Linewidth enhancement factor of quantumdot lasers

The linewidth enhancement factor (α) of inhomogenously broadened InAs/GaAs quantum dot (QD) lasers is studied taking into account the effect of the multi-discrete QD energy levels for both electrons and holes. The effect of size-fluctuation and the separation between the energy states on α for different applied bias is studied. Very small value of α (∼0.3) is obtained at high-applied bias. This value is smaller than the linewidth enhancement factor in quantum well lasers. An empirical formula for the linewidth enhancement factor is also derived.     

Sub-natural linewidth of the probe absorption spectrum in a cold Cs atom molecule system

We theoretically analysed the linewidth of the probe absorption spectrum in a cold Cs atom--molecule system. The tunnelling coupling between the two excited molecular states, especially for the Cs atom--molecule system, plays an important role in obtaining the sub-natural linewidth of the probe absorption spectrum. For example, when the tunnelling couple strength fulfils \sigma _12=10γ _ab₁, the linewidth is only about 0.66~MHz. Moreover, since the linewidth of interest is dominated by the tunnelling coupling, the absorption peak becomes very narrow even in the case of large pump laser intensities.     

受激布里渊散射的线宽压缩及时间相干性

首先从实验上研究了受激布里渊散射(SBS)的线宽压缩效应. 发现线宽压缩直接受到脉宽压缩的影响. 进而提出了一种通过测量SBS脉宽来测量SBS线宽的新方法. 在此基础上, 详细讨论了SBS的时间相干性, 指出 SBS的时间相干性不是固定不变的, 而是随线宽压缩的程度发生变化. 最后指出 SBS的脉宽压缩率和时间相干性不能同时达到最佳值.     

基于偏振旋转光反馈下的外光注入VCSEL产生高性能毫米波

本文提出一种基于偏振旋转光反馈下的外光注入垂直腔 表面发射激光器(VCSEL)产生高性能毫米波的方案, 并利用描述外部扰动下VCSEL动态特性的自旋反转模型(SFM), 对所产生的毫米波的特性进行了数值研究. 研究结果表明: 一个受到主VCSEL(M-VCSEL)光注入的副VCSEL(S-VCSEL)在一定条件下可以产生单周期(P1)振荡, 即在光波上调制了一个微波信号. 通过调节外光注入强度ξ_i以及S-VCSEL与M-VCSEL之间频率失谐Δν, 可以获得频率在30---60 GHz范围内连续可调的毫米波信号. 在外光注入VCSEL中引入偏振旋转光反馈, 通过选取合适的反馈强度ξ_f以及反馈延迟时间τ, 产生的毫米波信号的线宽可以得到明显窄化. 对于光注入S-VCSEL所产生的线宽为5.509 MHz的毫米波, 在引入偏振旋转光反馈后, 毫米波线宽可以降低到230.2 kHz. 本文的研究对高速光载无线(RoF)系统中优质毫米波信号的获取具有一定的参考意义.     

高斯脉冲在半导体光放大器中传输的解析表征

采用解析方法,在考虑材料损耗和色散的情况下,详细研究了无啁啾高斯脉冲和啁啾高斯脉冲在半导体光放大器中传输的物理过程,分析了强度增益、脉冲宽度和频率啁啾与线宽增强因子、色散系数、小信号增益特征参数及初始啁啾之间的关系。结果表明:当输入变换极限的高斯脉冲时,色散会引起增益压缩,脉冲展宽和频率啁啾;同样情况下,线宽增强因子越大,脉宽加宽越明显,输出脉冲啁啾越大,且随着线宽增强因子的增大,输出脉冲啁啾极大值向特征参数值较小的一边移动。当输入啁啾高斯脉冲时,初始脉冲啁啾越大,增益压缩越明显,啁啾系数为正时,脉冲单纯展宽,输出啁啾随特征参数的增大而逐渐减小,啁啾系数为负时,初始啁啾与群速度色散导致的啁啾相互竞争,致使脉冲先被压缩后被展宽;脉冲最窄处对应的特征参数随线宽增强因子的增大而先增大后减小,输出啁啾随特征参数的增大而经历振荡后趋于平稳。     

光谱特性对半导体泵浦碱蒸气激光器性能的影响

以速率方程模型为基础研究了光谱特性对半导体泵浦碱蒸气激光器性能的影响。结果表明:碱蒸气激光器的运行存在最优温度,温度和长度对碱蒸气激光器性能的影响是等价的,可以定义一个与温度和长度无关的效率描述其它参量一定时激光器的最优效率;泵浦谱宽对阈值泵浦强度的影响是线性的,由于碱金属原子在谱线远翼具有较大吸收截面,即使泵浦谱宽几倍或十几倍于原子吸收谱宽时也可能获得较高的效率;原子吸收谱宽对阈值泵浦强度的影响是非线性的,随着原子吸收谱宽的增加激光器光-光效率出现饱和下降;泵浦谱宽和原子吸收谱宽越宽,半导体激光器由于温度或电流导致的中心波长漂移的影响越小,实际中采用外腔压窄的半导体激光器阵列(谱宽小于200 GHz)可以控制其温度或电流漂移,使得碱蒸气激光器的性能基本不受影响。     

窄线宽、高光束质量的外腔双反馈激光二极管阵列(英文)

设计了一种离轴双反馈外腔能够有效地改善激光二极管阵列的线宽和光束质量。闪耀光栅和高反镜之间形成了一个共振腔。通过调整光栅和高反镜之间的倾角可以选定一个空间模在共振腔中放大。将一个半波片插入外腔中的光栅反馈支路,来控制反馈光的数量,激光从光栅反馈支路输出。运用这项技术,在工作电流16 A,可以把激光二极管阵列的输出线宽压缩到0.15 nm,光束束宽积减小到283 mm.mrad。由于光栅的锁定作用,中心波长几乎不随温度的变化而改变。在工作电流17A时,输出激光的功率为2.44 W,斜率效率为0.5 W/A。     

Sub-Hertz frequency stabilization of a commercial diode laser

We report ultra-stable locking of a commercially available extended cavity diode laser to a vibration-insensitive, high finesse Fabry-Perot cavity. A servo bandwidth of 2 MHz is demonstrated. The individual frequency stability of the diode laser after locking is independently measured with a three-cornered-hat method. The resulting Allan deviation reaches a level of 3 × 10^− 15 at 1 s, even without vibration isolation of the reference cavity.     

Investigation of Transient Properties of Electromagnetically Induced Transparency with a Strong Probe Laser

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Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers

We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.