Effects of passage of 200 MeV Ag9+ ions in indium phosphide at different depths

Indium phosphide sample was irradiated with 200?MeV Ag⁹⁺ ions for the fluence of 2?×?10¹³?ions?cm^?2. The sample was chemically etched down up to 240?nm depth to investigate the distribution of defects at different regions. Raman scattering and glancing incidence X-ray diffraction spectra were recorded at different depths. The stress estimated from Raman shift was found to increase with depth up to 160?nm and thereafter it decreased and at a depth of 224?nm sample did not show any stress. Phonon coherence length estimated from the Phonon Confinement Model was found to vary between 43 and 18?nm with respect to depth. Glancing incidence X-ray diffraction results revealed the decrease in crystallite size from 16.12 to 1.00?nm in different depth regions.     

The electrochemical reactivity of the NiP<Subscript>3</Subscript> skutterudite-type phase with lithium

We report the electrochemical Li reactivity of the cubic NiP₃ phase, a candidate for anode applications for Li-ion batteries. NiP₃ reacts with nine lithium per formula unit leading to a first cycle reversible capacity of 1,475 mAh/g at an average potential of 0.9 V vs. Li+/Li°. Electrochemical measurements and complementary X-ray diffraction showed that NiP₃ presents a conversion process competing with an insertion process. A good cycleability may only be obtained on a limited potential window, excluding the low-potential region. This paper was presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

g-C3N4和Ni2P的复合及其光催化产氢性能研究

采用一步煅烧法使类石墨烯碳氮化合物(g-C_3N_4)和磷化镍(Ni_2P)复合并对其光催化产氢性能进行研究.利用X射线粉末衍射、透射电镜、X射线光电子能谱、紫外可见光谱对该复合催化剂的组成、形貌等进行了表征.研究了不同含量的Ni_2P以及不同牺牲剂对g-C_3N_4/Ni_2P光催化性能的影响.与单独的g-C_3N_4相比,该复合催化剂的光催化产氢速率提高了13倍,可以达到165μmol g~(-1)·h~(-1).利用光电化学和光致发光光谱等技术对该复合光催化剂的光催化产氢机理进行研究,结果表明Ni_2P在高效分离光生载流子方面起了关键作用,并且g-C_3N_4和Ni_2P的复合产生了协同效应加速了电子-空穴对的分离,提高了光催化产氢性能.     

Templated Growth of InP Nanocrystals with a Polytwistane Structure

We have synthesized InP nanocrystals of an unprecedented crystal phase at low temperature (35–100 °C) by templated growth of InP magic‐sized clusters. With the addition of stoichiometric equivalents of P(SiMe₃)₃ to the starting cluster, we demonstrate nanocrystal growth mediated through a partial dissolution and recrystallization pathway. This growth process was monitored using a combination of in situ UV/Vis and ³¹P NMR spectroscopy, revealing the intermediacy of smaller cluster species of higher symmetry. The nanocrystals that result from this templated growth exhibit a crystal structure that is neither zincblende nor wurtzite, and instead is derived from the original cluster. This structure is best described as a 3D polytwistane phase as deduced from a combination of X‐ray diffraction, Raman, and solid‐state NMR spectroscopy methods.     

吸附于纳米磷化镓粉体表面碱性品红的拉曼光谱(英文)

本文中,对吸附于纳米磷化镓(GaP)粉体表面的碱性品红拉曼光谱进行了研究。通过将吸附碱性品红与纯碱性品红晶体样品的拉曼光谱进行对比、分析可知,碱性品红在纳米GaP粉体表面发生了化学吸附。在吸附碱性品红样品的拉曼光谱中,位于1200~1320cm-1范围内的光谱特征表明可能有新的化学键(P-O-C+或Ga-O-C+)形成。碱性品红分子的中央碳正离子(C+)与GaP表面具有孤对电子的氧原子形成配位键。红外光谱结果表明,氧原子与纳米GaP粉体表面的磷原子或镓原子键合,以P-O,Ga-O或P-O-Ga形式存在于GaP表面。碱性品红分子的呼吸振动,N-苯环伸缩振动,以及苯环C-C伸缩振动散射强度与纯碱性品红晶体样品相比皆有所增强。N-苯环伸缩振动散射强度增加意味着N原子是除C+离子以外的另一个可以与GaP表面发生化学作用的活性中心,这种化学作用是由N原子与GaP表面存在共轭效应造成的。     

Über den Einfluß von Substitution auf die Kristallstruktur von SrNi2P2

About the Effect of Substitution on the Crystal Structure of SrNi₂P₂ With several series of mixed crystals the effect of substitution on the crystal structure of SrNi₂P₂ (polymorphic, the structures are variants of the ThCr₂Si₂ type) is investigated by X-ray methods. In the compound Ni completely can be substituted by Co and Cu respectively and also P by As; in Sr_1–xCa_xNi₂P₂ there is a gap of the miscibility between 0.3 ≤ x ≤ 0.6. A low substitution of the several elements more than proportionally changes the structure parameters. In this range the mixed crystals with Ca, Cu, and As, respectively, undergo first order phase transitions with significant changes of the bond distances, which will be interpreted by the results of band structure calculations.     

Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27?GPa and 900?K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2?GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa)?=?22.6???0.0014?×?T (K).     

第一性原理比较研究MnPm(M=Al,Ga,In,2≤n+m≤3)团簇

利用密度泛函理论对MnPm (M=Al,Ga,and In,2≤n+m≤3)团簇的几何和电子结构性质及稳定性进行了研究.结果表明,三原子的MnPm团簇是二重态,而单体则是三重态.富P的MP2团簇是具有C2V对称性的等腰三角形结构,而富M的M2P团簇则是具有Cs对称性的三角形结构.在三原子磷化物团簇中,MP2团簇比M2P团簇稳定,而后者中M-P键的强度比前者强.对于这些小的磷化物团簇,电离势高于裂解能,表明裂解比电离占优势.Ga2P比Al2P和In2P的HOMO-LUMO能隙和电离势都高,归咎于在富金属的M2P团簇中,相对较强的Ga-P键.