自旋为1/2的XY模型亚铁磁棱型链的物性和有序-无序竞争

利用不变本征算符法, 计算低温下自旋为1/2的XY模型一维亚铁磁棱型链系统的元激发谱, 讨论在此系统中不同的特殊情形下的元激发能量, 从而给出体系的三个临界磁场强度的解析解H_C1, H_C2, H_peak. 分析不同外磁场下 体系的磁化强度随温度的变化规律, 发现三个临界磁场强度的解析解H_C1, H_C2, H_peak是正确的, 并从三个元激发对磁化强度的贡献进行了说明. 低温下磁化强度随外磁场的变化呈现1/3磁化平台. 体系的磁化率随温度或者外磁场的变化都出现了双峰现象. 这说明双峰源于二聚体分子内电子自旋平行排列的铁磁交换作 用能和二聚体与单基体分子间电子自旋反平行排列的反铁磁交换作用能, 热无序能, 外磁场强度相关的自旋磁矩势能之间的竞争.     

Improving microwave dielectric properties of La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics with CuO additive

The microwave dielectric properties of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were investigated with a view to their application in microwave devices. CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics exhibited no significant variation of phase with sintering temperature. By adding 0.75 wt.% CuO, a dielectric constant of 20.07, a quality factor (Q × f) of 63,000 GHz, and a temperature coefficient of resonant frequency τ_f (−77.0 ppm/°C) were obtained when La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1500 °C for 4 h.     

Coupled-channel optical calculation for positron—lithium scattering

Positron scattering with atomic lithium is investigated by using a coupled-channel optical method.The ionization continuum and positronium formation channels are taken into account via a complex equivalent-local optical potential.The positronium formation cross sections and the ionization cross sections,as well as the total scattering cross sections,are reported at energies above 3 eV and compared with available experimental and theoretical data.     

The effect of interfacial energy anisotropy on planar interface instability in a succinonitrile alloy under a small temperature gradient

The morphological stability of a planar interface with different crystallographic orientations is studied under a small positive temperature gradient using a transparent model alloy of succinonitrile.Novel experimental apparatus is constructed to provide a temperature gradient of about 0.37 K/mm.Under this small temperature gradient,the planar interface instability depends largely on the crystallographic orientation.It is shown experimentally that the effect of interfacial energy anisotropy on planar interface stability cannot be neglected even in a small temperature gradient system.Higher interfacial energy anisotropy leads the planar interface to become more unstable,which is different from the stabilizing effect of the interfacial energy on the planar interface.The experimental results are in agreement with previous theoretical calculations and phase field simulations.     

A theoretical study of the oxygen K-edge near-edge X-ray absorption ne structure of N2O/Ir(110)

A multiple-scattering cluster method is employed to calculate the oxygen K-edge near-edge X-ray absorption fine structure of N₂O/Ir(110) and its monolayer. Two peaks and one weak resonance appear in both cases. The selfconsistent field DV-X calculations of the peaks and resonance show that the physical origin of the pre-edge peak x is different from those of the main peak 1 and the other weak resonance σ₁. This setup is intrinsic to the N₂O monolayer, owing to the interaction between the neighbouring molecular chains in the monolayer and partly to the adsorbed atomic oxygen, according to both the theoretical and experimental data.     

InAIAs／GaSbAs／InPDHBT与InP／GaSbAs／InPDHBT性能比较分析

双异质结双极晶体管（DHBT）的性能与发射区-基区（E．B）异质结和基区．集电区（B．C）异质结的能带突变类型关系密切,本文基于热场发射．扩散模型,对两类不同能带结构类型的新型DHBT的性能做了比较分析．结论表明：与作为当今研究热点的E．B和B．C异质结构均为全交错II型能带结构的InP／GaSbAs／InPDHBT的性能相比,E．B异质结采用传统I型、B．C异质结采用交错II型的一类新型能带结构的InAlAs／GaSbAs／InPDHBT虽然在开启电压上更高,但具有更好的电流驱动能力、直流增益和高频性能．     

InAs/GaSb量子阱的能带结构及光吸收

采用八能带K-P理论以及有限差分方法,研究了沿[001]方向生长的InAs/GaSb二类断带量子阱体系的能带结构、波函数分布和对[110]方向线性偏振光的吸收特性.研究发现,通过改变InAs或GaSb层的厚度,可有效调节该量子阱体系的能带结构及波函数分布.计算结果表明,当InAs/GaSb量子阱的导带底与价带顶处于共振状态时,导带基态与轻空穴基态杂化效应很小,且导带基态与第一激发态的波函数存在较大的重叠,导带基态与第一激发态之间在布里渊区中心处的跃迁概率明显大于导带底与价带顶处于非共振状态时的跃迁概率.研究结果对基于InAs/GaSb二类断带量子阱体系的中远红外波段的新型级联激光器、探测器等光电器件的设计具有重要意义.     

煤质硫含量紫外差分吸收测量方法研究

快速准确地测定煤质硫含量,可为企业、环境监督部门提供重要的技术依据。国内外已有多种煤质硫含量分析仪器,但或多或少存在令操作人员不满意的地方。提出一种基于紫外(UV)差分吸收光谱(DOAS)的煤质硫含量测量方法。针对分子数分数测量范围宽、光程短等问题,在传统算法的基础上,提出基于有限脉冲响应(FIR)滤波和四阶多项式非线性补偿的改进DOAS算法。搭建了实验测量系统,对5种标准煤样进行了实验研究。结果表明,测量系统的下限为0.014%,能够去除烟尘和背景气体的影响,降低系统的维护量,单次测量时间在4min左右,测量系统的重复性满足国家标准的要求。     

高分辨率制冷型中波广角红外成像系统的光学设计

设计了一个F数为2,工作波段为3.7～4.8μm,全视场2ω=111.2°的高分辨率制冷型中波广角红外成像光学系统。该系统采用二次成像构型,通过Si、Ge、ZnSe三种材料六片式对称布局,利用折/衍混合器件及非球面,实现了光学被动消热差设计,使系统在-55℃至+80℃的宽温范围内,在空间频率为33lp/mm处的光学传递函数(MTF)均大于0.4,系统在15μm的像素尺寸内,能量集中度大于70%;采用f-θ设计,使成像系统对不同视场具有相同的角分辨率;通过引入光阑像差和控制像方视场角,使像面具有较好的均匀性,边缘视场最低相对照度为中心视场的90.9%,且具有近100%的冷光阑效率,同时,系统具有较好的冷反射抑制效果,该光学系统适用于像素为15μm,分辨率为640pixel×512pixel的中波制冷探测器。