On phase diagrams and on cBN formation in the system BN-Ca3B2N4

Abstract

The phase diagrams of Ca₃B₂N₄ and of the system BN-Ca₃B₂N₄ has been studied by high pressure differential thermal analysis Ca₃B₂N₄ has 3 structural phases and melts at higher temperature. The system BN-Ca₃B₂N₄ formes an eutectic melt and cBN is synthesized by nucleation and crystal growth.     

Aktivierungsanalytische Untersuchung von Zirkoniumlegierungen

Durch Aktivierungsanalyse mit Reaktorneutronen (zerstörungsfrei und mit chemischer Aufarbeitung) sowie mittels zerstörungsfreier Untersuchungen an einem Neutronengenerator wurden O, Al, Si, P, Mn, Cu, Nb, Mo, Cd, Ti, Cr und Hf in Zirkoniumlegierungen bestimmt.     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Valence band and band gap photoemission study of (1 1 1) In2O3 epitaxial films under interactions with oxygen, water and carbon monoxide

Synchrotron radiation ultraviolet photoemission experiments at photon energies of 150 and 49 eV were performed on an epitaxial layer of (1 1 1) In₂O₃ with good crystallinity as established by a standard scanning probe and diffraction methods. Valence band (VB) and band gap photoemission spectra were monitored under separate oxygen, water and carbon monoxide exposures (100 L) at different activation temperatures within the range utilized for chemiresistive gas sensors (160-450 °C). Large changes in photoemission response within the whole VB were observed for all gases. Regular shifts of the valence band edge relative to the Fermi energy were found under gas exposures on two kinds of surface (partially reduced or partially oxidized), and are interpreted as changes of surface potential. Treatments in oxygen resulted in upward band bending (∼0.5 eV at T = 320 °C). Regardless of activation temperature, treatments in water resulted in downward band bending, but with small changes (<0.1 eV). Reduction properties of carbon monoxide were observed only at high temperatures of T ? 370 °C. At temperatures of 160 and 250 °C unusual “oxidizing” behavior of CO was observed with upward band bending of ∼0.7 eV (160 °C). Oxidizing and reducing effects of the gas interactions with the (1 1 1) In₂O₃ surface in all cases were accompanied by a corresponding behavior, i.e., a decrease or increase in photoemission response from so-called defect states in the band gap near the top of the valence band. The increases of photoemission within a band gap with maxima at binding energies (BE) of 0.4 (O₂-induced peak) and 1.0 eV (CO-induced peak) were, respectively, found for interactions with O₂ and CO for low temperatures (T = 160 and 250 °C). These responses were ascribed to acceptor-like electronic levels of O₂ and CO chemisorption states, respectively. A definite split of the top VB peak (BE ∼ 4.0 eV) was found under CO dosing at 160 °C. Established knowledge of the CO interaction with the (1 1 1) In₂O₃ surface explains earlier revealed acceptor-like behavior of In₂O₃ film conductivity during CO detection at operational temperatures lower than 250 °C through the formation of acceptor-like electronic levels of adsorbed CO molecules.     

Low voltage electrodeposition of CNx films and study of the effect of the deposition voltage on bonding configurations

Carbon nitride (CN_x) films were deposited from acetonitrile at low voltage (150-450 V) through electrodeposition. The films were characterized by atomic force microscopy (AFM), Raman spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. AFM investigations revealed that the grain size was ∼200 nm and roughness was ∼10 nm. The films were found to be continuous and close packed. IR spectra revealed existence of strong sp³, sp² type bonding and weak sp type carbon nitrogen bonds and these bonds were found to increase with voltage. The fraction of sp³-bonded species in the sample increased in low voltage range and after reaching maximum at 350 V, decreased for higher voltages. However, the concentration of sp² CN ring structures in the film increased with increasing voltage. Also, the peak width decreased at low voltages reaching a minimum and increased thereafter. It was observed that the voltage dependent increase in the concentration of polymeric type sp² CN (chain) structures was much more pronounced than that of graphitic type sp² CN (ring) structures. Raman spectra showed the presence of both the D and G bands. The shift in the G band indicated the presence of nitrogen in the film. The I_D/I_G ratio was found to increase with the incorporation of nitrogen. Auger electron spectroscopy (AES) showed a clear increase in the nitrogen content with increase in the voltage. The formation of the film could be explained on the basis of dissociation of electrolyte under applied voltage.     

Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers

Results on time-resolved study of GaN photoluminescence (PL) in a power density range from 0.5 mW/cm² under CW excitation by ultraviolet light emitting diode (UV LED) to 1 GW/cm² under pulsed excitation by YAG:Nd laser in the temperature range from 8 to 300 K are presented. Measurements of PL response in the frequency domain by using amplitude-modulated emission of a UV LED as well as time-resolved PL measurements using a streak camera and light-induced transient grating technique have been used in the study. Yellow luminescence (YL) intensity increases with increasing temperature up to 120 K and faster components in YL decay switch to slower components with increasing temperature under UV LED excitation. At low carrier densities, the trapping decreases the carrier lifetime below 250 ps, while the carrier lifetime in the same GaN sample under excitation ensuring saturation of the traps equals 2 ns.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.     

非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响

通过调整非故意掺杂氮化镓层的厚度,分析氮化镓基LED外延生长过程中应力的演变行为,以控制外延片表面的翘曲程度,从而获得高均匀性与一致性的外延片。由于衬底与外延层之间的热膨胀系数差别较大,在生长温度不断变化的过程中,外延片的翘曲状态也随之改变。在n型氮化镓生长结束时,外延片处于凹面变形状态。在随后的过程中,外延薄膜"凹面"变形程度不断减小,甚至转变为"凸面"变形,所以n型氮化镓生长结束时外延片的变形程度会直接影响多量子阱沉积时外延片的翘曲状态。当非掺杂氮化镓沉积厚度为3.63μm时,外延片在n型氮化镓层生长结束时变形程度最大,在沉积多量子阱时表面最为平整,这与PLmapping测试所得波长分布以及标准差值最小相一致。通过合理控制非故意掺杂氮化镓层的厚度以调节外延层中的应力状态,可获得均匀性与一致性良好的LED外延片。     

二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。