Off‐center shallow donors in a spherical Si quantum dot with dielectric border

Within the effective mass approximation and using a finite element method, the ground state energy and electron cloud localization of the shallow donors in a Si quantum dot (QD) with dielectric border are calculated. Simultaneous effects of dielectric mismatch (DM) at the core–shell interface, the impurity radial position, and the external electric field on the electronic properties are investigated. We found that (i) for a freestanding QD, the binding energy is strongly enhanced due to the additional interactions of the electron with the polarization charges; (ii) the electron cloud distribution can be easily modulated by varying the impurity position; (iii) the electric field‐induced shift in energy levels increases with the DM. Therefore, the electronic energy levels of the nanocrystal could be tuned by properly tailoring the heterostructure parameters (DM with the surrounding matrix, impurity location) as well as by varying the electric field strength. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2012     

Biaxial stress‐induced giant bandgap shift in BiFeO3 epitaxial films

Thickness‐dependent stress relaxation and its influence on the bandgap of BiFeO₃ have been investigated. BiFeO₃ films with 15 at% Bi excess allow the control of lattice mismatch‐induced biaxial stress up to 10.8 GPa on SrTiO₃(001) substrates. Heteroepitaxy of such films follows the Stranski–Krastanov growth mode, as suggested by island formation on the wetting layer accompanied with stress relaxation. The bandgap is linearly decreased with the in‐plane compressive stress, and a large stress coefficient of 67 meV/GPa was extracted. A 0.7 eV red‐shift of the bandgap was observed in the fully epitaxially strained film. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of group—velocity mismatch on soliton switching in a nonlinear fibre coupler

In this work, the influence of group-velocity mismatch on soliton self-routing pulse switching in a nonlinear fibre coupler is discussed in detail by the use of both variational approach and numerical simulation. The results obtained show that the group-velocity mismatch leads to the relative displacement between the two orthogonal polarization modes, increase of the critical power, and reduction of the elimination-light ratio. For sub-ps pulse, the influence cannot be neglected.     

Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell

We report the growth and characterization of GaInAsP films on GaAs substrates by solid source molecular beam epitaxy (SSMBE) using a valve phosphorous cracker cell at varied white phosphorous beam equivalent pressure (BEP). It is found that the GaInAsP/GaAs can be easily grown with the solid sources, and the incorporated phosphorous composition as a function of the beam equivalent pressure ratio, R=f_P/(f_P+f_As), can be well described by a parabolic relationship. With the increase of the incorporated phosphorous composition, the GaP-, InP-, InAs- and GaAs-like phonon modes shift towards opposite directions and their emission intensities also change. The first three modes shift to larger wave numbers while the last one shifts to smaller wave number. The lattice mismatch, Δa/a, of the materials grown with varied phosphorous BEP follows a linear relationship. Photoluminescence (PL) measurements reveal that as the phosphorous BEP ratio increases, the peak position or energy band gap of the material shifts towards higher energy; the full-width at half-maximum (FWHM) becomes narrower, and the luminescence intensity becomes higher. In addition, the materials also show smooth surfaces that do not change significantly with phosphorous beam equivalent pressure.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

ZnO纳米棒在Si衬底上外延生长研究

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#).通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系.1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54;;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si ,[1-1-20]ZnO∥[011-]Si,失配度为18.12;.研究表明Si衬底对ZnO纳米棒生长方向具有调控作用.     

Generic security analysis framework for quantum secure direct communication

Quantum secure direct communication provides a direct means of conveying secret information via quantum states among legitimate users. The past two decades have witnessed its great strides both theoretically and experimentally. However, the security analysis of it still stays in its infant. Some practical problems in this field to be solved urgently, such as detector efficiency mismatch, side-channel effect and source imperfection, are propelling the birth of a more impeccable solution. In this paper, we establish a new framework of the security analysis driven by numerics where all the practical problems may be taken into account naturally. We apply this framework to several variations of the DL04 protocol considering real-world experimental conditions. Also, we propose two optimizing methods to process the numerical part of the framework so as to meet different requirements in practice. With these properties considered, we predict the robust framework would open up a broad avenue of the development in the field.     

强流RFQ加速器的匹配设计方法研究

模拟计算和束流实验证明不匹配是直线加速器中强流束产生束晕的直接原因. 束晕的产生将导致束流品质下降和束流丢失, 也使得不匹配成为引起束流丢失的主要原因. 为了提高强流RFQ加速器中束流的传输品质和提高传输效率, 在分析了RFQ加速器中束流不匹配的原因之后, 提出了基于常规四部曲方法的匹配动力学设计方法. 该设计方法可以有效地抑制发射度增长和提高束流的传输效率.     

Photoluminescence characterized thermal mismatch of PbTe/CdTe single quantum wells grown on GaAs substrates

This report describes photoluminescence (PL) properties of PbTe/CdTe single quantum wells grown on (1 0 0)-oriented GaAs substrates by molecular beam epitaxy. Despite the differences in crystal structure and thermal expansion coefficient between PbTe and CdTe, an intense mid-infrared emission was observed even at higher temperatures than 300 K. Multiple peaks, however, were found in the PL spectra, and the analysis of the PL peak energy dependence on temperature revealed an important role of the thermal mismatch.     

The SI Unit Candela

The history of photometry, the measurement of light—and thus also the root of the basic unit for the luminous intensity, goes back to the seventeenth century. The theoretical foundations are provided by Johann H. Lambert in his treatise on photometry around 1760. With industrialization in the nineteenth century, there is an increasing demand for stable reference light sources for the measurement of light and for an reliable definition of the unit for light. But it is not until the middle of the twentieth century that the basic prerequisites had been created to use a common, internationally recognized unit, the Candela, as a measure of the visible light. The following article describes the basics and the boundary conditions that arise for the unit candela from the revision of the SI.