The lithium- and sodium-enhanced transformation of Ba-exchanged zeolite LTA into celsian phase

The Li⁺- and Na⁺-doped hexacelsians (HC) synthesized from Ba-LTA synthetic zeolite as precursors were used for preparation of monoclinic celsians (MC). The doped pure MC and mixture HC/MC species were obtained by thermally induced polymorphous transformation at 1200 °C. Synthesized-doped MC have been characterized by X-ray powder diffraction and spectroscopic (infrared, Raman and ²⁹Si magic angle spinning nuclear magnetic resonance) methods. The obtained results suggest that in all investigated samples Na⁺ or Li⁺ dopants were incorporated in MC crystal structures during thermal transformation of a zeolite. It has been shown that HC→MC transformation depends on molar fractions of alkali cations. These findings combined with used temperature/time conditions could help in optimization of MC synthesis route.     

A quantitative study on the effect of nitrogen concentration on two-dimensional electron gas (2DEG) mobility in a dilute nitride GaAsN/AlGaAs heterostructure

Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs_1−xN_x/Al_0.38Ga_0.62As samples (x=0, 0.1% and 0.4%) shows that, as x increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively.     

Carrier transport of doped nanocrystalline Si formed by annealing of amorphous Si films at various temperatures

Phosphorus- and boron-doped hydrogenated amorphous silicon thin films were prepared by the plasma-enhanced chemical vapor deposition method. As-deposited samples were thermally annealed at various temperatures to get nanocrystalline Si with sizes around 10 nm. X-ray photoelectron spectroscopy measurements demonstrated the presence of boron and phosphorus in the doped films. It is found that the nanocrystallization occurs at around 600 °C for the B-doped films, while it is around 700-800 °C for the P-doped samples. For the P-doped samples, the dark conductivity decreases at first and then increases with the annealing temperature. While for the B-doped samples, the dark conductivity monotonously increases with increasing annealing temperature. As a result, the carrier transport properties of both P- and B-doped nanocrystalline Si films are dominated by the gradual activation of dopants in the films. The conductivity reaches 22.4 and 193 S cm⁻¹ for P- and B-doped sample after 1000 °C annealing.     

Structural and optical properties of porous iron oxide

The structural and optical properties of the novel porous iron oxide fabricated by wood template have been investigated. The obtained porous iron oxide was characterized to be α- Fe₂O₃ by Fourier transform infrared and Raman spectroscopy. X-ray absorption fine structure measurement revealed that the bond length of Fe-O₁ of the porous iron oxide has good agreement with that reported for the α- Fe₂O₃ crystal structure while the bond lengths for Fe-O₂ and Fe-Fe deviate slightly from those of the α- Fe₂O₃ crystal structure. Photoluminescence from the porous iron oxide exhibited broad emission bands around 760 and 890 nm, which are believed to be due to the unique nanoscale structure of the porous iron oxide.     

The effects of plastic deformation on band gap, electronic defect states and lattice vibrations of rutile

The extensive polygonization of 200 nm rutile crystals in high-energy dry milling allowed to study the spectral properties of grain boundaries and adjacent microstrained crystalline matter. Changes in UV, VIS, NIR, IR and FIR spectra during milling were followed. For the UV absorption edge the value of unstrained rutile was retained while residual traces of anatase, intergrown with the rutile phase, continued to act as traps for photoinduced charges. The evolving broad absorption in VIS and NIR could be attributed to electrons weakly bound to defects in the packing of oxygen anions at the grain boundaries, which may relax to face-sharing Ti³⁺-O octahedra. Among the IR-active lattice vibrations, the narrow E_u⁽²⁾ band showed a shift to higher frequencies by 15 cm⁻¹ which is definitively not due to phonon confinement or Fröhlich surface modes but probably to coupling of the bulk phonon to a plasmon at the grain boundary. At the external surface of the polygonized primary particle, the regular atomic order is destroyed by milling so that hydroxylation is replaced by physisorption of H₂O, as shown by IR and TG.     

Observation of phase transition of cesium manganese hexacyanoferrates by X-ray absorption spectroscopy

Cesium manganese hexacyanoferrates exhibit an interesting phenomenon of temperature-induced phase transition accompanied by a variation in the magnetic susceptibility. We observed the variation in the electronic state of Mn during the phase transition by using X-ray absorption spectroscopy. The results of the analyses showed that the content ratio of Fe^II-CN-Mn^III and Fe^III-CN-Mn^II systematically varied during the phase transition. However, the ratio of Fe^II-CN-Mn^II remained constant at almost all temperatures. These results suggest that the charge transfer between Fe and Mn ions in the Fe^III-CN-Mn^II or the Fe^II-CN-Mn^III bond produces the phase transition.     

Low-temperature preparation of anatase titania-coated magnetite

A composite photocatalyst with an anatase titania shell and a magnetite core was prepared in a novel way at low temperature (75 °C at most) by coating photoactive titanium dioxide onto a magnetic Fe₃O₄ core. The photocatalytic activity of the prepared photocatalyst was evaluated by the degradation of model contaminated water of phenol and compared to single-phase titania (either Degussa P25 or prepared titania without magnetic Fe₃O₄). The results showed that the photoactivity was slightly depressed. Then, a remarkable improvement in photoactivity was achieved by modifying the photocatalyst with a SiO₂ layer between the Fe₃O₄ core and TiO₂ shell. The repetitive using of the modified photocatalyst was also investigated, and experimental results illustrated that the photocatalytic-degraded ratio of phenol was still higher than 80% after six cycles.     

Heat treatment effects on dielectric and physico-chemical properties of an epoxy polymer

Infrared (IR) spectroscopy, dielectric spectroscopy (DS), and thermally stimulated depolarization current (TSDC) have been used to study heat treatment effects on an epoxy-based polymer. Variations in physico-chemical and dielectric properties were examined for annealing temperatures between 55 and 170 °C. IR results have shown that heating causes both chain scission and thermal oxidation of the polymer, increasing thus the amount of trapped charges. The complex dielectric permittivity and the dielectric modulus have been analyzed, by means of DS, to highlight and separate charge relaxation phenomena from conduction contributions. Results indicate structural rearrangements, leading to a decrease of dipolar relaxation frequency (from 16 to 13.5 kHz) and an increase of the relaxation strength (around 20%). TSDC measurements have shown a current peak shift towards higher temperatures, and a significant intensity decrease, which is proportional to the quantity of released charges.     

Influence of pressure on the properties of GaN/AlN multi-quantum wells – Ab initio study

Pressure dependence of physical properties of GaN/AlN multi-quantum wells (MQWs) was investigated using ab intio calculations. The influence of pressure was divided into two main contributions: pressure affecting the properties of GaN and AlN bulk semiconductors and an influence on systems of polar quantum wells deposited on various substrates. An influence of hydrostatic, uniaxial, and tetragonal strain on the crystallographic structure, polarization (piezoelectricity), and the bandgap of the bulk systems is assessed using ab initio calculations. It was shown that when a partial relaxation of the structure is assumed, the tetragonal strain may explain an experimentally observed reduction of pressure coefficients for polar GaN/AlN MQWs. The MQWs were also simulated directly using density functional theory (DFT) calculations. A comparison of these two approaches confirmed that nonlinear effects induced by the tetragonal strain related to lattice mismatch between the substrates and the polar MQWs systems are responsible for a drastic decrease of the pressure coefficients of photoluminescence (PL) energy experimentally observed in polar GaN/AlGaN MQWs.     

Sub-Doppler high-resolution excitation spectroscopy of the S1 ← S0 transition of dibenzofuran

Rotationally resolved ultrahigh-resolution fluorescence excitation spectra of the S₁ ← S₀ transition of dibenzofuran have been observed using the technique of crossing a collimated molecular beam and the single-mode UV laser beam. 3291 rotational lines of the band and 3047 rotational lines of the band have been assigned. The band has been found to be a b-type transition, in which the transition moment is along the twofold symmetry axis of this molecule, and only the ΔK_a = ± 1 transitions were observed. The excited state is identified to be the S₁¹A₁(ππ^∗) state. In contrast with this, the band has been found to be an a-type transition in which the transition moment is along the long axis in plane. It indicates that the intensity of this vibronic band arises from vibronic coupling with the S₂¹B₂(ππ^∗) state. We determined the accurate rotational constants and the molecule have been shown to be planar both in the ground and excited states.