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81.
Some recent studies at Coventry University sonochemistry centre   总被引:1,自引:0,他引:1  
Three main areas of research at Coventry University are discussed: the uses of power ultrasound in polymer science (for both synthesis and degradation) and its effects on catalytic reactivity and radical production in solution.  相似文献   
82.
甲基苯基乙烯硅橡胶具有耐高低温、防震等独特优势,在航天器的减震、密封等领域具有广泛应用前景。研究了甲基苯基乙烯基硅橡胶的电离总剂量效应。结果表明,随着辐射剂量的增加,甲基苯基乙烯基硅橡胶的力学性能出现了不同程度的退化。拉伸强度和撕裂强度变化规律以1106 Gy(Si)剂量点为分界点。低于该剂量,拉伸和撕裂随剂量增加快速下降;高于该剂量时,随辐照剂量增加,拉伸强度出现一定程度反弹,呈现出宽U形,而撕裂强度则是先增加后下降。拉断伸长率和邵氏硬度A随辐照剂量增加分别出现快速下降和增加,最终接近饱和。最后,从辐射交联和裂解方面讨论了甲基苯基乙烯基硅橡胶电离总剂量效应的潜在物理机制。  相似文献   
83.
Light‐induced degradation (LID) has been identified to be a critical issue for solar cells processed on boron‐doped silicon substrates. Typically, Czochralski‐grown silicon (Cz‐Si) has been reported to suffer from stronger LID than block‐cast multicrystalline silicon (mc‐Si) due to higher oxygen concentrations. This work investigates LID under conditions practically relevant under module operation on different cell types. It is shown that aluminium oxide (AlOx) passivated mc‐Si solar cells degrade more than a reference aluminium back surface field mc‐Si cell and, remarkably, an AlOx passivated Cz‐Si solar cell. The defect which is activated by illumination is shown to be doubtful a sole bulk effect while the AlOx passivation might play a certain role. This work may contribute to a re‐evaluation of the suitability of boron‐doped Cz‐ and mc‐Si for solar cells with very high efficiencies. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)  相似文献   
84.
Na5PV2Mo10O40 supported on nanoporous anatase TiO2 particles, TiO2–PVMo, was used as an efficient photocatalyst for photocatalytic degradation of different dyes by visible light using oxygen as oxidant. This catalyst showed a good catalytic activity in the sonocatalytic and sonophotocatalytic decomposition of different dyes in aqueous solutions. The TiO2–PVMo composite showed higher photocatalytic and sonocatalytic activity than pure polyoxometalate or pure TiO2.  相似文献   
85.
超声降解处理水体污染物的研究状况与发展   总被引:18,自引:0,他引:18  
吴胜举 《物理》2001,30(12):782-786
利用超声产生的空化效应来降解水体中的污染物,是近几年来国外研究者关注的热点领域之一。文章就超声在污染水体降解的原理、理论、降解效果以及主要的影响因素作扼要的综述介绍,对存在的问题和发展的趋势提出见解和看法。  相似文献   
86.
In this paper, ZnO/Graphene Oxide (ZnO/GO) is synthesized via ultrasound assisted precipitation method and the effect of power and ultrasound time irradiation is studied on photocatalyst properties. The synthesized samples are used for methylene blue (MB) degradation as an organic water pollutant. Physicochemical properties of the samples are investigated by XRD, FESEM, EDX, BET-BJH, FTIR and DRS techniques. Moreover, pHpzc of the sample with the best performance is calculated to study the effect of acidity on the photocatalyst efficiency in photocatalytic process. Ultrasound has a positive effect on photocatalyst performance that is because of its effect on distribution of particles and semiconductor band gap, but it has no effect on photostability of the nanocomposite. Sonication has modified distribution of particles by enhancing the active sites for oxidation process. Making structural gaps by ultrasound irradiation increases available surface area which has a similar effect on photocatalyst performance. Graphene oxide as electron collector and transporter prevents electron-hole recombination and it can be an acceptable reason for enhancement at photocatalyst performance. Finally, some of operational parameters such as pH, photocatalyst loading and dye concentration are investigated.  相似文献   
87.
MgO barrier degradation is studied in a tunneling magnetoresistance head with low resistance-area product. As the stress current is increased, the resistance is significantly reduced before the barrier breakdown, while the magnetoresistance ratio remains almost unvaried. At the same time, the bias dependence of the resistance becomes less affected by the bias polarity, suggesting that slight degradation occurs at the interface between MgO and the ferromagnetic electrode. Just before the breakdown, the bias dependence shows an increasing tendency, indicating the defect accumulation inside the MgO barrier. The results are helpful for understanding the mechanisms of barrier degradation, which is critical for developing future magnetic tunneling junction devices.  相似文献   
88.
The total dose effects of 5?MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100?Mrad on advanced 200?GHz Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study was conducted to understand the energy loss of 5?MeV proton ions in SiGe HBT structure. Pre- and post-radiation DC figure of merits such as forward- and inverse-mode Gummel characteristics, excess base current, DC current gain and output characteristics were used to quantify the radiation tolerance of the devices. The results show that the proton creates a significant amount of damages in the surface and bulk of the transistor when compared with gamma irradiation. The SiGe HBTs shows robust ionizing radiation tolerance even up to a total dose of 100?Mrad for both radiations.  相似文献   
89.
Bismuth vanadates (BiVO4) with various crystal structures (tetragonal scheelite, monoclinic scheelite, and tetragonal zircon) and morphologies (sphere-, nanosheet-, dendrite-, and flower-like) were controllably fabricated by using a mild additive-free hydrothermal treatment process under the different preparation conditions. The crystal structures, morphologies, and photophysical properties of the products were well-characterized. Subsequently, their UV- as well as visible-light photocatalytic performance was evaluated via dyes rhodamine B (RB) and methylene blue (MB) degradation. Special attention was paid to evaluate the correlation of the reactivity with crystal structure, morphology, and electronic structure of as-prepared BiVO4 samples.  相似文献   
90.
用硫代巴比妥酸反应分析了博莱霉素 A5 ( B L M A5 )对 D N A 的断裂作用在 Fe2+ 和 O2存在下, B L M A5能导致 D N A 链断裂研究了一些因素对 B L M A5 催化 D N A 断链反应的影响,设计并建立了 B L M A5 切割 D N A 反应的定量测定方法,并测得 Km 约为153 μm ol· L- 1, Vm ax 约为0046 A532nm Unit·s- 1   相似文献   
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