Improved Conductivity Induced by Photodesorption in SnO2 Thin Films Grown by a Sol-Gel Dip Coating Technique

Thin films of undoped and Sb-doped SnO2 have been prepared by a sol-gel dip-coating technique. For the high doping level (2–3 mol% Sb) n-type degenerate conduction is expected, however, measurements of resistance as a function of temperature show that doped samples exhibit strong electron trapping, with capture levels at 39 and 81 meV. Heating in a vacuum and irradiation with UV monochromatic light (305 nm) improves the electrical characteristics, decreasing the carrier capture at low temperature. This suggests an oxygen related level, which can be eliminated by a photodesorption process. Absorption spectral dependence indicates an indirect bandgap transition with Eg 3.5 eV. Current-voltage characteristics indicate a thermionic emission mechanism through interfacial states.     

钢中晶界区稀土稀土元素与杂质交互作用的电子理论研究

利用位错模型构造纯净的和稀土及杂质偏聚的晶界模型 ,用Recursion方法研究了稀土与杂质的交互作用对Fe 5 .3°小角度晶界的结合性质的影响。环境敏感镶嵌能和键级积分 (BOI)的计算结果表明 :钢中同时存在稀土和杂质时 ,稀土首先偏聚于晶界。稀土偏聚于晶界时 ,起到加强晶界的作用 ;杂质偏聚于晶界时却起到脆化的作用。钢中加入适量的稀土 ,既净化晶界 ,又提高钢的强度。这一结果从电子层次解释了稀土在钢中的作用机制 ,为稀土在钢中的应用提供了理论依据     

丙烯腈中微量杂质的毛细管色谱法分析

提出了一种分析丙烯腈中微量杂质的大孔径ＯＶ－１０１和ＯＶ－１７ＳＣＯＴ串联柱及毛细管进样系统。结果表明串联柱具有寿命长和分离效率高的特点,定量分析误差小于４％。     

离子色谱法在氢燃料电池汽车用氢气中的应用现状及展望

氢燃料电池汽车用氢气中痕量杂质会影响氢燃料电池的性能,国内外标准均严格规定了痕量杂质的限值要求。离子色谱法（IC） 具有操作简单、分析快速、灵敏度高、选择性好、可多组分检测的特点,ISO 14687－2∶2012、SAE J2719∶2015和GB/T 37244－2018等标准均涉及到离子色谱法分析其中的部分指标。目前离子色谱法在环境空气、固定污染源废气、天然气、烟气等气体分析领域有广泛应用,在氢燃料杂质的分析领域尚在起步阶段。该文综述了氢燃料和其他气体分析领域中总卤化物、甲酸、氨和总硫化物的分析方法,将离子色谱与不同分析技术进行比较。并基于离子色谱在其他气体杂质分析领域的应用进展,对其在氢燃料电池汽车用氢气杂质分析中的应用作出展望。     

Quantification of Trace Amounts of Impurities in High Purity Cobalt by High Resolution Inductively Coupled Plasma Mass Spectrometry

Cobalt metal has been used in the production of magnetic alloys, cobalt and nickel based superalloys and sputtering targets in the field of advanced electronic devices1. The determination of trace impurities in high purity cobalt is extremely important be…     

Disruption mitigation using laser ablation of high-Z impurities in HL-1M tokamak

A preliminary experiment triggering a plasma current quench by laser ablation of high-Z impurities has been performed in the HL-1M tokamak. The injection of impurities with higher electric charges into tokamak plasmas can increase the radiation cooling of the plasma. Resistive, highly radiating plasma formed prior to the thermal quench can dissipate both the thermal and magnetic energies, which is possibly a simple and potential approach to reducing significantly the plasma thermal energy and magnetic energy before a disruption thereby a safe plasma termination is obtained.     

Effects of divalent impurities on the fluctuation conductivity of YBa2Cu3O7 single crystals

We have studied experimentally the in-plane fluctuation conductivity near the superconducting transition in single crystal samples of YBa₂Cu₃O₇, Y_0.98Ca_0.02Ba₂Cu₃O₇, YBa_1.9Sr_0.1Cu₃O₇ and YBa₂Cu_2.97Zn_0.03O₇. In order to test the stability of the observed fluctuation regimes, low magnetic fields were applied perpendicular to the Cu-O₂ atomic planes. When the transition is approached from above we first observe a three-dimensional (3D) Gaussian regime then a crossover to a genuine critical region where the exponent is consistent with the predictions of the 3D-XY-E universality class. Decreasing further the temperature towards T_c, our results systematically reveal the occurrence of a regime beyond 3D-XY characterized by a very small critical exponent. We propose that this regime is precursory to a weak first-order superconducting transition driven by antiferromagnetic excitations related to the pseudogap phenomenon. The dilution of divalent impurities in YBa₂Cu₃O₇ does not affect the stability of the fluctuation regime beyond 3D-XY and in the case of Ca doping a further approach towards the first-order behaviour is observed.     

Mössbauer Study of Microstructure and Magnetic Properties (Co,Ni)–Zr Substituted Ba Ferrite Particles

The β-NMR of short-lived β-emitter in a rutile TiO₂ single crystal has been measured as functions of temperature and external magnetic field. Atomic motion induced spin lattice relaxation was observed for two known sites, O substitutional and interstitial sites. The data were analyzed in terms of the thermal atomic jump, which suggests that the motion of defects around the substitutional ¹²N atom for O, and of the interstitial ¹²N atom are attributed to the spin lattice relaxation. The electric field gradients have shown temperature dependence for both sites, which is probably due to the thermal expansion of rutile.     

Preparation of photovoltaic silicon by purification of metallurgical grade silicon with a reactive plasma process

The main methods of silicon purification involve physicochemical techniques of separation. They yield an ultrapure metal, but its price is not compatible with photovoltaic central power generation. The plasma zone melting process consists in the horizontal displacement of a melted zone under an argon-hydrogen-oxygen plasma. The melt zone is characterized by a vertical gradient of concentration and temperature which drains impurities toward the upper surface of the bar. Moreover, the displacement of the zone from the head to the tail of the bar ensures a horizontal drainage of impurities toward the tail. This technique has been used with success for purification of metallurgical grade silicon; for example, iron was reduced from 3500 ppm to 0.5 ppm at a displacement rate between 20 and 40 cm/h. The final impurity level was less than 1 ppm. The mass transfer was independent of the displacement rate at 40 cm/h, but dependent on the heat transfer rate. The segregation of the metals is caused by drainage toward the tail of the bar, while the plasma vaporizes impurities since the metallic and metalloidic impurities have high vapor pressures (e.g., S, P, C, O, Mn). Acid (HF-HNO₃) is used to dissolve the impurities between each passage of the zone. Boron elimination depends directly on the plasma oxygen concentration. Classical mathematic models of zone melting are not valid for plasma melting zone processes.