Study on the Relation Between Discharge Voltage and Magnetic Field Topography in a Hall Thruster Discharge Channel

The relation between magnetic field topography and operating voltage is investigated in a 1kW Hall thruster discharge channel in order to focus the ion beam effectively and optimize the performance. The curvature of magnetic field line (α) is introduced to characterize the differences of topologies. The optimized magnetic field distribution under each operating voltage is obtained by experiment. Through the curvature transformation, we find that the area of (α > 1) in the channel gradually decreases with the increase of the operating voltage. In response to the results above, two dimensional plasma flows are simulated employing Particle‐in‐Cell method. The distributions of the electric potential, ion density and ion radial velocity are calculated to understand the important influence of the relation above on ion beam focusing. The numerical results indicate that magnetic field curvature and thermal electric field control the ion beam in the ionization and acceleration zone, respectively. The magnetic field topography and discharge voltage interact with each other and together form the focusing electric field. The ion radial mobility is suppressed effectively and the ion beam is focused to the channel centerline. In addition, for a given voltages, when the area of (α > 1) is larger than the optimal scope, the electric potential lines excessively bend to the anode causing ion over focus; contrarily, the electric potential lines will bend to the exit and defocus ions. All these results suggest the relation between magnetic field topography and discharge voltage is important to the ion radial flow control and performance optimization of the Hall thruster (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

RF and field measurements of the SSC-LINAC RFQ

The 53.667 MHz continuous-wave heavy ion RFQ has been designed and manufactured for the SSC-LINAC project.This four-rod RFQ accelerates ions with maximum mass to charge ratio of 7 from 3.728 keV/u to 143 keV/u.Measurements have been carried out to check the RF performance of the cavity and the quality of the electric field.The S11 of the power coupler is adjusted to better than-44 dB,and the Q0 of the cavity is 6440.The quality of the electric field is evaluated by the perturbation method.The measurement procedure and data analysis will be discussed in detail.The error due to gravity of the perturbation bead has been corrected by averaging the fields in different quadrants.As a result,the unflatness of the electric field is±2.5%,and the dipole field component distributes from 0%to 20%in different longitudinal positions,which indicates the asymmetry of the quadrupole field.The unflatness of the quadrupole field distribution represents a good agreement with the simulation results.High power RF test and beam commissioning of the RFQ are on schedule in early 2014.     

Corrosion resistance and blood compatibility of lanthanum ion implanted pure iron by MEVVA

Pure iron is a potential material applying for coronary artery stents based on its biocorrodible and nontoxic properties. However, the degradation characteristics of pure iron in vivo could reduce the mechanical stability of iron stents prematurely. The purpose of this work was to implant the lanthanum ion into pure iron specimens by metal vapor vacuum arc (MEVVA) source at an extracted voltage of 40 kV to improve its corrosion resistance and biocompatibility. The implanted fluence was up to 5 × 10¹⁷ ions/cm². The X-ray photoelectron spectroscopy (XPS) was used to characterize the chemical state and depth profiles of La, Fe and O elements. The results showed lanthanum existed in the +3 oxidation state in the surface layer, most of the oxygen combined with lanthanum and form a layer of oxides. The lanthanum ion implantation layer could effectively hold back iron ions into the immersed solution and obviously improved the corrosion resistance of pure iron in simulated body fluids (SBF) solution by the electrochemical measurements and static immersion tests. The systematic evaluation of blood compatibility, including in vitro platelets adhesion, prothrombin time (PT), thrombin time (TT), indicated that the number of platelets adhesion, activation, aggregation and pseudopodium on the surface of the La-implanted samples were remarkably decreased compared with pure iron and 316L stainless steel, the PT and TT were almost the same as the original plasma. It was obviously showed that lanthanum ion implantation could effectively improve the corrosion resistance and blood compatibility of pure iron.     

ICRH带状双天线的间距对等离子体耦合特性的影响

采用能量一次吸收假设、等离子体平板模型和三维天线模型数值模拟离子回旋共振加热时带状双天线与等离子体的耦合过程,得到天线的辐射功率、等离子体的吸收功率密度分布随天线间距变化的关系.通过对比分析,得出结论:在一定实验条件下,当带状双天线同相馈电时,天线间距越小,离子回旋共振加热效果越好.     

Confinement of the field electron emission to atomic sites on ultra sharp tips

The spatially controlled field assisted etching method for sharpening metallic tips, in a field ion microscope (FIM), is used to study the evolution of the field emission when the tip apex radius is decreased below 1 nm. Unlike the conventional image formation in a field emission microscope (FEM), we demonstrate that at this scale the field emission is rather confined to atomic sites. A single atom apex fabricated at the end of such tips exhibits an outstanding brightness compared to other atomic tips. The measurements have been repeated for two double atom tips, with different atom-atom separations, and images of atomic field emission localization have also been obtained. We have found that the field emission intensity alternates between adjacent atoms when the applied voltage is gradually increased beyond a threshold value.     

低能N离子注入对蚕豆根尖细胞的诱变效应

为了研究低能N离子束的细胞遗传学效应, 以不同剂量的N离子束对蚕豆种子的种胚进行辐照, 观察分析根尖细胞的微核率、 有丝分裂指数和染色体畸变效应。 研究发现, 离子束的注入抑制了根尖细胞的有丝分裂, 干扰了正常的有丝分裂过程, 引发了染色体的结构、 行为和数目畸变; 随着离子注入剂量的增加, 微核率增加、 有丝分裂指数降低、 染色体畸变率增加。 In order to study the cytogenetic effects of low energy nitrogen ion irradiation, broad bean seed embryo was irradiated by different doses of nitrogen ions. Micronucleus rate, mitotic index and chromosome aberration in root tip cells were analyzed. The results showed that the injection of ions inhibited mitosis of root tip cells, interfered the normal process of mitosis, caused aberrations of chromosome structure, behavior and number. The frequency of micronucleus and chromosomal aberrations increased with the increasing radiation dosage, while mitotic index decreased.     

Optical planar waveguides in Yb³⁺-doped phosphate glasses produced by He⁺ ion implantation

Optical planar waveguides in Yb 3+-doped phosphate glasses are fabricated by implanting triple-energy helium ions. The guiding modes and the near-field intensity distribution are measured by using the prism-coupling method and the end-face coupling setup with a He-Ne laser at 633 nm The intensity calculation method (ICM) is used to reconstruct the refractive index profile of the waveguide. The absorption and the fluorescence investigations reveal that the glass bulk features are well preserved in the active volumes of the waveguides, suggesting the fabricated structures for possible applications as waveguide lasers.     

F离子注入新型Al0．25Ga0．75N／GaNHEMT器件耐压分析

为了缓解AlGaN／GaNhighelectronmobilitytransistors（HEMT）器件n型GaN缓冲层高的泄漏电流,本文提出了具有氟离子注入新型Al0．25Ga0．75N／GaNHEMT器件新结构．首先分析得出n型GaN缓冲层没有受主型陷阱时,器件输出特性为欧姆特性,这样就从理论和仿真方面解释了文献生长GaN缓冲层掺杂Fe,Mg等离子的原因．利用器件输出特性分别分析了栅边缘有和没有低掺杂漏极时,氟离子分别注入源区、栅极区域和漏区的情况,得出当氟离子注入源区时,形成的受主型陷阱能有效俘获源极发射的电子而减小GaN缓冲层的泄漏电流,击穿电压达到262v通过减小GaN缓冲层体泄漏电流,提高器件击穿电压,设计具有一定输出功率新型A1GaN／GaNHEMT提供了科学依据．     

An improved injector bunching geometry for ATLAS

The bunching system of the ATLAS positive ion injector (PII) has been improved by relocating the harmonic buncher to a point significantly closer to the second stage sine-wave buncher and the injector LINAC. The longitudinal optics design has also been modified and now employs a virtual waist from the harmonic buncher feeding the second stage sine-wave buncher. This geometry improves the handling of space charge for high-current beams, significantly increases the capture fraction into the primary rf bucket and reduces the capture fraction of the unwanted parasitic rf bucket. Total capture and transport through the PII has been demonstrated as high as 80% of the injected dc beam while the population of the parasitic, unwanted rf bucket is typically less than 3% of the total transported beam. To remove this small residual parasitic component a new traveling-wave transmission-line chopper has been developed reducing both transverse and longitudinal emittance growth from the chopping process. This work was supported by the U.S. Department of Energy under contract W-31-109-ENG-38.     

On the differentiability of depth distribution function of deposited energy, momentum and ion range

Based on the translational invariance of a medium,a new theorem has been proposed and proved rigorously:the depth distributions of the deposited energy,momentum and ion range must be infinitely differentiable functions in amorphous or polycrystalline infinite targets by ion bombardment,if these functions exist.The origin of the “discontinuity”,derived by Dr Glazov in 1995 in J.Phys.:Condens.Matter 7 6365,has been analysed in detail.For the power cross section,neglecting electronic stopping,the linear transport equations determining the depth distribution functions of the deposited energy and monentum (by taking the threshold enerkgy into account )have been solved asymptotically.An important formula derived by Dr Glazov has been confirmed and generalized.The results agree with the new theorem.