醇热反应低温合成锰钴镍热敏薄膜

锰钴镍复合氧化物是一种具有半导体性质的热敏材料. 本文采用金属有机沉积技术于室温条件下、在Si衬底上沉积一定 厚度的Mn_1.74Co_0.72Ni_0.54O₄金属 有机化合物薄膜, 并通过醇热反应进行低温结晶化合成, 可得到Mn_1.74Co_0.72Ni_0.54O₄结晶薄膜. 通过X 射线衍射、场发射扫描电子显微镜 (FESEM) 以及阻温特性等测试方法表征, 讨论了醇热反应对锰钴镍热敏薄膜的物相结构、微观形貌以及电学性能的影响. X射线衍射图显示薄膜已出现尖晶石结构的特征峰. 电镜照片说明结晶薄膜的表面较为平整、孔隙率低. 阻温特性关系表明薄膜具有明显的负温度系数效应, 室温(≈27°) 电阻率约为303.13 Ω·cm. 关键词： 醇热反应 锰钴镍薄膜 热敏电阻 低温合成     

低阈值飞秒钛宝石激光器的理论研究

利用数值求解的方法，从理论上系统分析了决定钛宝石激光器锁模阈值的几个关键因素. 定 量分析了腔模对克尔效应的主导作用，并将光孤子模型引入低阈值锁模理论，分析了色散与 阈值的关系. 根据理论指导在实验上完成了一台阈值低至390 mW自启动飞秒掺钛蓝宝石激光 器. 关键词： 低阈值 掺钛蓝宝石激光器 克尔透镜锁模 光孤子     

变形双重介质分形油藏非达西流动分析

考虑与实际生产相符的介质的双重特性和分形特征,并考虑介质的变形,引入双重分形介质渗透率模数,建立应力敏感地层双重分形介质系统的流动方程.采用Douglas-Jones预估-校正法获得无限大地层定产量生产时变形双重分形介质模型的数值解和无限大地层定压生产时分形介质双孔模型的数值解,作出了典型的压力曲线图版.     

Local stability analysis of a low-dissipation cyclic refrigerator*

We study the local stability near the maximum figure of merit for the low-dissipation cyclic refrigerator,where the irreversible dissipation occurs not only in the thermal contacts but also the adiabatic strokes.We find that the bounds of the coefficient of performance at a maximum figure of merit or maximum cooling rate in the presence of internal dissipation are identical to those in the corresponding absence of internal dissipation.Using two different scenarios,we prove the existence of a single stable steady state for the refrigerator,and clarify the role of internal dissipation on the stability of the thermodynamic steady state,showing that the speed of system evolution to the steady state decreases due to internal dissipation.     

低能质子在半导体材料Si 和GaAs中的非电离能损研究

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.由于低能时库仑相互作用占主导地位,一般采用Mott-Rutherford微分散射截面,但它没考虑核外电子库仑屏蔽的影响.为此,本文采用解析法和基于Monte-Carlo方法的SRIM程序计算了考虑库仑屏蔽效应后低能质子在半导体材料Si,GaAs中的NIEL,SRIM程序在计算过程中采用薄靶近似法, 并与其他作者的计算数据和实验数据进行了比较.结果表明：用SRIM程序计算NIEL时采用薄靶近似法处理是比较合理的,同时考虑库仑 关键词： 低能质子 非电离能损 硅 砷化镓     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Measurement of lattice damage caused by ion-implantation doping of semiconductors†

Two new techniques have been used to measure the lattice damage produced in gallium arsenide by the implantation of 60 keV cadmium ions. In one of these methods, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600Å. The decrease in reflectivity resulting from ion- implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed in the scanning electron microscope as a function of the angle of incidence of the electron beam on a single crystal surface. The degradation of these ‘Coates-Kikuchi’ patterns resulting from ion implantation was used to obtain a quantitative measure of the lattice damage caused by the implantation process. The results of measurements made by both of the methods described have been compared with each other, and with data obtained by the more established method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.     

Numerical analysis of conservative unstructured discretisations for low Mach flows

Unstructured meshes allow easily representing complex geometries and to refine in regions of interest without adding control volumes in unnecessary regions. However, numerical schemes used on unstructured grids have to be properly defined in order to minimise numerical errors. An assessment of a low Mach algorithm for laminar and turbulent flows on unstructured meshes using collocated and staggered formulations is presented. For staggered formulations using cell‐centred velocity reconstructions, the standard first‐order method is shown to be inaccurate in low Mach flows on unstructured grids. A recently proposed least squares procedure for incompressible flows is extended to the low Mach regime and shown to significantly improve the behaviour of the algorithm. Regarding collocated discretisations, the odd–even pressure decoupling is handled through a kinetic energy conserving flux interpolation scheme. This approach is shown to efficiently handle variable‐density flows. Besides, different face interpolations schemes for unstructured meshes are analysed. A kinetic energy‐preserving scheme is applied to the momentum equations, namely, the symmetry‐preserving scheme. Furthermore, a new approach to define the far‐neighbouring nodes of the quadratic upstream interpolation for convective kinematics scheme is presented and analysed. The method is suitable for both structured and unstructured grids, either uniform or not. The proposed algorithm and the spatial schemes are assessed against a function reconstruction, a differentially heated cavity and a turbulent self‐igniting diffusion flame. It is shown that the proposed algorithm accurately represents unsteady variable‐density flows. Furthermore, the quadratic upstream interpolation for convective kinematics scheme shows close to second‐order behaviour on unstructured meshes, and the symmetry‐preserving is reliably used in all computations. Copyright © 2016 John Wiley & Sons, Ltd.     

Blue-phase liquid crystal display with high dielectric material

A blue-phase liquid crystal display (BPLCD) with low operating voltage and high transmittance is demonstrated by using a high dielectric material, which is used as an insulation layer or protrusion fixed on the pixel and common electrodes in in-plane switching (IPS) mode. The operating voltage is reduced to about 14 V and the transmittance is improved for the BPLCD with high dielectric constant protrusion. Compared with the conventional protrusion electrode structure, the proposed protrusion can make manufacturing process simple and easy because the electrode has no complex shape. The results will be significant in designing optimal BPLCDs.     

Indandione-Terminated Quinoidal Compounds for Low-Bandgap Small Molecules with Strong Near-Infrared Absorption: Effect of Conjugation Length on the Properties

Low-bandgap organic semiconductors have attracted much attention for their multiple applications in optoelectronics. However, the realization of narrow bandgap is challenging particularly for small molecules. Herein, we have synthesized four quinoidal compounds, i. e., QSN3 , QSN4 , QSN5 and QSN6 , with electron rich S,N-heteroacene as the quinoidal core and indandione as the end-groups. The optical bandgap of the quinoidal compounds is systematically decreased with the extension of quinoidal skeleton, while maintaining stable closed-shell ground state. QSN6 absorbs an intense absorption in the first and second near-infrared region in the solid state, and has extremely low optical bandgap of 0.74 eV. Cyclic voltammetry analyses reveal that the lowest unoccupied molecular orbital (LUMO) energy levels of the four quinoidal compounds all lie below −4.1 eV, resulting in good electron-transporting characteristics in organic thin-film transistors. These results demonstrated that the combination of π-extended quinoidal core and end-groups in quinoidal compounds is an effective strategy for the synthesis of low-bandgap small molecules with good stability.