MgF2对Mn4+掺杂锗酸盐红色荧光粉发光的影响

3.5MgO·0.5MgF₂·GeO₂：Mn⁴⁺作为优异热稳定性和良好发光性能的红色荧光粉而被市场应用,然而,该粉体中MgF₂的作用影响机理尚不明晰,阻碍其性能进一步优化和发展。采用高温固相法制备了系列Mn⁴⁺激活的锗酸盐荧光粉,通过对比加入MgF₂、H₃BO₃（助熔剂）,研究了该粉体的结构、形貌、发光性能等变化规律,阐明了MgF₂的发光影响作用。研究表明,加入MgF₂、H₃BO₃和不加任何助熔剂时的样品,其最佳烧结温度分别为1 150、1 250和1 350 ℃,上述温度下发光强度均为最佳值,其中加入MgF₂、H₃BO₃的样品在最佳温度处生成了纯相。MgF₂的添加,一方面同H₃BO₃一样作为助熔剂对生成纯相、提高样品结晶度起了积极的作用;另一方面,通过研究分析,确认F^-离子成功掺杂进入晶格,促使样品生成的晶体结构为Mg₁₄Ge₅（O, F）₂₄。加入MgF₂、H₃BO₃在最佳烧结温度的样品的荧光寿命分别为0.93和0.75 ms。     

Screen Printable Sol-Gel Materials for High-Throughput Borosilicate Glass Film Production

The use of sol-gel materials can simplify the industrial fabrication of high-efficiency silicon solar cells if a suitable deposition method is established. In this work, we investigate the possibilities to adapt a borosilicate glass sol-gel to provide a stable screen printing process. This material has previously been used as a boron dopant source for silicon solar cells. We now use an adjusted synthesis process, with an increased gelling time and different additives. This changes the rheological properties (i.e., the elastic and viscous moduli G′ and G″) in a way that avoids the dripping of paste through the screen and that stabilizes the material transfer in subsequent printing steps. Using this synthesis process, we were able to show a printing process with long-term stability of more than 500 prints. When comparing the adjusted to the initial paste, we show that, after thermal treatment, the obtained thin films are very similar in terms of their constitution, with a refractive index between n = 1.47 (initial) and n = 1.55 (adjusted). We also show that they provide the same amount of doping under the tested conditions (950 °C, 30 min), resulting in sheet resistances of R_□ = (42.5 ± 2.6) Ω/□ (initial) and R_□ = (46.4 ± 3.6) Ω/□ (adjusted).     

Front Transparent Passivation of CIGS-Based Solar Cells via AZO

We report a novel strategy for the front passivation of solar cells via aluminum-doped zinc oxide (AZO) films in the case of CIGS solar cells, leading to the highest efficiency of 15.07% without alkali metal post treatment and anti−reflective layer. The good passivation of CIGS solar cells via AZO films is attributed to the field passivation simulated by the SCAPS−1D software. The AZO films also exhibit high optical transparency both in visible and near infrared wavelength region, high conductivity, and cost−effective fabrication advantage. Importantly, the AZO films are deposited at room temperature via radio−frequency magnetron sputtering, showing that the AZO films are also applicable to other solar cells such as perovskite solar cells. Our work is of significance for advancing the development of CIGS−based photovoltaics devices by the well front passivation of AZO. The wide application of AZO in other solar cells such as perovskite solar cells and related tandem solar cells may also accelerate the development of these solar cells because of potential passivation of AZO, low deposition temperature, and high optical transparency of AZO.     

染料敏化太阳能电池TiO2电极的制备及电解质的影响

采用溶胶-凝胶水热法制备了锐钛矿型纳米晶TiO₂薄膜电极,在乙二醇碳酸酯(EC)/1,2-丙二醇碳酸酯(PC)电解液体系中,研究了I₂和KI含量对电极光电性能的影响,发现随着电解液中I₂含量的增加,电池的短路光电流呈现先增加后减小的趋势,但光电流增加和减少的幅度并不大,同时体系的暗电流不断增加,光电压不断下降;随着电解液中KI含量的增加,电池的短路光电流也不断增加,当KI的含量大于0.2 mol/L时,电池的短路光电流的增加的趋势减缓.并对电解液中I₂和KI含量对电池光电性能影响的原因进行了初步的探讨.     

MoS2/SnS异质结太阳能电池的模拟研究

硫化亚锡(SnS)是一种Ⅳ-Ⅵ族层状化合物半导体材料,其禁带宽度与太阳能电池最佳带隙1.5 eV非常接近,并且在可见光范围内光的吸收系数很大(α>10⁴ cm^-1),因此SnS是一种很有应用前景的材料。本文利用太阳能电池模拟软件wxAMPS模拟了MoS₂/SnS异质结太阳能电池,主要研究SnS吸收层的厚度、掺杂浓度和缺陷态等因素对太阳能电池性能的影响。研究发现:SnS吸收层最佳厚度为2 μm,最佳掺杂浓度为1.0×10¹⁵ cm^-3;同时高斯缺陷态浓度超过1.0×10¹⁵ cm^-3时,电池各项性能参数随着浓度的增加而减小,而带尾缺陷态超过1.0×10¹⁹ cm^-3·eV^-1时,电池性能才开始下降;其中界面缺陷态对太阳能电池影响比较严重,界面缺陷态浓度超过1.0×10¹² cm^-2时,开路电压、短路电流、填充因子和转换效率迅速下降。另外,通过模拟获得的转换效率高达24.87%,开路电压为0.88 V,短路电流为33.4 mA/cm²。由此可知,MoS₂/SnS异质结太阳能电池是一种很有发展潜力的光伏器件结构。     

染料敏化太阳电池用聚合物电解质

综述了本研究小组近年来用于染料敏化太阳电池中聚合物电解质的研究概况.设计合成了几类性能优良的聚合物电解质,较好地改进了液体电解质染料敏化太阳电池(DSSC)的使用稳定性,研究结果具有实际应用的价值,并提出了此领域研究今后的发展方向.     

Synthesis and Crystal Structure of a Novel Tetranuclear Complex [Pb4（HQ）6（NO3）2]

Reaction of 8-hydroxyquinoline （HQ） with Pb（NO3）2 in water resulted in the formation of a tetranuclear complex [Pb4（HQ）6（NO3）2] 1. It has been characterized by IR, elemental analyses and X-ray diffraction. Crystal data for this complex： triclinic system, space group P1, a = 9.7399（6）, b = 11.6535（8）, c = 12.6806（8） A, α = 62.8050（10）, β = 78.4910（10）, γ = 80.5490（10）°, C54H36N8O12Pb4, Mr= 1817.67, Z = 1, V = 1250.04（14）A^3, Dc = 2.415 g/cm^3,μ = 13.503 mm^-1, -12≤h≤8, -14≤k≤13, -15≤1≤15, F（000） = 840, Rint = 0.0217, R= 0.0348 and wR = 0.0927. X-ray crystal structure analysis revealed that in 1 each Pb（ II ） contains a stereo- chemically active lone pair of electrons. The Pb…C interaction, C-H……O weak interaction and π…π stacking interactions are observed in the complex. In the solid state, the complex possesses strong photoluminescent emission at 485 and 528 nm.     

脉冲强磁场下稀土材料的发光行为研究

脉冲强磁场具有峰值磁场强及扫场速度快的特点,在一个磁场脉冲内可获得从零场到最高磁场强度的全部数据,因而测量结果具有较高的精确度和对比度。稀土发光材料因具有发光谱线丰富、发光效率高的特点,在照明、显示和传感等领域有着广泛的应用。在强磁场作用下,稀土发光材料展现出发光强度和颜色可调的特征,在磁场传感、磁场标定和磁控发光器件等方面有重要应用价值。文章利用武汉国家脉冲强磁场科学中心磁光测量装置,系统地研究了铒、铕等稀土元素掺杂的发光材料在脉冲强磁场作用下的发光光谱、发光强度以及精细能级结构等特征随磁场变化的规律,初步探索了脉冲强磁场下的磁光谱在晶体结构分析、能级结构确定、磁场标定以及磁场传感等方面的应用。     

太阳爆发：源动力之谜

看似宁静的太阳上存在着诸多活动现象,其中的爆发活动,包括耀斑(solar flares)和日冕物质抛射(CMEs),是太阳系内最剧烈的能量释放,也是造成空间环境和空间天气变化的最主要因素。磁场重联一直被认为是其背后的驱动力,然而确凿的证据一直没有找到。现在,新一代观测卫星太阳动力学天文台(SDO)终于记录到了完整可信的日冕重联过程。文章中我们简要回顾太阳爆发的研究历史,介绍最新的研究成果,并讨论将来的研究重点。     

2,6-二(2-苯并咪唑基)吡啶与稀土苦味酸盐配合物的合成、晶体结构及荧光性质研究

合成了稀土苦味酸盐(pic)与配体2,6-二(2-苯并咪唑基)吡啶(L)的配合物,通过元素分析、红外光谱及电子光谱对配体及配合物进行了表征,并用X射线单晶衍射测定了配合物[CeL2(pic)2](pic)?(CH3OH)3的晶体结构.配合物属于三斜晶系,空间群为P-1,晶胞参数a=1.3795(3)nm,b=2.1292(5)nm,c=2.5651(6)nm,α=105.847(3)°,β=100.150(3)°,γ=107.893(3)°,Z=2,R=0.0519,wR=0.1255.晶体中一个不对称单元内有两个结晶学上独立的分子,这两个分子的构型基本相同,中心Ce3 均与两个三齿配位的配体及两个双齿配位的苦味酸根配位,配位数为10.中心Ce3 的配位多面体为变形双帽四方反棱柱,两个分子之间以π-π堆积连接,生成一个非中心对称的二聚体.整个晶体则是由这些二聚体以分子间氢键作用连接成三维网状超分子结构.室温下,在紫外光激发下Eu(III)配合物固体和溶液均表现出中心离子的特征荧光发射.