Functionalization of Graphene Oxide and its Biomedical Applications

Graphene oxide (GO) offers interesting physicochemical and biological properties for biomedicine due to its versatility, biocompatibility, small size, large surface area, and its ability to interact with biological cells and tissues. GO is a two-dimensional material of exceptional strength, unique optical, physical, mechanical, and electronic properties. Ease of functionalization and high antibacterial activity are two major properties identified with GO. Due to its excellent aqueous processability, amphiphilicity, surface functionalization capability, surface enhanced Raman scattering (SERS), and fluorescence quenching ability, GO chemically exfoliated from oxidized graphite is considered a promising material for biological applications. In addition, due to π-π* transitions, a low energy is required for electron movement, a property important in Biosensor and Bioimaging applications of GO. In this article, we present an overview of current advances in GO applications in biomedicine and discuss future perspectives. We conclude that GO is going to play a vital role in Biomedical applications in the near future.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Improved performance of porous LiFePO4/C as lithium battery cathode processed by high energy milling comparison with conventional ball milling

Porous LiFePO₄ is synthesized and coated with amorphous carbon by using high energy nano-mill (HENM) processed solid-state reaction method. FeCl₃ (38%) containing water solution which is originated from pickling of steel scrap (waste liquid) is used as a source material in this study. The result indicates that LiFePO₄ powders are well coated with the amorphous carbon. HENM process successfully produces the porous LiFePO₄ with homogeneously distributed pores and a well networked carbon web, which delivers an enhanced electrochemical rate capability. HENM process is incorporated as an effective route for reducing particle size, distributing particle homogeneously and averting agglomeration of particles of precursor in this study. X-ray diffraction, scanning electron microscopy with elemental mapping, transmission electron microscopy with selected area (electron) diffraction, Raman spectroscopy, cyclic voltammetry, and galvanostatic charge/discharge are employed to characterize the final product. Electrochemical measurement shows that the synthesized LiFePO₄/C composite cathode delivers an initial discharge capacity of 161 mAhg⁻¹ at 0.1C-rate between 4.2 and 2.5 V. Remarkably, the cathode delivers 101.9 mAhg⁻¹ at high charge/discharge rate (10 C).     

Potentiostatic and galvanostatic electrodeposition of manganese oxide for supercapacitor application: A comparison study

The structural and electrochemical properties of manganese oxide (MnO₂) electrodeposited by potentiostatic and galvanostatic conditions are studied. X‒ray diffraction analyses confirm identical MnO₂ phase (ramsdellite) are deposited under potentiostatic and galvanostatic conditions. Under comparable current density during electrodeposition, MnO₂ deposited by galvanostatic condition shows smaller crystallite size, less compact layered structure, higher surface area and wider band gap, in comparison to the potentiostatic deposition. The MnO₂ morphology difference under different electrodeposition conditions contributes to different capacitive behaviors. The lower compactness of MnO₂ deposited galvanostatically renders facile ions diffusion, leading to higher specific capacitance with low equivalent series resistance. The findings suggest galvanostatic electrodeposition is suitable to produce MnO₂ nanostructure for supercapacitor application.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

Electrochemical Determination of Dextromethorphan on Reduced Graphene Oxide Modified Screen‐Printed Electrode after Electromembrane Extraction

In this paper, electromembrane extraction coupled with differential pulse voltammetry (DPV) on a reduced graphene oxide modified screen‐printed carbon electrode (RGO‐SPCE) for the determination of dextromethorphan (DXM) in urine and plasma has been described. DXM migrated from 4 mL of a donor phase across a thin layer of 2‐nitrophenyl octyl ether (NPOE) immobilized in the pores of a porous hollow fiber, into a 20 µL acceptor phase (HCl) present inside the lumen of the fiber. Then, 15 µL of a 0.1 M NaOH solution was added to the acceptor phase and the mixture was analyzed using DPV.     

Mechanical properties and degradation studies of poly(D,L‐lactide‐co‐glycolide) 50:50/graphene oxide nanocomposite films

Poly(D,L‐lactide‐co‐glycolide) 50:50 (PLGA)/graphene oxide (GO) nanocomposite films were prepared with various GO weight fractions. A significant enhancement of mechanical properties of the PLGA/GO nanocomposite films was obtained with GO weight fractions. The incorporation of only 5 wt% of GO resulted in an ~2.5‐fold and ~4.7‐fold increase in the tensile strength and Young's modulus of PLGA, respectively. The thermomechanical behaviors of composite films were investigated by dynamic mechanical analysis. Results indicated that the values of T_g and storage moduli of the PLGA/GO composites were higher than those of the pristine PLGA. The improvement in oxygen barrier properties of composites was presumably attributed to the filler effect of the randomly dispersed GO throughout the PLGA matrix. In this work, we also studied in vitro biodegradation behavior. PLGA/GO composite films were hydrolyzed at 37°C for periods up to 49 days. Because of the presence of GO nanosheets, degradation of composite films took place more slowly with increasing GO amounts. Copyright © 2013 John Wiley & Sons, Ltd.     

Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO₂/SiO₂/Si substrates from Ba₂LnFeNb₄O₁₅ ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ε ∼150 and σ ∼10⁻⁶ Ω⁻¹ cm⁻¹ at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar E_a ∼0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.     

Application of sol–gel TiO2 film for an extended-gate H+ ion-sensitive field-effect transistor

In this study, a sol–gel TiO₂ thin film has been spin-coated on a commercial ITO glass substrate as the extended-gate field effect transistor (EGFET) for hydrogen ion sensing. The as-deposited films are further annealed at various temperatures (T_a) under ambient atmosphere. It is found that the bi-layer structure of TiO₂/ITO EGFET exhibits good linear sensitivity from pH 1 to 11. Anatase TiO₂ appeared as early as T_a = 200 °C and a brookite (121) diffraction evolved at T_a = 500 °C. No prominent influence on the surface fine structures could be found at higher T_a. Due to the reduction or disappearance of the surface hydroxyl groups on TiO₂, the sensitivities of the TiO₂/ITO pH-EGFET device are rapidly reduced. However, the influence of the conductivity decay for ITO substrates annealed at high T_a could not be excluded. A maximum sensitivity 61.44 mV/pH is achieved as T_a = 300 °C.The bi-layer structure of TiO₂/ITO exhibits better long-term stability than the traditional ITO sensing membranes. In addition, the asymmetric hysteresis is more significant in alkaline buffer solutions, which could be explained by a site-binding model because the diffusion of H⁺ ions into the buried sites of the sensing film is more rapid than that of OH⁻ ions.     

Comparison Study of Phenylquinoline-based Iridium(III) Complexes for Solution Processable Phosphorescent Organic Light-Emitting Diodes by PEDOT:PSS and Graphene Oxide as a Hole Transport Layer

Electroluminescent (EL) properties of Ir(III) complex, [(2,4-diphenylquinoli-ne)]₂Iridium picolinic acid N-oxide [(DPQ)₂Ir(pic-N-O)] were investigated using PEDOT:PSS and reduced graphene oxide (rGO) as a hole transport layer for solution processable phosphorescent organic light-emitting diodes (PhOLEDs). High performance solution-processable PhOLED with PEDOT:PSS and (DPQ)₂Ir(pic-N-O) (8 wt%) doped CBP:TPD:PBD (8:56:12) host emission layer were fabricated to give a high luminance efficiency (LE) of 26.9 cd/A, equivelent to an external quantum efficiency (EQE) of 14.2%. The corresponding PhOLED with rGO as a hole transport layer exhibited the maximum brightness and LE of 13540 cd/m² and 16.8 cd/A, respectively. The utilization of the solution processable rGO thin films as the hole transport layer offered the great potential to the fabrication of solution processable PhOLEDs.