Influence of Phosphorus Doping Level and Acid Pretreatment on the Voltammetric Behavior of Phosphorus Incorporated Tetrahedral Amorphous Carbon Film Electrodes

Phosphorus incorporated tetrahedral amorphous carbon (ta‐C:P) films are prepared by filtered cathodic vacuum arc technology with phosphine as the dopant. The influence of phosphorus doping level and acid pretreatment on the electrochemical properties of ta‐C:P electrodes is investigated by cyclic voltammetry, Raman spectroscopy and X‐ray photoemission spectroscopy. Results indicate that phosphorus incorporation improves the electrical and electrochemical behaviors of the films. A moderate phosphorus atomic fraction facilitates the interfacial electron transport in context of a high content of effective phosphorus impurities. Furthermore, acid pretreatment activates the surface of the films and gives an excellent reversible feature towards ferricyanide oxidation reaction by removing the inactive oxygenated sites and exposing the active conduction channels.     

Synthesis of photolabile dUTP analogues and their enzymatic incorporation for DNA labeling

<正>~~     

Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.     

Incorporating polymers within a single-crystal: From heterogeneous structure to multiple functions

Single-crystals, commonly considered as homogeneous solids, are able to be internally interfaced abnormally with guest polymers, which can be found in the biominerals where single-crystals incorporate surrounding biomacromolecules to reinforce their mechanical properties. This unique feature combining heterogeneous structure and long-range atomic ordering have attracted abundant investigations of reproducing their synthetic analogs to expand the potential application scope. Here, we summarize the recent progresses in the synthetic single-crystal composites, where polymer guests are incorporated inside single-crystals to generate heterogeneous structures without interruption to the long-range ordering of crystal hosts. First, the uniform and patterned encapsulations inside the various single-crystals are concluded in the sequence of isolated and continuous polymer-based guests. In addition, the mechanisms are classified chemically and physically, and the corresponding controlled factors that govern the incorporation processes are discussed. Most importantly, typical attempts on the applications of these heterogeneous single crystals are introduced, including mechanical reinforcement, bandgap engineering, catalyst, self-healing, controlled release, and optoelectronic devices. We aim at stressing on the current and potential applications benefited from the unique structural properties of the polymer incorporated single-crystals, and accordingly propose the perspectives to accelerate the path from the structural analysis toward prosperous functions.     

UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

An evaluation of a low temperature method (∼400 °C) for synthesis of nitrogen incorporated hafnia gate dielectric has been reported. This method is based on metal film growth in ammonia ambient and subsequent oxidation under ultraviolet (UV) irradiation. X-ray photoelectronic spectroscopy confirmed the presence of nitrided interface layer with a thickness of ∼12 ?. Equivalent oxide thickness values of around 11.5 ? and leakage current densities lower than 1 × 10⁻⁴ A/cm² at an operation voltage (−1 V) were achieved. The post deposition ultraviolet oxidation process was performed to check the interface oxidation resistance. The interface growth rate showed that as the interface bonding characteristics changed from Si-N to Si-O predominant bonding system of nitrogen incorporated films, the activation energy for oxygen diffusion changed from 18.0 kJ/mol to 9.8 kJ/mol and the activation energy of undoped hafnia films was 2.3 kJ/mol in every growth region.     

Effect of Isomorphic Incorporation of Titanium on the Structure and Absorption Properties of VPI-8 Zeolites

We have synthesized titanium silicate analogs of VPI-8 zeolite with a broad range of ratios of Si and Ti atoms. We have shown that introduction of titanium into the zeolite lattice is accompanied by an increase in the unit cell parameter from 13.05 to 14.85 , and also an increase in the sorption capacity and a decrease in the characteristic methanol adsorption energy. X-ray phase analysis, IR and UV spectroscopy have confirmed the isomorphic incorporation of Ti in a tetrahedral environment into the structure of VPI-8 zeolite, up to Ti/(Si+Ti) = 0.05.     

Optical second-harmonic generation study of incorporation of nitrogen atoms at Si(1 0 0) surfaces

The kinetics of N incorporation into Si layers has been studied on the Si(1 0 0) surface probing surface dangling bonds with an optical second-harmonic (SH) generation during surface exposure to N atoms generated by a radio frequency N₂ plasma. It is observed that SH intensity decreases with N dose. The rate of decrease in SH intensity apparently decreases with surface temperature, whereas total amount of N atoms taken on the surface remains constant. This fact suggests that N atoms are incorporated at the subsurface layers at higher temperatures. It is shown that the N incorporation at the subsurface layers proceeds by the indiffusion of N atoms either directly or indirectly via intermediate, metastable adsorption at the first surface layer. Applying Kisliuk adsorption model, activation energies of the N indiffusion are evaluated to be 0.30 ± 0.03 and 0.34 ± 0.05 eV for the indirect and direct path, respectively.     

Impact of high N2 flow ratio on the chemical and morphological characteristics of sputtered N‐DLC films

Because of their outstanding characteristics, diamond‐like carbon (DLC) thin films have been recognized as interesting materials for a variety of applications. For this reason, the effects of the incorporation of different elements on their fundamental properties have been the focus of many studies. In this work, nitrogen‐incorporated DLC films were deposited on Si (100) substrates by DC magnetron sputtering of a graphite target under a variable N₂ gas flow rate in CH₄ + N₂ + Ar gas mixtures. The influence of high N₂ flow ratios (20, 40 and 60%) on the chemical, structural and morphological properties of N‐DLC films was investigated. Different techniques including field emission gun‐equipped scanning electron microscope (FEG‐SEM), energy‐dispersive X‐ray spectroscopy (EDS), atomic force microscopy (AFM), profilometry, Rutherford backscattering spectrometry (RBS) and Raman spectroscopy (325‐nm and 514‐nm excitation) were used to examine the properties of the N‐DLC films. Thus, the incorporation of nitrogen was correlated with the morphology, roughness, thickness, structure and chemical bonding of the films. Overall, the results obtained indicate that the fundamental properties of N‐DLC films are not only related to the nitrogen content in the film but also to the type of chemical bonds formed. Copyright © 2016 John Wiley & Sons, Ltd.     

Incorporation of Ions into Nanostructured Anodic Oxides—Mechanism and Functionalities

Anodic oxidation of metals leads to the formation of ordered nanoporous or nanotubular oxide layers that contribute to numerous existing and emerging applications. However, there are still numerous fundamental aspects of anodizing that have to be well understood and require deeper understanding. Anodization of metals is accompanied by the inevitable phenomenon of anion incorporation, which is discussed in detail in this review. Additionally, the influence of anion incorporation into anodic alumina and its impact on various properties is elaborated. The literature reports on the impact of the incorporated electrolyte anions on photoluminescence, galvanoluminescence and refractive index of anodic alumina are analyzed. Additionally, the influence of the type and amount of the incorporated anions on the chemical properties of anodic alumina, based on the literature data, was also shown to be important. The role of fluoride anions in d-electronic metal anodizing is shown to be important in the formation of nanostructured morphology. Additionally, the impact of incorporated anionic species, such as ruthenites, and their influence on anodic oxides formation, such as titania, reveals how the phenomenon of anion incorporation can be beneficial.     

钇掺杂介孔氧化锆材料的合成与表征

近年来一种新型纳米结构材料-介孔材料引起越来越广泛的兴趣。作者利用表 面活性剂辅助模板及后处理工艺成功实现了过渡金属钇在有序介孔氧化锆骨架中的 掺杂改性。借助XRD，TEM，EDS和荧光光谱以及紫外-可见吸收等分析手段进行样品 结构及性能表征。研究结果表明，金属钇离子能均匀地掺杂于规则的介孔氧化锆骨 架中。掺杂改性后的介孔氧化锆试样经激发后室温下呈现特殊的荧光（蓝光）发射 现象，并认为这种荧光响应与钇掺杂氧化锆产生氧空位缺陷有关。