两种测试高温超导薄膜微波表面电阻方法的讨论

介绍两种工作在12GHz附近的高温超导薄膜微波表面电阻Rs测试系统,并分析各自的特点.同时简介电子科技大学在提高Rs测试精度上所作的一些改进.     

欧姆接触中接触电阻率的计算

从欧姆接触电阻率的定义出发,先从理论上介绍了热离子发射、热离子场发射和场发射三种不同情况下欧姆接触电阻率的计算公式,然后详细地从实验上综合各种测试方法,并讨论了其利弊．     

343 nm飞秒激光制备微孔阵列以增强聚氨酯合成革透湿性

为了提高聚氨酯(PU)合成革透湿性,分别使用343 nm飞秒激光和作为对比的1030 nm飞秒激光及1064 nm纳秒激光制备微孔阵列。采用扫描电镜(SEM)和3D激光扫描显微镜对比研究了微孔形貌。结果表明,343 nm飞秒激光可以制备出效果最佳的微孔。此外,分析了3种激光与PU涂层的作用机理,揭示了343 nm飞秒激光合成革微钻孔过程仅表现为光化学烧蚀,光化学和光热烧蚀同时发生于1030 nm飞秒激光钻孔过程,而1064 nm纳秒激光只显示了光热烧蚀。激光合成革表面钻孔后,测量其透湿性和抗张力。结果显示: 微孔密度越大,皮革透湿性(WVP)越大而抗张力越低,脉冲重叠的增加会导致WVP的增加和抗张力的下降;同时,随着脉冲重叠从91.7%降到50%,微孔直径从45 μm降低到30 μm,而微孔锥度从0.7°增加到12.1°;当脉冲重叠率为91.7%,微孔密度为2550/cm²时,最大的WVP增长率为306%。     

Microfabrication of stacks of acoustic matching layers for 15 MHz ultrasonic transducers

This paper presents a novel method used to manufacture stacks of multiple matching layers for 15 MHz piezoelectric ultrasonic transducers, using fabrication technology derived from the MEMS industry. The acoustic matching layers were made on a silicon wafer substrate using micromachining techniques, i.e., lithography and etch, to design silicon and polymer layers with the desired acoustic properties. Two matching layer configurations were tested: a double layer structure consisting of a silicon–polymer composite and polymer and a triple layer structure consisting of silicon, composite, and polymer. The composite is a biphase material of silicon and polymer in 2-2 connectivity. The matching layers were manufactured by anisotropic wet etch of a (1 1 0)-oriented Silicon-on-Insulator wafer. The wafer was etched by KOH 40 wt%, to form 83 μm deep and 4.5 mm long trenches that were subsequently filled with Spurr’s epoxy, which has acoustic impedance 2.4 MRayl. This resulted in a stack of three layers: The silicon substrate, a silicon–polymer composite intermediate layer, and a polymer layer on the top. The stacks were bonded to PZT disks to form acoustic transducers and the acoustic performance of the fabricated transducers was tested in a pulse-echo setup, where center frequency, −6 dB relative bandwidth and insertion loss were measured. The transducer with two matching layers was measured to have a relative bandwidth of 70%, two-way insertion loss 18.4 dB and pulse length 196 ns. The transducers with three matching layers had fractional bandwidths from 90% to 93%, two-way insertion loss ranging from 18.3 to 25.4 dB, and pulse lengths 326 and 446 ns. The long pulse lengths of the transducers with three matching layers were attributed to ripple in the passband.     

一种用于高功率微波合成的X波段双色板

在数值模拟的基础上,设计了一种用于高功率微波合成的X波段同频带双色板。微波斜45°入射时,该双色板在9 GHz到9.3 GHz内反射效率大于99%,在9.7 GHz到10 GHz内传输效率大于99%,可以用于实现两路高功率微波的同极化合成。利用电磁场全波分析软件,建立了双色板数值模型,分析了该双色板的场增强因子和功率容量问题。     

谐振式集成光学陀螺解调特性分析

基于激光器频率谱检测技术,沿着光的传输方向分析了光波在谐振式集成光学陀螺系统中的传播,结合输入信号特征,建立频域内的数学模型,通过数值仿真和实验得到了调频检测系统下的解调曲线。按照光的传输方向：激光器、声光晶体移频器、光波导环形谐振器、探测器,利用贝塞尔函数展开和光场耦合模理论分析了谐振式集成光学陀螺解调特性,及其调频调制检测系统解调输出信号与谐振频率偏差之间的关系。通过数值计算,分析了解调曲线的变化规律,得到了施加在激光器压电陶瓷驱动器上调制波形的最佳调制系数。在实验上搭建了激光器频率调制解调技术系统,得到了解调曲线。数值仿真和实验结果表明,当调制系数M=2时,线性工作区间斜率最大,解调曲线最好。实测形状与理论分析结果相符,从解调信号得到±2×10³ rad/s的陀螺动态范围。     

Effect of pressure on the performance of plasma synthetic jet actuator

The effects of the ambient air pressure level on the performance of plasma synthetic jet actuator have been investigated through electrical and optical diagnostics.Pressures from 1 atm down to 0.1 atm were tested with a 10 Hz excitation.The discharge measurement demonstrates that there is a voltage range to make the actuator work reliably.Higher pressure level needs a higher breakdown voltage,and a higher discharge current and energy deposition are produced.But when the actuator works with the maximum breakdown voltage,the fraction of the initial capacitor energy delivered to the arc is almost invariable.This preliminary study also confirms the effectiveness of the plasma synthetic jet at low pressure.Indeed,the maximum velocities of the precursor shock and the plasma jet induced by the actuator with maximum breakdown voltage are independent of the ambient pressure level;reach about 530 and 460 m/s respectively.The mass flux of the plasma jet increases with ambient pressure increasing,but the strength of the precursor shock presents a local maximum at 0.6 atm.     

CCD对高空间分辨率波前干涉检测的影响

推导并用实验验证了光强与入射波前在单位像元面积里成近似线性关系,从而得到入射波前经CCD采样后的功率谱密度（PSD）公式.根据该公式,模拟分析了影响CCD采集系统的系统传递函数的各个因素：入射波前、CCD的填充因子及CCD的曝光时间,得出了他们与系统传递函数的定性关系,并且通过实验明确CCD曝光时间对高空间分辨率波前检测不确定度的影响,为高空间分辨率干涉设计提供了理论依据.     

强磁场对金属离子掺杂CaTiO_3结构和光学性能的影响

研究了800℃条件下不同制备磁场强度(最高12 T)对Ca Ti O3及其浸渍掺杂样品在结构和光学性能方面的影响.研究表明:样品吸光性能随浸渍掺杂的离子浓度的增大而提升,且发生红移现象;相同掺杂浓度下,磁场下制备样品的吸光性能均较非磁场下制备的样品有所提高,但不同磁场强度下所制备样品的吸光曲线彼此差异不大;此外,磁制备纯Ca Ti O3晶体粉末的X-射线衍射曲线峰左移,紫外-可见漫反射光谱吸收截止波长增长,这表明强磁场可使Ca Ti O3晶面间距和晶格常数增大、禁带宽度减小.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.