高电荷态离子40Arq+与Si表面作用中的电子发射产额

报道了在兰州重离子加速器国家实验室电子回旋共振离子源原子物理实验平台上，用高电荷态⁴⁰Ar^q+(1≤q≤12)离子作用于半导体Si固体表面时的电子发射产额实验测量.实验中，通过改变炮弹离子的电荷态和引出电压选取其不同的势能和动能，系统地研究了入射离子势能沉积和与其在固体中的电子能损对表面电子发射产额的贡献.结果表明，作为引起表面电子发射的两个主要因素，单离子的电子发射产额与炮弹离子在固体表面的势能沉积和电子能损都有近似的正比关系.     

多个侧向链对横向量子线传输性质的调制

利用递推格林函数方法，研究了与多个量子点间无相互作用的量子链相耦合的横向量子线的电子输运特性，发现量子链上格点的个数N_U与侧向无限或有限量子链个数N对横向量子线输运性质的不同调制规律.由计算可知，利用格林函数可以方便的对传输构型及传输链中的格点数进行调解，从而得到各种人为量子器件的输运性质. 关键词： 递推格林函数 无限链 有限链 电子输运     

微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

Diamond film was deposited in CH₄ and H₂ gas mixture with a small amount of N₂ by microwave plasma assisted chemical vapor deposition (MPCVD). Scanning electron microscopy, Raman spectroscopy and transmission electron microscopy were applied to characterize the film. The results showed that the growth of grains are different the central region and the edge. In the central region, diamond grains nucleated with a density as high as 4.8×10⁸ cm^-2 and were preferential in 〈001〉 orientation. The inner grains formed an area without stacking faults,which was surrounded by a rim with a high density of stacking faults. A growth model was suggested to interpret the morphological feature and the behavior of preferential growth. At the edge, the grains were identified to be 6H polytypes of diamond and a new twin relationship of grains was found. Besides, the effect of the N dopant on the growth behavior of the diamond film deposited by MPCVD was discussed in connection with the growth rate of the film. 关键词： 金刚石 结构表征 透射电子显微镜 多型金刚石     

Monte Carlo simulations of electron dynamics in N2/CO2 mixtures

Motivated by experimental investigations of electrical discharges in N₂/CO₂/H₂O, Monte Carlo (MC) electron dynamics simulations in atmospheric N₂/CO₂ mixtures were performed. The goal was to obtain electron energy distribution functions (EEDFs), mean free path, drift velocity, collision frequency and mean energy of electrons, rate coefficients of electron-impact reactions, ionisation and attachment coefficients, as functions of the reduced electric field strength (E/N) and of the concentration of individual gas components. The results obtained by MC simulations were fitted with polynomials of up to the 3rd order with reasonable accuracy for E/N above 80 Td. The studied parameters below 80 Td were strongly non-linear as functions of E/N. This is mostly due to the influence of elastic collisions of electrons with CO₂ molecules prevailing in CO₂-dominant mixtures for E/N < 40 Td, and vibrational excitation collisions of N₂ species prevailing in N₂-dominant mixtures for E/N from 40 to 80 Td. The effect of these electron-impact processes was specific for each of the studied parameters.     

Spin polarization of electrons in magnetic heterostructures

The scattering of nonspin-polarized electrons on a heterostructure containing a magnetic element (a nonmagnetic barrier adjoining a magnetic one from left or right, or a magnetic well between two nonmagnetic barriers) is considered. The transmission coefficients and degrees of the spin polarization of electrons transmitted through these structures are obtained.     

Beta decay of 101Sn

The β decay of the very neutron-deficient isotope ¹⁰¹Sn was studied at the GSI on-line mass separator using silicon detectors for recording charged particles and germanium detectors for γ-ray spectroscopy. Based on the β-delayed proton data the production cross-section of ¹⁰¹Sn in the ⁵⁰Cr + ⁵⁸Ni fusion-evaporation reaction was determined to be about 60nb. The half-life of ¹⁰¹Sn was measured to be 1.9(3)s. For the first time β-delayed γ-rays of ¹⁰¹Sn were tentatively identified, yielding weak evidence for a cascade of 352 and 1065keV transitions in ¹⁰¹In. The results for the ¹⁰¹Sn decay as well as those from previous work on the ¹⁰³Sn decay are discussed by comparing them to predictions obtained from shell model calculations employing a new interaction in the ⁸⁸Sr to ¹³²Sn model space.     

绝缘体二次电子发射系数测量装置的研制

 成功研制了测量绝缘体二次电子发射系数的测量装置，该装置主要由栅控电子枪系统、真空系统和电子采集系统组成，测量装置产生的原电子流的能量范围为0.8~60 keV。采用单脉冲电子枪法，测量了原电子能量范围为0.8~45 keV的多晶MgO的二次电子发射系数。测量中，收集极(偏置盒)离材料表面设置为约35 mm，偏置电压设置为 45 V。测量得到：用磁控溅射法制备的MgO的二次电子发射系数最大值约为2.83，处于 2~26范围内，其对应的原电子能量约为980 eV。这表明该装置测量的绝缘体二次电子发射系数是可信的，但用磁控溅射法制备的MgO的二次电子发射系数较低，这可能是制备MgO时引入了过多的杂质在MgO二次电子发射体里面所引起的。     

小角X射线散射应用研究若干进展

文章从小角X射线散射（small-ande X-ray scattering，SAXS）的理论分析出发，结合国内外SAXS理论和应用研究的最新动态，总结了文章作者所在的研究小组近年来在SAXS技术用于材料微结构表征方面的研究成果。主要包括以下三个方面的内容：（1）有机／无机杂化材料中电子密度波动的研究；（2）弦长度分布函数材料的周期结构的研究；（3）纳米粉末晶化过程的研究。     

基于扫描隧道显微镜的原子电子云结构

本文简要介绍了扫描隧道显微镜的基本工作原理，展示了一些扫描样品（石墨和铜）的电子云图，在简要介绍量子力学关于原子电子云结构基本理论的基础上，通过理论上的电子云结构与扫描结果的比较，在一定程度上验证了量子力学关于原子电子云结构理论的正确性．     

双δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-deHaas(SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.