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11.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. 相似文献
12.
Volodymyr Malyutenko Vitalii Borblik Victor Vainberg 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):563
An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera. 相似文献
13.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
14.
Luminescence properties of anodic aluminum oxide films with organic luminophores embedded into pores
V. V. Gruzinskii A. V. Kukhto A. M. Mozalev V. F. Surganov 《Journal of Applied Spectroscopy》1997,64(4):497-502
Luminescence properties of porous anodic aluminum oxide films formed in a 0.6 M solution of citric acid and luminescence of
paraterphenyl, perylene, coumarin 7, and rhodamine 6G dyes adsorbed by the films are investigated. The nature of emitting
centers in anodic aluminum oxide is revealed. Intense photoluminescence of all tested dyes embedded into pores of anodic aluminum
oxide has been found. A redshift of fluorescence spectra of dyes adsorbed by the matrix and emergence of an additional longwave
band have been detected. Data obtained can be used in developing new thin-film luminescent coatings for future applications
in optoelectronics and molecular electronics.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No 4, pp. 483–488, July–August, 1997. 相似文献
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M. U. Belyi N. E. Bartnitskaya I. F. Mel'nik B. A. Okhrimenko S. M. Yablochkov 《Journal of Applied Spectroscopy》1995,62(3):564-567
T. Shevchenko Kiev University, 252022 Kiev, Pr. Akad. Glushakova, 6, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii,
Vol. 62, No. 3, pp. 192–196, May–June, 1995. 相似文献
18.
采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1-xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。 相似文献
19.
Photoluminescence (PL), photostimulated luminescence (PSL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies were carried out on LiYF4:U4+ and pure LiYF4 crystals. The PL and EPR investigations have identified the presence of Eu3+, Tb3+ and Gd3+ ions in both of these crystals possibly due to their existence in the starting materials. The luminescence observed during afterglow, PSL and TSL revealed that emission occurs at wavelength positions 382, 413, 437 and 544 nm, which are characteristic of Tb3+ ions. The present investigations using PSL and TSL in combination with PL studies before and after gamma irradiation have revealed that selective energy transfer to Tb3+ ions occurs during electron–hole recombination processes like PSL and TSL. Even though other luminescent ions (U4+ and Eu3+) are present in the system and U4+/U3+ ions are participating in electron capture/release processes, the selective energy transfer results in Tb3+ ions acting as luminescence centers. 相似文献
20.