Photo-initiated base-formation in a polymer matrix

It was found that amines were formed efficiently by the photolysis of O-acyloximes followed by hydrolysis in polystyrene films and the relationship between structures of O-acyloximes and yields of amines were investigated. O-phenylacetyl acetophenone oxime (PaApO), O-pivaloyl acetophenone oxime (PApO), and O-benzoyl acetophenone oxime (BApO) as monofunctional O-acyloximes and O,O′-succinyl diacetophenone oxime (SDApO) and O,O′-glutaryl diacetophenone oxime (GDApO) as bifunctional O-acyloximes were examined. The yields of amines for PaApO and SDApO under N₂ were ca. 70%, which was the highest among O-acyloximes examined in this experiment. On the other hand, the yields for PApO, BApO, and GDApO were less than 15% and it was verified that the hydrogen abstraction by imino radicals via 6-membered cyclic intermediates resulted in the lowering of yields. Although the effect of oxygen under photolysis on the yields of amine for PaApO was negligible under 50% conversion of PaApO, the yield decreased with further increase in the conversion and was 50% at 90% conversion. © 1994 John Wiley & Sons, Inc.     

Stereoselective formation of ansa-metallocenes in reactions of radical-anionic salts of acenaphthylene with lanthanide and calcium halides

ansa-Metallocenes (⁵:⁵-C₂₄H₁₆)M(THF)₂ (M = Sm (1), Yb (2), Ca (3)) and (⁵:⁵-C₂₄H₁₆)MI(THF) (M = Dy (8), Er (9), Tm (10), Lu (11)) were prepared in 50—90% yields by the in situ reactions of two equivalents of potassium acenaphthylenide K⁺C₁₂H₈ ^– with MI₂ or MI₃, respectively. Complexes 2 and 3 were also obtained by direct reduction of acenaphthylene with ytterbium and calcium naphthalenides, respectively. An ESR signal of the acenaphthylene radical anion, which was observed upon dissolution of compound 2 in THF, indicates that the [C₂₄H₁₆]^2– ansa-ligand dissociated into two [C₁₂H₈]^·– radical anions. Hydrolysis of complex 2 in benzene afforded 1,1",3,3"-tetrahydro-3,3"-biacenaphthylene (4) and 3,3",4,4"-tetrahydro-3,3"-biacenaphthylene (5). The reaction of complex 2 with ZrCl₄ and the reaction of compound 3 with Me₃SiCl proceeded with the cleavage of the C—C bond between two acenaphthylene fragments of the [C₂₄H₁₆]^2– ansa-ligand to produce (²-C₁₂H₈)ZrCl₂(THF)₃ (6) and bis(trimethylsilyl)acenaphthene (Me₃Si)₂C₁₂H₈ (7), respectively. Compounds 1—3, 6, 7, and 11 were characterized by ¹H and ¹³C NMR spectroscopy. The temperature dependence of the ¹H NMR spectrum of compound 11 in tetrahydrofuran is indicative of the dynamic exchange of the solvent molecules in the coordination sphere of the Lu atom. After cooling of the solution to 210 K, the dynamic process was terminated as evidenced by the nonequivalence of the ¹H signals of two acenaphthylene fragments. According to the X-ray diffraction data for complex 11, dimerization of two acenaphthylene radical anions at the Lu atom gave rise to the rac-ansa-metallocene structure. In compound 11, the Lu atom is ⁵-coordinated by two five-membered rings of the acenaphthylene ligands and also by the I atom and the THF molecule. The coordination environment about the Lu atom is a distorted tetrahedron. The average distance between the lutetium atom and the carbon atoms of the five-membered rings is 2.623 .     

Effect of Thiourea on the Kinetics of the Hydrogen Evolution Reaction at Iron and the Transport of Hydrogen through a Steel Membrane in Solutions of C<Subscript>2</Subscript>H<Subscript>4</Subscript>(OH)<Subscript>2</Subscript>-H<Subscript>2</Subscript>O-HCl

The effect of thiourea (0.5–10 mM) on the kinetics of the hydrogen evolution reaction (HER) at iron and the hydrogen transport through a steel membrane out of ethylene glycol (containing 2 and 10 wt % H₂O) and aqueous solutions containing HCl (0.1–0.99 M) with a constant ionic strength equal to unity is studied in parallel experiments. The presence of 0.5 mM of thiourea in the solutions raises the overvoltage of hydrogen evolution, while a subsequent increase in its concentration does not effect the HER kinetics. The dependence of the flux of hydrogen diffusion through the membrane on the thiourea content passes through a maximum.     

Surface recombination in breakdown time delay experiments: Effect of different cathode materials

The late afterglow in nitrogen with iron electrode is studied by the breakdown time delay method, i.e., by measuring the breakdown time delay t_d as a function of the afterglow time . It is proposed that the cause of the secondary electrons initiating the breakdown is the energy of the surface recombination of nitrogen atoms on the iron electrode. The gas-phase and macrokinetic diffusive models are used to describe the experimental breakdown time delay data. By fitting the theoretical curve to the experimental data: (1) it has been confirmed that the recombination on the molybdenum glass is of the second order and the value of the surface recombination coefficient is determined at 4 mbar; (2) it has been shown that the surface recombination on the iron electrode is of the second order, and the effective recombination coefficients are determined; (3) the analytical form of the recombination coefficient as a function of the adsorption characteristics of surfaces and the pressure of the parent gas has been derived. In addition, the orders of surface recombination on the molybdenum-, aluminum-, and gold-plated electrode were determined by the same method.     

Monte—Carlo model of the diffusion-limited reaction kinetics in microheterogeneous media. Comparison with the experimental plots of the forward and backward electron phototransfer kinetics on the pore diameter in silica gel

The kinetics of the diffusion-limited decay reaction A + B B was simulated by the Monte—Carlo method on a two-dimensional square lattice with defects presented by randomly distributed sites. The cases were considered where [B] [A] at the random initial distribution (quenching reaction) and [B] = [A] with the initial distribution of the A and B particles on neighboring sites (geminate recombination). The kinetic curves were approximated by the simplest analytical equation [A]/[A]₀ = (1 – )exp[–(kt)^1–h ] + (where k and are constants). The plots of the heterogeneity parameter (h) and time-averaged first-order rate constant vs. concentration of defects (p) or B particles (in the case of quenching) were obtained and compared with similar correlations obtained earlier by the experimental study of the kinetics of forward (quenching reaction) and backward (geminate recombination) electron phototransfer on the surface of different porous silica gels. The experimental plots of h vs. silica gel porosity are in satisfactory agreement with the plots of h vs. p in the model space, if the fraction of volume inaccessible for reactants, calculated from the free silica gel volume, is chosen as the p parameter for silica gel.Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1536–1541, August, 2004.     

Acetone cation chemistry under varying electron density conditions: from unimolecular decomposition to dissociative recombination processes

The chemistry of ionized acetone:Ar mixtures under varied ionizing electron density conditions has been studied using matrix‐isolation techniques. Gaseous acetone diluted in excess argon gas was subjected to electron bombardment with 300 eV electrons at currents between 20 and 200 μA. Linear wire ‘pin’ and metal ‘plate’ electron collector geometries were employed, allowing a wide range of electron density conditions to be explored. The products of subsequent reaction processes were matrix isolated and analyzed by Fourier transform infrared absorption spectroscopy. Products included methane, ketene, 1‐propen‐2‐ol (the enol isomer of acetone), CO, HCO, ethane, ethane, acetylene and CCCO. Product absolute and relative yields varied with acetone number density, the choice of anode geometry and the rate of electron bombardment. The overall chemistry observed is rationalized in terms of mechanistic steps involving unimolecular cation decomposition, ion–molecule reactions, radical–radical reactions and dissociative recombination processes. Copyright © 2013 John Wiley & Sons, Ltd.     

nc-Ge/SiN_x多层膜的光致发光特性

通过将a-Ge∶H/a-SiN_x多层膜进行氧化,制备了nc-Ge/SiN_x多层膜。观察到了室温下的强烈可见光发射,发光波长为500nm。通过分析,排除了与量子限制效应有关的光发射机制,也排除了与Si和N相关的缺陷产生的复合机制,认为该发光源于氧化后的a-SiN_x介质层中带尾态之间的辐射复合,最有效的激发能量约为介质层的带隙。     

N3/Al2O3/N749交替组装结构拓宽准固态染料敏化太阳能电池光响应范围和界面修饰效果

研究了染料敏化太阳能电池(DSCs)中N3/Al₂O₃/N749交替组装结构的作用. 该结构使用Al₂O₃作为介质层吸附第二层染料, 可以有效拓宽DSCs的光响应范围, 提高电池的光电转化效率. UV-Vis 吸收光谱和单色光转换效率(IPCE)谱测试结果表明, 相对于单一染料, 使用交替组装结构的电池光响应范围变宽. 电流-电压(I-V)曲线结果表明, 该结构有效增加了DSCs 电池的光电转化效率, 从单一N3 和N749 染料的4.22%和3.09%增加到了5.75%, 分别增加了36%和86%. 为了研究该结构的作用机理, 本文对其界面修饰作用及界面电子过程进行了讨论. 暗电流测试结果表明交替组装结构可以有效阻止电荷复合过程; 电化学阻抗谱(EIS)结果表明在黑暗条件下, N3/Al₂O₃/N749结构可以提高界面电阻, 从而抑制电荷复合过程; 本文建立了等效电路模型, 并使用该模型讨论了交替组装结构的界面电子过程; 调制强度光电流谱(IMPS)和调制强度光电压谱(IMVS)的结果表明该结构可以提高电子寿命和改善电子扩散.     

A two‐step reaction scheme leading to singlet carbene species that can be detected under matrix conditions for the reaction of Zr(3F) with either CH3F or CH3CN

The results obtained from CASSCF‐MRMP2 calculations are used to rationalize the singlet complexes detected under matrix‐isolation conditions for the reactions of laser‐ablated Zr(³F) atoms with the CH₃F and CH₃CN molecules, without invoking intersystem crossings between electronic states with different multiplicities. The reaction Zr(³F) + CH₃F evolves to the radical products ZrF· + ·CH₃. This radical asymptote is degenerate to that emerging from the singlet channel of the reactants Zr(¹D) + CH₃F because they both exhibit the same electronic configuration in the metal fragment. Hence, the caged radicals obtained under cryogenic‐matrix conditions can recombine through triplet and singlet paths. The recombination of the radical species along the low‐multiplicity channel produces the inserted structures H₃C? Zr? F and H₂C?ZrHF experimentally detected. For the Zr(³F) + CH₃CN reaction, a similar two‐step reaction scheme involving the radical fragments ZrNC· + ·CH₃ explains the presence of the singlet complexes H₃C? Zr? NC and H₂C?Zr(H)NC revealed in the IR‐matrix spectra upon UV irradiation. © 2014 Wiley Periodicals, Inc.     

纳米孔缺陷导致单层黑磷电荷局域极大抑制非辐射电子-空穴复合的时域模拟

通常认为缺陷加速黑磷的非辐射电子-空穴复合,阻碍器件性能的持续提高。实验打破了这一认识。采用含时密度泛函理论结合非绝热分子动力学,我们发现P-P伸缩振动驱动非辐射电子-空穴复合,使纳米孔修饰的单层黑磷的激发态寿命比完美体系延长了约5.5倍。这主要归因于三个因素。一,纳米孔结构不但没有在禁带中引入深能级缺陷,而且由于价带顶下移使带隙增加了0.22 eV。二,除了带隙增加,纳米孔减小了电子和空穴波函数重叠,并抑制了原子核热运动,从而使非绝热耦合降低至完美体系的约1/2。三,退相干时间比完美体系延长了1.5倍。前两个因素战胜了第三个因素,使纳米孔结构激发态寿命延长至2.74 ns,而其在完美体系中约为480 ps。我们的研究表明可以制造合理数量和形貌的缺陷,如纳米孔,降低黑磷非辐射电子-空穴复合,提高光电器件效率。这一研究对于理解和调控黑磷和其它二维材料的激发态性质有重要意义。