Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征

本文对InGaN/GaN多量子阱结构发光二极管开启后的电流噪声进行了测试, 结合低频电流噪声的特点和载流子之间的复合机理, 研究了低频电流噪声功率谱密度与发光二极管发光转变机理之间的关系. 结论表明, 当电流从0.1 mA到10 mA逐渐增大的过程中, InGaN/GaN发光二极管的电流噪声行为从产生-复合噪声逐渐接近于低频1/f噪声, 载流子的复合机理从非辐射复合过渡为电子与空穴之间载流子数的辐射复合, 并具有标准1/f噪声的趋势, 此时多量子阱中的电子和空穴之间的复合趋向于稳定. 本文的结论提供了一种表征InGaN/GaN多量子阱发光二极管发光机理转变的有效方法, 为进一步研究发光二极管中载流子的复合机理、优化和设计发光二极管、提高其发光量子效率提供理论依据.     

Recombination and transfer annealing of neutron irradiated and 60Co(II)-doped Ba/CoEDTA/2

Abstract

Kinetics of post recoil isothermal annealing of crystalline Ba/CoEDTA/₂ irradiated in a nuclear reactor or doped by ⁶⁰Co(II) reveals a combination of a monotonous and an oscillatory part amounting 1-3% of the total. The permanent recombination has been found to consist of two first order processes leading to the octahedral structure of the six-co-ordinated ⁶⁰Co(III).     

The effect of configuration complex on dielectronic recombination process in highly ionized plasmas

This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.     

The dynamics of triple-well trapped Bose-Einstein condensates with atoms feeding and loss effects

In this paper, we consider the macroscopic quantum tunnelling and self-trapping phenomena of Bose-Einstein condensates （BECs） with three-body recombination losses and atoms feeding from thermal cloud in triple-well potential. Using the three-mode approximation, three coupled Gross-Pitaevskii equations （GPEs）, which describe the dynamics of the system, are obtained. The corresponding numerical results reveal some interesting characteristics of BECs for different scattering lengths. The self-trapping and quantum tunnelling both are found in zero-phase and ：r-phase modes. Furthermore, we observe the quantum beating phenomenon and the resonance character during the self-trapping and quantum tunnelling. It is also shown that the initial phase has a significant effect on the dynamics of the system.     

Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots

Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots （QDs） were investigated by two-colour femtosecond （fs） pump-probe （400/800 nm） and picosecond time-resolved photoluminescence （ps TRPL） experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model.     

Heterogeneous Chemiluminescence of Crystal Phosphors on X‐Ray or UV Irradiation

Using a highvacuum assembly with molecular beams and setups with an implemented atom probe, we investigated atomic and molecular adsorption luminescence of the oxides CaOBi and MgO in O and O₂ beams and also radicalrecombination luminescence excited by H and O atoms in ZnS and in ZnS,CdS samples activated with silver, copper, and the rareearth element Tm. It is established that exposure to UV light and xray radiation of the CaOBi, MgO, and ZnSTm samples, where the mechanism of direct excitation of heterogeneous chemiluminescence (HCL) is realized, does not influence the characteristics of the heterogeneous chemiluminescence, whereas similar exposure of the ZnS,CdSCu,Al and ZnS,CdSAg samples and of selfactivated ZnS, in which the excitation of heterogeneous chemiluminescence is due to the ionization of the lattice, leads to an increase in the intensity of heterogeneous chemiluminescence up to five orders of magnitude. The mechanisms of the phenomenon are considered.     

Structure and Photoelectric Characteristics of Functional Polymers and of Compositions Based on Them

The electronic processes in disordered organic solids were analyzed, classified, and summarized. They include the photogeneration of charge pairs, electron transport, geminal and bimolecular recombination, and the capture of charge carriers in local electronic states. General criteria were formulated for the targeted search for and the creation of new prospective polymers and their compositions with organic pigments and related compounds having specific photoelectric characteristics for electrographic and holographic media, photoelectric converters, and electroluminescent and photorefractive devices.