Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

掺Eu3+硅基材料的发光性质

通过溶胶－凝胶技术制备了掺Eu^3 的硅基材料并测试了其三维荧光光谱、激光谱和发射光谱，结果显示，最佳激发波波长为350nm,最强荧光波长为620nm；在350nm光激发下的发射光谱显示Eu^3 的特征发射光谱，产生4条谱带，分别是577nm(^5D0-^7F0)，588nm(^5D0-^7F1),596nm(^5D0-^7F1)和610nm(^5D0-^7F2)。     

Photoinduced phase transition accompanied with the changes in magnetic properties

Recently, many studies have been started in search for materials which show a photoinduced phase transition (PIPT). In this work, we review two systems as typical examples of PIPT accompanied with changes in magnetic characteristics; (1) organo-metal complex [Fe(2-pic)₃]Cl₂ EtOH (2-pic = 2-amino-methyl-pyridine) and (2) III-V based magnetic semiconductors (In_1-x , Mn _x )As. In the former case, we show several nonlinear characteristics in dynamical process of photoinduced spin state transition from low-spin to high-spin states. In the latter one, photocarrier-induced ferromagnetic order has been observed by both magnetic and transport measurements.     

Study of the effect of precipitant on the high-temperature phase stability of SrO-ZrO2 prepared by n-butanol soft-template method

SrO doped zirconia (20%) was synthesized by n-butanol soft-template method using both NaOH and ammonia solution as precipitants. The high-temperature phase stability was investigated following further heat treatment at 1000°C for 2 h. XRD and Raman spectra were used to characterize the crystal form of zirconia. In addition, TEM was used to characterize the dispersibility of SrO doped zirconia. The results indicated that the concentration of OH^? introduced into the ZrO₂ lattice was the main factor controlling the crystal form of nanosized zirconia. The NaOH solution precipitant could improve the dispersibility of SrO doped t-ZrO₂, and could also prevent the phase transformation of zirconia from t-ZrO₂ to m-ZrO₂ effectively.     

掺铒聚合物光波导放大器的数值分析

针对掺铒聚合物光波导放大器(EDWA),提出了一种基于Douglas离散格式改进的有限差光束传播法(FD-BPM)的数值计算方法。对每一传输步长结合多能级速率方程计算出EDWA中光场传输强度分布,及掺铒光波导放大器的增益传输特性。设计并研究了掺铒聚合物通道波导和Y形分束器的放大增益特性。在掺铒聚合物直波导中,Er3 浓度为9.0×1025ions·m-3,输入信号和泵浦光功率分别为1μW和2mW,其增益为1.6dB/cm;在掺铒聚合物Y形分束器中,输出信号光分束比相等,并能实现无损耗分束。     

CdSxSe1-x半导体微晶掺杂玻璃在抗共振环APM激光器中不能压窄脉

本文对具有较大非线性系数,较快非线性响应和回复时间的CdS_xSe_1-x半导体微晶掺杂玻璃能否在挽共振环(亦称为非谐振环)APM激光器中有效地压缩脉宽等问题做了详尽的理论与实验的切耐与分析。理论计算与实验研究的结果均表明:在抗共振环APM激光器中,应用CdS_xSe_1-x半导体微晶掺杂玻璃不能使超短光脉冲宽度被压窄。     

高能强子在铁中的衰减

利用强子探测效率高的厚型甘巴拉山铁乳胶室,观测了能量大于4TeV强子流的衰减长度.分别对无伴随的单个强子、ΣE_γ>500TeV、100TeV≤ΣE_γ≤500TeV和30TeV≤ΣE_γ<100TeV的族事例中的强子作了测量. 初步结果表明,四种情况的衰减长度是有差异的,对此作了讨论.     

Explanation of Anomalous Diffractive Behavior with New Model in Doped KNSBN Crystals

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线形腔掺铒光纤激光器输出特性的理论研究

通过求解速率方程，从理论上详细地分析了形腔掺铒光纤激光器输出特性，得到了稳定条件下激光器阈值泵浦功率，输出功率和斜率效率的解析表达式；给出了构造线形腔掺铒光行激光器所需掺铒光纤最短长度和最佳长度的表达式。     

Surface characteristics of Ag‐doped Au nanoparticles probed by Raman scattering spectroscopy

We have examined the surface characteristics of Ag‐doped Au nanoparticles (below 5 mol% of Ag) by means of the surface‐enhanced Raman scattering (SERS) of 2,6‐dimethylphenylisocyanide (2,6‐DMPI) and 4‐nitrobenzenethiol (4‐NBT). When Ag was added to Au to form ∼35‐nm‐sized alloy nanoparticles, the surface plasmon resonance band was blue‐shifted linearly from 523 to 517 nm in proportion to the content of Ag up to 5%. In the SERS spectra of 2,6‐DMPI, the N‐C stretching peak also shifted almost linearly from 2184 to 2174 cm⁻¹ when the Ag content was 5 mol% or less; the peak then remained the same as that of the pure Ag film. The potential variation of the SERS spectrum of 2,6‐DMPI in an electrochemical environment, as well as the effect of organic vapor, also showed a similar tendency. From the SERS of 4‐NBT, we confirmed the occurrence of a surface‐induced photoreaction converting 4‐NBT to 4‐aminobenzenethiol, when Ag was added to Au to form alloy nanoparticles. The photoreaction induction ability also increased linearly with the Ag content, reaching a plateau level at 5 mol% of Ag. All these observations suggest that the surface content of Ag should increase almost linearly as a function of the overall mole fraction of Ag and, once the Au/Ag nanoparticles reach 5 mol% of Ag, their surfaces are fully covered with Ag, showing the same surface characteristics of pure Ag nanoparticles. Copyright © 2011 John Wiley & Sons, Ltd.