PPh₂?NSiMe₃)₂Ge(OSiPh₃)₂] ( 3 ). The results suggested that reactive germavinylidene may exist in solution and is capable of forming addition reaction products. The X‐ray structures of 2 and 3 were determined. Copyright © 2007 John Wiley & Sons, Ltd.     

龙头山饮用天然锗泉水概况

报告了龙头山饮用天然锗泉水的锗浓度，水质和保健作用等概况。     

Characterization of nano‐organized multilayers constituted by successive inorganic (gold) and organic (alkylthiols) layers

Nanostructured multilayers constituted by alternate metallic (gold) and organic (alkyldithiol) layers, and grafted onto glass or silicon substrates are prepared and analysed. Such complex layers could be of interest as a new type of surfaces but also as localized dissipative zones particularly in the field of adhesion science. The formation and the structure of these model systems are examined using a number of techniques such as atomic force microscopy (AFM), wetting analysis (contact angles), X‐ray photoelectron spectroscopy (XPS) and conductivity measurements. It is shown that, in terms of electrical conductivity, gold layers exhibit a percolation transition from an insulating granular structure to a conductive worm‐like structure at a threshold thickness of about 5 nm. XPS (and wettability) analyses clearly indicate that the fractional coverage of the gold surface is about 30% with alkyldithiol and that these molecules are either grafted in a stand‐up position or in the form of a loop. Moreover, a partial electrical connection between two successive gold layers is observed, confirming that the confined organic layer of alkyldithiol between them is too loosely organized to play the role of an insulating barrier. Copyright © 2007 John Wiley & Sons, Ltd.     

Synthesis of tri-and tetraalkynylgermanes

A straightforward synthesis of tetra-and trialkynylgermanes by reactions of compounds containing Ge-N or Ge-Cl bonds with alk-1-ynes was proposed. Reactions of appropriate amino-or halogermanes with alk-1-ynes were effective only in the presence of an equivalent amount of zinc dihalide. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1377–1379, August, 2006.