近红外单光子探测

随着以单个光子作为信息载体的量子通信和量子加密技术的兴起,近红外单光子探测技术受到了广泛关注.近红外单光子探测系统具有极高的灵敏度,所以它还可以胜任探测其它近红外波段微弱光信号的任务.半导体雪崩光电二极管是当前最成熟的近红外单光子探测系统的核心元器件;文章阐明了雪崩光电二极管的暗电流和击穿电压对单光子探测的影响,同时还讨论了工作温度、直流偏置、门信号性质和计数阈值等系统参数之间相互制约的关系.     

A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes

Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details.     

顶发射白光OLED器件制备及其色坐标漂移机制研究

采用了高反射率金属Al和电化学性能稳定的金属Mo,在硅基底上制备了多层结构的 Al/Mo/MoO₃阳极,并研究了不同MoO₃厚度下多层阳极的反射率。在此基础上,通过发光层共掺杂制备了顶部发光OLED器件,并对器件发光机制进行了系统研究和分析。实验结果表明：采用发光层共掺杂制备的顶部发光OLED器件的色坐标,随电流密度或电压的增加而发生漂移;OLED器件色坐标漂移的原因是三基色发光强度随电流密度的增加,逐渐偏离了形成白光(0.33, 0.33)所需三基色强度比例值,导致了OLED器件的色坐标发生了漂移,其机制是发光层中主-客之间能量转移和陷阱共同作用的结果。进一步研究发现,在不同电压下,红光发光强度随驱动电压(或电流密度)增大而线性地减小。     

Lithium solvation in a PMMA membrane plasticized by a lithium‐conducting ionic liquid based on 1‐butyl‐3‐methylimidazolium bis(trifluoromethanesulfonyl)imide

The Raman and Infrared (IR) spectra of poly(methyl methacrylate) (PMMA) membranes plasticized by ionic liquids of the (1 − x)[1‐butyl‐3‐methylimidazolium bis(trifluoromethanesulfonyl)imide (BMITFSI)],xLiTFSI type, where BMI⁺ is the 1‐butyl‐3‐methylimidazolium cation and TFSI⁻ the bis(trifluoromethanesulfonyl)imide anion, are analyzed for a lithium bis(trifluoromethane sulfone)imide (LiTFSI) mole fraction x = 0.23 and PMMA contents from 0 to 50 wt%. The lithium is found to have an average coordination of about three CO groups and less than one TFSI⁻ anion. It plays the role of a cross‐linker between the ester groups of PMMA and the nonvolatile ionic liquid. Addition of PMMA to the (1 − x)(BMITFSI),xLiTFSI ionic liquid lowers the conductivity but might improve the lithium transference number by transforming the [Li(TFSI)₂]⁻ anionic clusters present in the pure ionic liquid into a mixed coordination by ester groups and TFSI⁻ anions. Copyright © 2008 John Wiley & Sons, Ltd.     

A novel micro accelerometer with adjustable sensitivity based on resonant tunneling diodes

Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current--voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In_0.1Ga_0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.     

Spectral Characteristics of White Organic Light-emitting Diodes Based on Novel Phosphorescent Sensitizer

采用新型贵金属铱的配合物bis(1,2-dipheny1-1H-benzoimida-zole)iridium (acetylacetonate)作为磷光敏化剂,与荧光染料4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-en-yl)-4H-pyran共同掺杂到聚合物主体材料poly(N-vinylcarbazole)中,以N,N'-diphenyl-N,N'-bis(1-naphthyl) (1,1'-biphenyl)-4,4'-diami-ne作为蓝光发光层,制备了白色有机电致发光器件. 通过对掺杂体系的紫外-可见吸收光谱、光致发光光谱以及电致发光光谱的表征,分析了该磷光敏化体系的能量转移机制. 结果表明,在该聚合物磷光荧光双掺杂体系中,由于磷光与荧光材料之间的不完全的F?rster能量传递过程,导致电致发光光谱中同时存在磷光材料三线态到基态与荧光材料单线态到基态的辐射衰减发光. 该掺杂体系成功实现了白光发射,随着偏置电压的升高,器件的CIE色坐标有微小的红移,但都非常接近等能白光点,器件表现出了很好的色纯度.     

用ZCTC晶体倍频半导体激光的紫光输出

报道了新型金属络合物非线性光学材料ZCTC（硫氰硫锌镉）晶体的光学性质。测量了ZCTC晶体的折射率,计算了其相位匹配角度。进行了半导体激光（LD）室温下直接倍频实验。当808nm基频GaAlAs半导体激光功率为473mW时,获得了390μW、4040μnm紫光输出。实验表明ZCTC晶体是一种优良的半导体激光倍频紫外非线性光学材料。     

用于全光波长转换的外腔半导体激光器的注入电流选择

实验研究了注入光对光纤光栅外腔半导体激光器阈值电流的影响,给出了可同时获得高消光比和高转换速率的注入电流范围。采用载流子消耗机抽对实验结果进行了实性分析。     

电子初始能量对双向流二极管空间电荷限制流密度的影响

 从理论上研究了阴极发射电子初始能量对一维平面非相对论性双向流二极管内空间电荷限制电子、离子流密度的影响,并与阴极发射电子初始能量为0情况下的空间电荷限制电子、离子流密度进行了比较。     

用于POF的高性能共振腔发光二极管

提出用AlGaAs材料为n型下DBR,AlGaInP材料为p型上DBR,GaInP/AlGaInP多量子阱为有源区来制备650nm波长的共振腔发光二极管（RCLED）.用传输矩阵法对器件的结构进行了理论设计,并制备了RCLED和普通LED两种结构.测试结果表明,RCLED有更高的发光效率,是普通LED的近1.3倍,当注入电流从3mA增加到30mA时,RCLED的峰值波长只变化了1nm,而普通LED的波长则变化了7nm,且RCLED的光谱半宽窄,远场发散角小. 关键词： 发光二极管 共振腔 金属有机物化学气相淀积