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Viscoelastic ature is one of the key features of polymeric composites. A series of cyanate ester (CE)‐based composites with different aluminum nitride (AlN) contents for high performance electronic packaging, coded as AlN/CE, were developed; the viscoelastic nature of AlN/CE composites was intensively investigated by employing dynamic mechanical analysis (DMA). Results show that the AlN content has a great effect on dynamic mechanical properties of AlN/CE composites. The storage modulus in the glassy region increases linearly with the addition of AlN as well as the increase of AlN content. Meanwhile, all composites also exhibit notably higher loss modulus than cured CE resin due to the appearance of new energy dissipation forms. In addition, the incorporation of AlN has a significant effect on damping factor peak. All reasons leading to these phenomena are analyzed from the view of structure–property relationship. Copyright © 2009 John Wiley & Sons, Ltd. 相似文献
223.
Silicon-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films were grown by plasma enhanced chemical vapor deposition (PECVD) with different r=NH3/SiH4 gas flow ratios. The optical absorption characteristics were analyzed by Fourier transform infrared (FTIR) and UV-visible transmittance spectroscopies. The recombination properties were investigated via photoluminescence (PL) measurements. As r was increased from 2 to 9, the PL emission color could be adjusted from red to blue with the emission intensity high enough to be perceived by naked eye at room temperature. The behaviors of the PL peak energy and the PL band broadness with respect to the optical constants were discussed in the frame of electron-phonon coupling and band tail recombination models. A semiquantitative analysis supported the band tail recombination model, where the recombination was found to be favored when the carriers thermalize to an energy level at which the band tail density of states (DOS) reduces to some fraction of the relevant band edge DOS. For the PL efficiency comparison of the samples with different nitrogen contents, the PL intensity was corrected for the absorbed intensity fraction of the incident PL excitation source. The resulted correlation between the PL efficiency and the subgap absorption tail width further supported the band tail recombination model. 相似文献
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By using first-principles density functional theory, we investigate the charge distribution of a potassium-doped layered combined system of graphene and hexagonal boron nitride. Two configurations of potassium-doped hexagonal boron nitride layers on graphenes and the reverse geometry of graphenes on hexagonal boron nitride layers are considered. We find that the charge distribution exhibits different features in these two situations. In the former case, the outmost hexagonal boron nitride layer cannot screen the external charges offered by potassium atom completely and most of the transferred charges reside on the two bounding layers. In contrary, the outmost graphene layer near the potassium atom can accept almost all of the transferred charges and only a few of them stay at interior layers in the latter case. A more amazing result is that the characteristics of charge transfer are independent of the number of hexagonal boron nitride layers and graphenes. 相似文献
226.
Mahesh Kumar Mohana K. RajpalkeBasanta Roul Thirumaleshwara N. BhatNeeraj Sinha A.T. KalghatgiS.B. Krupanidhi 《Applied Surface Science》2011,257(6):2107-2110
Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). 相似文献
227.
Structural and optical properties of RF magnetron sputtered aluminum nitride films without external substrate heating 总被引:1,自引:0,他引:1
Atul Vir Singh Sudhir ChandraA.K. Srivastava B.R. ChakrobortyG. Sehgal M.K. DalaiG. Bose 《Applied Surface Science》2011,257(22):9568-9573
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magnetron sputtering. A ceramic AlN target was used to sputter deposit AlN films without external substrate heating in Ar-N2 (1:1) ambient. The X-ray diffraction and high resolution transmission electron microscopy results revealed that the films were preferentially oriented along c-axis. Cross-sectional imaging revealed columnar growth perpendicular to the substrate. The secondary ion mass spectroscopy analysis confirmed that aluminum and nitrogen distribution was uniform within the thickness of the film. The optical band gap of 5.3 eV was evaluated by UV-vis spectroscopy. Photo-luminescence broad band was observed in the range of 420-600 nm with two maxima, centered at 433 nm and 466 nm wavelengths related to the energy states originated during the film growth. A structural property correlation has been carried out to explore the possible application of such important well oriented nano-structured two-dimensional semiconducting objects. 相似文献
228.
Surface plasmon enhanced light emission of silicon-rich silicon nitride: Dependence on metal island size 总被引:1,自引:0,他引:1
Surface plasmon coupled light emission of silicon-rich silicon nitride (SRSN) was investigated as a function of metal island size. It was found that the emission intensity was enhanced by surface plasmon (SP) and the enhancement factors increase greatly with the increase of metal island size. Moreover, SP coupled emission spectral shape was found also correlating with Ag island size. By calculating the extinction characteristics of the Ag islands, it was believed that SP scattering and absorption efficiency of the metal islands decide the photoluminescence (PL) changes including emission intensity enhancement and band position shift. 相似文献
229.
Rafael González-Hernández William López PérezJairo Arbey Rodríguez M. 《Applied Surface Science》2011,257(14):6016-6020
In this work, we have investigated by means of first-principles spin-polarized calculations, the electronic and magnetic properties of iron (Fe) adsorption and diffusion on the GaN(0 0 0 1) surface using density functional theory (DFT) within a plane-wave pseudopotential scheme. In the surface adsorption study, results show that the most stable positions of a Fe adatom on GaN(0 0 0 1) surface are the H3 sites and T4 sites, for low and high Fe coverage respectively. We found that the Fe-H3 2 × 2 surface reconstruction exhibits a half-metallic behavior with a spin band gap and stable ferromagnetism ordering, which is a desirable property for high-efficiency magnetoelectronic devices. In addition, confirming previous experimental results, we found that the iron monolayers present a ferromagnetic order and a large thermal stability. This is interesting from a theoretical point of view and for its technological applications. 相似文献
230.
Waheed S. KhanChuanbao Cao Faheem K. ButtZulfiqar Ali M. SafdarLiqing Pan M. Yasir RafiqueQurrat ul Ain Zahid UsmanGhulam Nabi 《Applied Surface Science》2011,257(16):7314-7319
We report here the evolution of zinc based high purity phases with novel morphologies such as Zn3N2 hollow structures, ZnO nanowires and nanopowders, as well as metallic Zn layered hexagonal microparticles at progressively increased reaction temperature of 600 °C, 700 °C, 800 °C under NH3 gas atmosphere using Zn powder precursor and keeping all other experimental parameters unchanged. Growth mechanism for Zn3N2 obtained by nitridation, ZnO by oxidation and Zn microparticles via thermal evaporation & condensation process are discussed briefly. The as-synthesized products were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM). Photoluminescence (PL) studies have revealed very interesting and infrequently observed emission bands at 378 and 661 nm for Zn3N2, 359 and 396 nm for ZnO as well as 389 nm for Zn polyhedral microparticles. 相似文献