Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. I-V curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity (10.96 \Omega ^-1cm^-1, indicating great potential applications in nanoscale electronic and optoelectronic devices.     

Au/(SiO2/Si/SiO2)纳米双势垒/n+-Si结构的电致发光研究

利用射频磁控溅射方法 ,在n Si衬底上淀积SiO2 /Si/SiO2 纳米双势垒单势阱结构 ,其中Si层厚度为 2至 4nm ,间隔为 0 .2nm ,邻近n Si衬底的SiO2 层厚度固定为 1.5nm ,另一SiO2 层厚度固定为 3nm .为了对比研究 ,还制备了Si层厚度为零的结构 ,即SiO2 (4.5nm) /n Si结构 .在经过 6 0 0℃氮气下退火 30min ,正面蒸上半透明Au膜 ,背面也蒸Au作欧姆接触后 ,所有样品都在反向偏置 (n Si的电压高于Au电极的电压 )下发光 ,而在正向偏压下不发光 .在一定的反向偏置下 ,电流和电致发光强度都随Si层厚度的增加而同步振荡 ,位相相同 .所有样品的电致发光谱都可分解为相对高度不等的中心位于 2 .2 6eV(5 5 0nm)和 1.85eV(6 70nm)两个高斯型发光峰 .分析指出该结构电致发光的机制是 :反向偏压下的强电场使Au/ (SiO2 /Si/SiO2 )纳米双势垒 /n Si结构发生了雪崩击穿 ,产生大量的电子 空穴对 ,它们在纳米SiO2 层中的发光中心 (缺陷或杂质 )上复合而发光 .     

Ca_(0.9)Sr_(0.1)S∶Bi~(3+),Tm~(3+)荧光材料的光学性质

Ca0 .9Sr0 .1S∶ Bi3 + ,Tm3 +是一种复合掺杂复合基质荧光材料。在此给出了 4 40 nm和 52 0 nm发射的激发谱 ,2 50 nm到 3 50 nm的激发的发射谱 ,以及 4 0 0 nm到 52 0 nm的荧光衰减谱。紫外光区域的激发谱表明 ,Ca0 .9Sr0 .1S∶ Bi3 + ,Tm3 + 有两个主要的能量传递体系 ,3 2 5nm的复合掺杂中心 Tm3 + 的 CT跃迁激发体系 ,和Bi3 + 的自身激发体系。紫外激发的荧光发射谱的中心发射波长在 4 53 nm处。在电子和空穴陷阱同时存在时 ,It=I0 [( 1 +γet) ( 1 +γht) ]-n,对于 Ca0 .9Sr0 .1S∶Bi3 + ,Tm3 +材料 γh=0 .0 1 68,γe=0 .0 0 0 1 ,n=1 .1。Tm3 +的电子陷阱深度约为 0 .5e V,比复合基质中的正离子空位的空穴陷阱要深。考虑复合基质材料的线性关系 ,电子陷阱的深度可表示为 De=βe-αx;空穴陷阱的深度可表示为 Dh=( βhc-αhx) x+( βhs-αhx) ( 1 -x)。     

酞菁配合物掺杂对芘/硅树脂材料光学-氧猝灭特性的影响

基于氧对荧光的猝灭作用, 含荧光探针的高分子复合物已成为定量测定氧浓度或氧分压的新型功能材料. 本工作将酞菁及酞菁的氯铝、镁、硅和铜配位化合物掺杂在芘/聚二甲基硅氧烷光学-氧压传感材料中, 观察了它们的氧猝灭光物理作用. 结果表明, 酞菁配合物掺杂对氧猝灭显示良好的线性响应; 酞菁的硅和铜配合物可有效地增加氧猝灭灵敏度; 而酞菁氯铝降低了氧猝灭的温度系数. 这与发射谱上芘的I₃/I₁值, 芘的微环境极性相对应, 并可归因为芘与酞菁配合物的电子转移性质对荧光猝灭的影响, 以及共轭结构的稳定化和均质化作用.     

Non‐Rare‐Earth K2XF7:Mn4+ (X = Ta,Nb): A Highly‐Efficient Narrow‐Band Red Phosphor Enabling the Application in Wide‐Color‐Gamut LCD

The advent of wide color‐gamut LED backlight technology greatly improves the user experience in visions. The bottleneck restricting progress of this technology is to develop red phosphor with satisfactory spectral features and low cost. Herein, a novel non‐rare‐earth K₂XF₇:Mn⁴⁺ (X = Ta, Nb) was successfully designed and synthesized, exhibiting an admirable quantum efficiency of ∼93.5%, an extremely narrow FWHM of ∼2.3 nm, and a high color purity of ∼99.6%. Unlike the previously reported Mn⁴⁺ activated fluorides, Mn⁴⁺ in K₂XF₇ suffers highly distorted octahedral environment in C₁ (or C_2v) group symmetry, enabling the appearance of intense zero phonon line and distinctive vibronic transitions. Systematical high‐resolution spectroscopic analyses down to 10 K disclose the influences of strong crystal field, weak nephelauxetic effect, and intermediate electron‐phonon coupling are responsible for the peculiar spectral features of Mn⁴⁺ in K₂XF₇. Impressively, a wide color‐gamut reaching up to 86.7% NTSC is realized, demonstrating great validity of K₂XF₇:Mn⁴⁺ for LCD backlights. The present study not only brings a brand‐new kind of Mn⁴⁺ activated host to the sight of phosphor community (the host can be extended to surges of tantalum/niobium fluorides), but also may enlighten researchers to design highly distorted environment to achieve unique spectral properties of Mn⁴⁺.     

新型PVA荧光凝胶的制备及光物理性能研究

为了开发一系列能够在纯水介质中使用的荧光凝胶材料,以TbCl_3·6H_2O和乙酰丙酮(ACAC)为初始原料合成了铽配合物Tb(ACAC)_3·2H_2O,并对其结构进行了表征。然后将铽配合物Tb(ACAC)_3·2H_2O以不同的质量分数引入到PVA基质中,在交联剂硼酸的作用下形成荧光凝胶。利用FTIR、PL、DSC、TGA等对其结构、发光性能及其热性能进行了研究。FTIR结果表明,铽配合物成功地掺杂到了PVA凝胶体系中。荧光发射光谱表明,所有铽配合物的PVA荧光凝胶都具有很好的荧光性能,更重要的是掺杂了3%、5%、7%铽配合物的PVA荧光凝胶位于545 nm处的特征发射峰的发射强度相比于小分子铽配合物Tb(ACAC)_3·2H_2O的发射强度更高,分别是其2.15、3.27和5.65倍。表明PVA基质对铽配合物具有较好的敏化作用。此外,DSC和TGA研究结果表明,铽配合物的引入使得PVA凝胶的热稳定性略有下降,但影响不大。     

Li~+掺杂Sr_2MgSi_2O_7∶Eu~(2+),Dy~(3+)长余辉材料的发光性能

采用高温固相法制备Li+掺杂Sr2Mg Si2O7∶Eu2+,Dy3+长余辉材料,对样品进行X射线衍射、扫描电镜、激发光谱、发射光谱、余辉衰减曲线和热释光曲线表征,研究了Li+掺杂对Sr2Mg Si2O7∶Eu2+,Dy3+发光性能的影响。实验结果表明:Li+掺杂对样品激发光谱和发射光谱的峰形、峰位基本没有影响,但是能改善样品的余辉性能。与未掺杂Li+的样品比较,Li+掺杂摩尔分数为2.5%样品的初始发光强度提高了1.5倍,余辉衰减常数提高了1.6倍。通过热释光曲线表征分析陷阱数量并计算了陷阱深度,分析表明,掺杂Li+能增加基质中氧空位的数量,适量增加陷阱深度,从而提高材料的发光性能。     

Structural Changes in Human Serum Albumin According to the Data on the Phosphorescence Kinetics of a Luminescent Probe — Eosin

The influence of the human serum albumin (HSA) denaturation by a surface-active substance (sodium dodecyl sulfate (SDS)) on the phosphorescence of a luminescent probe (eosin) has been investigated. The dependences of the eosin-phosphorescence intensity on the SDS concentration were determined at different pH levels of an HSA solution. It has been shown that at SDS concentrations lower than the critical concentration necessary for micelle formation, the hydrophobic interactions of eosin with the protein influence the deactivation of the eosin triplet states. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 5, pp. 660–663, September–October, 2005.